阴极发光光谱法表征GaN外延缺陷

Proceedings Pub Date : 2023-11-12 DOI:10.31399/asm.cp.istfa2023p0463

Marc Fouchier, Christian Monachon, Matthew Davies

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引用次数: 0

摘要

摘要:本文综述了阴极发光光谱在gan基高电子迁移率晶体管(hemt)制造过程中监测几个关键性能指标的能力。特别是，在108-109 cm-2范围内提供了高通量螺纹位错(TD)密度测量，以及位错类型识别能力。除了这些应用之外，还介绍了其他相关主题，例如埋置AlGaN层的组成和通常关闭器件的Mg掺杂剂浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy

Abstract This work reviews the capabilities of cathodoluminescence spectroscopy to monitor several key performance indicators in GaN-based High Electron Mobility Transistors (HEMTs) manufacturing. In particular, high throughput threading dislocation (TD) density measurements in the 108-109 cm-2 range are presented, together with dislocation type discrimination capabilities. Beyond these applications, other relevant topics such as buried AlGaN layers composition and Mg dopant concentration for normally off devices are introduced.

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审稿时长

11 weeks