原位正交透射电镜片层转换捕捉微处理器器件中三维晶体管的细微缺陷

Dionaldo Zudhistira, Ho Mun-Yee, Vinod Narang
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引用次数: 0

摘要

当今半导体器件的小型化和晶体管结构的复杂性的增加导致了缺陷尺寸的逐渐缩小。这样做的一个直接后果是在透射电子显微镜(TEM)中发现初始薄片缺陷的机会减少,这促使需要转换TEM薄片以从不同的角度分析它们。在这项工作中,详细介绍了一种可靠的逐步进行原位透射电镜片层转换的程序。该方法在20nm以下缺陷FinFET样品上的适用性得到了成功验证。两种不同的初始薄片类型-平面和横截面-在案例研究中展示了该方法的多功能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices
Abstract Miniaturization of today’s semiconductor devices and increased complexity of transistor architecture have resulted in gradually shrinking defect sizes. A direct consequence to this is the diminished chance of catching defects in the Transmission Electron Microscope (TEM) on the initial lamella, prompting the need to convert the TEM lamellas to analyze them from a different angle. In this work, a reliable step-by-step procedure to perform in-situ TEM lamella conversion is detailed. The applicability of the method is successfully validated on defective sub-20nm FinFET samples. Two different initial lamella types –planar and cross-sectional – are featured in the case studies to demonstrate the method’s versatility.
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