Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.最新文献_第2页

Characteristics of interfacial microstructure of PBGA solder bump during multi-reflow and aging processes PBGA钎料凸点在多次回流和时效过程中的界面微观结构特征

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298736

Yanhong Tian, Chunqing Wang, J. Gong

{"title":"Characteristics of interfacial microstructure of PBGA solder bump during multi-reflow and aging processes","authors":"Yanhong Tian, Chunqing Wang, J. Gong","doi":"10.1109/EPTC.2003.1298736","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298736","url":null,"abstract":"Characteristics of intermetallic compounds at the interface of PBGA solder ball and Au/Ni/Cu metallization on BT substrate during multi-reflow and aging processes was presented. The eutectic SnPb solder bump was formed by laser reflow first, followed by a secondary infrared reflow process to form solder joint, and then the solder joint was aged at 160/spl deg/C for various numbers of days; finally, the aged solder joint was reflowed once again. During first laser reflow, the morphology and distribution of AuSn/sub 4/ IMC were strongly dependent on the laser reflow power and heating time applied, and both changed after the secondary infrared reflow process. The AuSn/sub 4/ layer formed at the interface in the first laser reflow process dissolved partially after the secondary infrared reflow process, and AuSn/sub 4/ particles precipitated out at the eutectic cell boundary of the solder. After the aging process, AuSn/sub 4/ IMC converted into Au-Ni-Sn ternary compounds, and a continuous Ni/sub 3/Sn/sub 4/ layer grew out under the Au-Ni-Sn IMC layer. The thickness of Au-Ni-Sn and the Ni/sub 3/Sn/sub 4/ IMC layer increased as the aging time increased. When the aged solder joint was reflowed again, the Au-Ni-Sn IMC disappeared at the interface, and continuous Ni/sub 3/Sn/sub 4/ IMC transformed to scallop-type morphology.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132273005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Effect of the texture of indium on its mechanical properties 铟的织构对其力学性能的影响

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298738

Yudong Liu, Guohai Chen, Qianqian Li, Jusheng Ma

引用次数: 1

Investigation on moisture diffusion in COB packaging [chip on board] COB封装[板载芯片]中水分扩散的研究

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298768

Weidong Huang, Xuhong Wang, Li Wang, M. Sheng, Liqiang Xu, F. Stubhan, L. Luo

引用次数: 0

Stress analysis of spacer paste replacing dummy die in a stacked CSP package 叠层CSP封装中间隔膏替代虚模的应力分析

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298697

J. Zhang, J. Huneke

引用次数: 8

Reliability research on the thermal deformation and thermal stress of the metal packaging with low resistance and high electric current 低电阻大电流金属封装热变形与热应力可靠性研究

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298770

R. Bai, Songliang Jia, X. Sun, B. Deng, Xide Li, Leang Lin, Z. Zhuang, Yu Yang, Shuidi Wang, Zhonghui Zhang

{"title":"Reliability research on the thermal deformation and thermal stress of the metal packaging with low resistance and high electric current","authors":"R. Bai, Songliang Jia, X. Sun, B. Deng, Xide Li, Leang Lin, Z. Zhuang, Yu Yang, Shuidi Wang, Zhonghui Zhang","doi":"10.1109/EPTC.2003.1298770","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298770","url":null,"abstract":"Thermal deformations and stresses of packaging structures were investigated by both experimental and numerical methods. Laser speckle interferometry was used as the experimental method to test the coefficient of thermal expansion (CTE) of the metal composite leads and the thermal deformations of the entire packaging structures due to the change of temperature from room-temperature to 150/spl deg/C. ABAQUS/standard finite element (FE) code was used to simulate the thermal deformations and stresses from room-temperature to 150/spl deg/C for the-packaging structures. The results of numerical simulations were in good agreement with those of experiments. It showed that the predicted thermal stresses and deformations in the working condition were qualitatively reliable. Moreover, the technique of element deactivation and activation was used in the FE analysis to simulate the manufacturing process of the packaging structures cooled from 779/spl deg/C to room-temperature. The residual thermal deformations and stresses during the process were obtained.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121993359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unique new packaging of semiconductor packaging technology high performation by encapsulation epoxy resin and VPES (vacuum printing encapsulation systems) 独特的新型封装半导体封装技术，采用高性能的封装环氧树脂和VPES(真空印刷封装系统)

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298733

A. Okuno

引用次数: 1

Highlights of the 2002 national electronic manufacturing technology roadmaps and their applicability to China 2002年国家电子制造技术路线图的亮点及其在中国的适用性

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298687

R. Pfahl

引用次数: 0

A ceramic pin grid array package with 370 I/O leads 具有370个I/O引线的陶瓷引脚网格阵列封装

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298704

J. Chunfeng, Fu Hualiang, Zheng Hongyu, Li Qiaoming

引用次数: 0

Emerging technologies; impetus for future high technology growth 新兴技术;未来高科技发展的动力

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298685

C. E. Bauer

引用次数: 6

Experimental research on a coupling shock absorber for reinforcement of electronic-packaging component or MEMS 用于电子封装元件或MEMS加固的耦合减振器的实验研究

Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003. Pub Date : 1900-01-01 DOI: 10.1109/EPTC.2003.1298739

Y. Ping

引用次数: 1