Backside Analysis Strategy to Identify a Package Related Failure Mode at an Automotive Magnetic Sensor Device

M. Simon-Najasek, F. Naumann, S. Huebner, M. Lejoyeux, F. Altmann, A. Lindner
{"title":"Backside Analysis Strategy to Identify a Package Related Failure Mode at an Automotive Magnetic Sensor Device","authors":"M. Simon-Najasek, F. Naumann, S. Huebner, M. Lejoyeux, F. Altmann, A. Lindner","doi":"10.31399/asm.cp.istfa2023p0109","DOIUrl":null,"url":null,"abstract":"Abstract This paper presents a root cause analysis case study of defective Hall-effect sensor devices. The study identified a complex failure mode caused by chip-package interaction, which has a similar signature to discharging defects such as ESDFOS. However, the study revealed that the defect was induced by local mechanical force applied to IC structures due to the presence of large irregular-shaped filler particles within the mold compound. Extensive failure analysis work was conducted to identify the failure mode, including the development of a new backside analysis strategy to preserve the mold compound during IC defect localization and screening. A combination of different failure analysis techniques was used, including CMP delayering, PFIB trenching, SEM PVC imaging, and large area FIB cross-sectioning. The study found that the mold compound of the package caused thermos-mechanical strain onto the silica filler particle due to epoxy shrinkage during the molding process. Additionally, extra-large, irregularly shaped filler particles (called twin particles), located on top of the chip surface, can cause locally high compression stresses onto the IC layers, initiating cracks in the isolation layers under certain conditions forming a leakage path over the time. Thermo-mechanical finite element analysis was applied to verify the mechanical load condition for these large irregular-shaped filler particles. As a result, an additional polyimide layer was introduced onto the IC to mitigate the mechanical stress of mold compound particles to avoid this failure mode.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2023p0109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Abstract This paper presents a root cause analysis case study of defective Hall-effect sensor devices. The study identified a complex failure mode caused by chip-package interaction, which has a similar signature to discharging defects such as ESDFOS. However, the study revealed that the defect was induced by local mechanical force applied to IC structures due to the presence of large irregular-shaped filler particles within the mold compound. Extensive failure analysis work was conducted to identify the failure mode, including the development of a new backside analysis strategy to preserve the mold compound during IC defect localization and screening. A combination of different failure analysis techniques was used, including CMP delayering, PFIB trenching, SEM PVC imaging, and large area FIB cross-sectioning. The study found that the mold compound of the package caused thermos-mechanical strain onto the silica filler particle due to epoxy shrinkage during the molding process. Additionally, extra-large, irregularly shaped filler particles (called twin particles), located on top of the chip surface, can cause locally high compression stresses onto the IC layers, initiating cracks in the isolation layers under certain conditions forming a leakage path over the time. Thermo-mechanical finite element analysis was applied to verify the mechanical load condition for these large irregular-shaped filler particles. As a result, an additional polyimide layer was introduced onto the IC to mitigate the mechanical stress of mold compound particles to avoid this failure mode.
汽车磁传感器器件封装相关失效模式的背面分析策略
摘要本文介绍了霍尔效应传感器器件缺陷的根本原因分析案例。该研究确定了由芯片封装相互作用引起的复杂失效模式,该模式与放电缺陷(如ESDFOS)具有相似的特征。然而,研究表明,由于模具化合物中存在大量不规则形状的填充颗粒,因此局部机械力作用于IC结构引起了缺陷。进行了大量的失效分析工作,以确定失效模式,包括开发新的背面分析策略,以在IC缺陷定位和筛选期间保持模具化合物。使用了不同的失效分析技术组合,包括CMP脱层,PFIB挖沟,SEM PVC成像和大面积FIB横截面。研究发现,在成型过程中,由于环氧树脂收缩,包装的模具化合物对二氧化硅填料颗粒产生热机械应变。此外,位于芯片表面顶部的超大,不规则形状的填充颗粒(称为双颗粒)可能会对IC层造成局部高压缩应力,在某些条件下在隔离层中引发裂缝,随着时间的推移形成泄漏路径。采用热-力学有限元分析验证了这些大型异形填料颗粒的力学载荷条件。因此,在集成电路上引入了额外的聚酰亚胺层,以减轻模具复合颗粒的机械应力,从而避免这种失效模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
1
审稿时长
11 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信