Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.最新文献

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A preliminary research on the dehumidify technology of BGA BGA除湿技术的初步研究
Zhao Zhi-ping
{"title":"A preliminary research on the dehumidify technology of BGA","authors":"Zhao Zhi-ping","doi":"10.1109/EPTC.2003.1298758","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298758","url":null,"abstract":"A BGA is very susceptible to humidity and it should be used within eight hours of unpacking, but this is almost impossible in practical production. After carrying out a pre-dealing experiment on humidified BGAs, we come to the conclusion that a BGA which has been unpacked and remained in the air for more than eight hours must be dehumidified by means of being baked for 40 hours at a temperature of 125/spl deg/C in an oven.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"7963 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Warpage-based optimization of the curing profile for electronic packaging polymers 基于翘曲的电子封装聚合物固化轮廓优化
D.G. Yang, K. Jansen, Q. Li, J. Liang, L. Ernst, G.Q. Zhang
{"title":"Warpage-based optimization of the curing profile for electronic packaging polymers","authors":"D.G. Yang, K. Jansen, Q. Li, J. Liang, L. Ernst, G.Q. Zhang","doi":"10.1109/EPTC.2003.1298757","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298757","url":null,"abstract":"Process-induced warpage may cause serious problems for the electronic packages. In this paper, a practical methodology is developed to predict the warpage caused by the curing process of the thermosetting polymer and the subsequent cooling down phase, and an optimization method is proposed to minimum the warpage. A cure-dependent viscoelastic constitutive model is applied to describe the behavior evolution during the curing process. The cure-dependent parameters were characterized using a combinational approach of DMA and DSC measurements. Cure shrinkage was characterized with density measurement and is applied to epoxy as an initial strain for each time increment. With the simulation-based optimization procedure, an optimal curing profile could be obtained to minimise the process-induced warpage.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129108855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study on a novel optical fiber pressure sensor 新型光纤压力传感器的研究
G. Wang, Yiton Fu, M. Welland, H. Hodson, Jusheng Ma
{"title":"Study on a novel optical fiber pressure sensor","authors":"G. Wang, Yiton Fu, M. Welland, H. Hodson, Jusheng Ma","doi":"10.1109/EPTC.2003.1298724","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298724","url":null,"abstract":"A novel kind of micromachined fiber-optic pressure sensor is developed. This paper describes our progress in the development of the novel, MEMS based, high-sensitivity, high-resolution, high-temperature and fast-response optical fiber pressure sensor for pressure measurement in unsteady and turbulent flow fields system. The development process includes design, simulation, fabrication and package of the sensor is demonstrated The pressure sensor is fabricated by deep reactive ion etching (RIE) technology. The finished device has a sensing element with a size of 100 /spl mu/m in diameter. It has been expected - through ANSYS simulation, to show good sensitivity, wide measuring scale, as well as high frequency response. The fiber optic pressure sensor measurement system is based upon the interferometric response of an extrinsic cavity formed between the interrogation fiber and a reflective silicon diaphragm. We discussed the design trade offs, optical interrogation and temperature sensitivity of such a configuration, and demonstrate the success of the design in small-scale shock tube experiments. We then describe the application of the sensor in a full-scale turbine test facility in which pressure signals with frequency components exceeding 50 kHz were obtained.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132881842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rapid developmenting of electronic packaging industry of China 中国电子封装行业的快速发展
Bi Keyun
{"title":"Rapid developmenting of electronic packaging industry of China","authors":"Bi Keyun","doi":"10.1109/EPTC.2003.1298682","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298682","url":null,"abstract":"","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132909852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contact resistance of anisotropically conductive interconnection 各向异性导电互连的接触电阻
J. Maattanen
