光束减速在提高物理失效分析SEM图像质量中的应用

Robert Scott, Tim Schnutenhaus, Andres Torres, Nathan McEwen, Kah Chin Cheong, Christopher Penley
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引用次数: 0

摘要

随着技术节点的不断缩小,扫描电子显微镜(SEM)对晶体管的检测和电学表征变得越来越困难。对于早期的后端线(BEOL)特征,如金属和通孔层,传统上成像为3-5 keV,尤其如此。在这些层中,这种能量可能会导致光束污染,特别是在晶体管探测时,会引起电气方面的复杂问题。这种电数据是必要的,以表征细微的缺陷在前端线(FEOL)。因此,为检查这些层而实施的光束减速提供了低着陆能量和更高图像质量的有用组合。这种技术被证明有助于保持在下面的后续层上的任何缺陷的电表征能力。这提高了物理故障分析(pFA)工作流程的质量,当在早期BEOL层实施时,通过提供更高质量的图像以及保留晶体管的电气特性来进行细微的FEOL缺陷表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis
Abstract As technology nodes continue to shrink, Scanning Electron Microscopy (SEM) inspection and electrical characterization of transistors has increased in difficultly. This is particularly true with early back end-of-line (BEOL) features like metal and via layers which are traditionally imaged at 3-5 keV. At these layers, this energy is capable of beam contamination, introducing electrical complications particularly with transistor probing. This electrical data is necessary to characterize subtle defects at front end-of-line (FEOL). Thus, the implementation of beam deceleration for the inspection of these layers provides a useful combination of low landing energy and higher image quality. This technique proves to aid in preserving the ability to electrically characterize any defect at the subsequent layers beneath. This increases the quality of the Physical Failure Analysis (pFA) workflow when implemented at early BEOL layers by providing higher quality images as well as preserving the electrical properties of the transistors for subtle FEOL defect characterization.
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