Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.最新文献_第3页

Research on wafer scale bonding method based on gold-tin eutectic solders [MEMS packaging] 基于金-锡共晶焊料的晶圆级键合方法研究[MEMS封装]

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298722

Sihai Chen, Mingxiang Chen, X. Yi, Honghai Zhang, Sheng Liu

引用次数: 2

The formation and growth of intermetallic compounds between Sn-3.5Ag lead-free solder and Cu substrate Sn-3.5Ag无铅焊料与Cu衬底间金属间化合物的形成与生长

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298751

Yu Daquan, Duan Li-lei, Zhao Jie, Wang Lai

{"title":"The formation and growth of intermetallic compounds between Sn-3.5Ag lead-free solder and Cu substrate","authors":"Yu Daquan, Duan Li-lei, Zhao Jie, Wang Lai","doi":"10.1109/EPTC.2003.1298751","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298751","url":null,"abstract":"A new method was used to investigate the formation and growth of intermetallic compound (IMC hereafter) formed at the interface between Sn-3.5Ag lead free solder and the Cu substrate. Solder joints were prepared by Memisco (wetting balance, model ST50) at 250/spl deg/C with soldering time of 10sec, 30sec, 60sec and 90sec. Experimental data for IMC growth between copper and Sn-3.5Ag solder during soldering exhibit a t/sup 1/3/ dependence on time. The results indicate that during soldering up to 90 sec, grain boundary diffusion is the predominant mechanism for transport through the layer. During aging at 170/spl deg/C up to 1000h, the columnar morphology of IMCs changed to a more planer type. The growth behavior of IMC layers obeys t/sup 1/2/ equation /spl Delta/y/sub i/ (t) = k/sub i/t/sup 1/2/. Here, /spl Delta/y/sub i/ is the growth thickness of IMC during aging; k/sub i/ is the coefficient standing for the square root of the diffusivity at the aging temperature and t is the aging time. This equation reveals a diffusion-controlled mechanism during aging.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114258925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

RF SiP technology innovation through integration 通过集成创新射频SiP技术

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298786

Jianhua Wu, M. J. Anderson, D. Coller, G. Guth

引用次数: 8

Computer aided reliability assessment 计算机辅助可靠性评估

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298689

Ji Wu, M. Pecht, Jiaji Wang

引用次数: 2

Reliability analysis in IC package 集成电路封装可靠性分析

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298781

Ping He, Yaowei Pengi, Jing Gu, Jun Wang, Hongkun Yu, Jinfeng Ni, Ziyong Qian, Jiaji Wang

引用次数: 0

Finite element analysis of hygro-thermal induced failure in plastic packages 塑料包装热湿破坏的有限元分析

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298765

N. Sun, D. Lin, Daoguo Yang

引用次数: 2

Thermal-mechanical stress and fatigue failure analysis of a PBGA PBGA的热机械应力和疲劳失效分析

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298776

Xiuyun Hao, L. Qin, Daoguo Yang, Shi-Lun Liu

引用次数: 12

Highly accelerated stress test (HAST) for low-cost flip chip on board technology 低成本倒装芯片板载技术的高加速应力测试(HAST)

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298766

Jianzhong Wei, Qunyong Wang, Wenzhang Luo, Guo-Wei Xiao, P. Chan

引用次数: 0

Fabrication of SiC preform for SiC/Al composite in electronic packaging 电子封装用SiC/Al复合材料SiC预制体的制备

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298740

Qiang Huang, Guohua Zhang, Rongzhen Ding, Daqi Guo, M. Gu

{"title":"Fabrication of SiC preform for SiC/Al composite in electronic packaging","authors":"Qiang Huang, Guohua Zhang, Rongzhen Ding, Daqi Guo, M. Gu","doi":"10.1109/EPTC.2003.1298740","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298740","url":null,"abstract":"The relationship between blend ratio (the volume fraction of larger particle size) and rheological properties of concentrated suspensions is of great importance since it is the key to obtain high solid suspensions. The rheological properties of bidisperse aqueous suspensions made of two SiC powders with different particle size (d/sub (0.5)/=1.63 /spl mu/m and 18.43 /spl mu/m, respectively) has been studied as a function of blend ratio. The results showed that the value of critical blend ratio, at which the viscosity is minimized, is in close relation to the shear rate applied. At shear rates below 10 S/sup -1/, the critical /spl xi/ was greater than 70%, but at shear rates from 10 S/sup -1/ to 500 S/sup -1/, /spl xi/ turned out to be 50%. The change of shear region from shear-thinning behavior to shear-thickening behavior may be used to account for the variation of critical /spl xi/. Dynamic oscillatory tests showed that the increment of blend ratio /spl xi/ leads to the change of suspension from nearly an elastic response to a liquid like one. It was also found that the addition of solidum metasilicate increased the strength of the SiC preform and the preform can be demolded without permanent deformation.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131304576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lasers in electronics packaging 电子封装中的激光器

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298716

Y. Sun, E. Swenson

引用次数: 3