{"title":"Contact resistance of anisotropically conductive interconnection","authors":"J. Maattanen","doi":"10.1109/EPTC.2003.1298783","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298783","url":null,"abstract":"Anisotropically conductive adhesives (ACA) are becoming more and more popular in electronic device high density interconnections. The main application areas for ACA are in the attachment of flip chip on glass (COG), flip chip on flex (COF) and TCP (tape carrier package)-flex on displays. The understanding of the conduction mechanisms for anisotropically conductive adhesives is of vital importance when choosing the right adhesive for a specific application. In the conductivity model, a formula has been created that can be used to estimate how the degree of deformation of the particles affects the resistance, especially in the case of soft metal-coated polymer particles. Since the particle resistance is only a part of the total contact resistance, the model has to take into account the interface resistances between the different materials. Using this model, it is possible to calculate an estimate of the total contact resistance. Some comparisons are made with real measurements to verify the model.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122933017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The effect of chemical species in the lead frame materials on the interface microstructure between copper alloys and SnPb solder 引线框架材料中化学物质对铜合金与SnPb钎料界面微观组织的影响
Huang Fuxiang, S.G. Hirowo, L. Xiaoyan, M. Ju-sheng
{"title":"The effect of chemical species in the lead frame materials on the interface microstructure between copper alloys and SnPb solder","authors":"Huang Fuxiang, S.G. Hirowo, L. Xiaoyan, M. Ju-sheng","doi":"10.1109/EPTC.2003.1298777","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298777","url":null,"abstract":"The effect of chemical species in the leadframe materials on the interface microstructure between copper alloy and SnPb solder was studied by an optical microscope and scanning electron microscope (SEM) equipped with energy dispersive X-ray spectroscopy. The result showed that after aging at 160/spl deg/C for 300h, the intermetallic compound (IMC) at the interface between CuCrZr system, CuNiSi alloys and SnPb solder was formed as Cu/sub 6/Sn/sub 5/, which thickness was about 5/spl sim/10/spl mu/m. The IMC between C19400 alloy and SnPb solder was Cu/sub 6/Sn/sub 5/.,, which thickness was about 60/spl sim/70/spl mu/m. Pb particle and holes were found to be in the IMC, which would be harmful for reliability. The elements of Cr and Zn in CuCrZrZn alloy become rich at the interface between Cu and IMCs, leading to the retardation of the growth of IMCs.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122937684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated hardware and software for improved flatness measurement: ATC4.1 flip chip assembly case studies 改进平面度测量的集成硬件和软件:ATC4.1倒装芯片组装案例研究
Hai Ding, Jian Zhang, R. E. Powell, I. C. Ume, D. Baldwin
{"title":"Integrated hardware and software for improved flatness measurement: ATC4.1 flip chip assembly case studies","authors":"Hai Ding, Jian Zhang, R. E. Powell, I. C. Ume, D. Baldwin","doi":"10.1109/EPTC.2003.1298714","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298714","url":null,"abstract":"Over the past four decades, electronic packaging technology has evolved from peripheral, through-hole, and bulk configurations to area-array. surface-mount, and small-profile approaches. Among these approaches, flip chip attachment has become the favorable choice for its capability of high volume of input/output and short path of signal distribution. Given the projection that the chip size and power of a single chip package will increase dramatically. substrate warpage of flip-chip packages during assembly and usage has become one of the main concerns. Warpage could cause misalignment between the chip and the substrate, prevent the solder balls from making contact with the substrate flip chip pads during the reflow soldering process, or induce crack nucleation at the board underfill interface in long-term usage. In this research, the authors developed an integrated shadow moire system for improved warpage analysis. The hardware is designed to carry out warpage measurement with a resolution on the order of microns. Combined with software, the integrated system is fully automated and highly accurate. As case studies, the system is used to characterize the substrate warpage of flip chip on organic board assemblies. Warpage of the substrates at the initial bare-board stage, post-reflow, and post-underfill are measured at room temperature. It is found that by properly selecting initially warped substrates, warpage can be diminished during the assembly processes. In addition, warpage measurements at elevated temperatures during thermal cycling and power cycling show that power cycling poses a smaller impact on substrate warpage.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115305752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solder joints design attribute to no solder bridge for fine pitch device 小间距器件的焊点设计特点是无焊点桥
L. Yu, W. Qing
{"title":"Solder joints design attribute to no solder bridge for fine pitch device","authors":"L. Yu, W. Qing","doi":"10.1109/EPTC.2003.1298695","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298695","url":null,"abstract":"Solder bridge is a serious defect of solder joints in ultra fine pitch devices assemblies, such as QFP256 (QFP: Quad Flat Packaging). It has been known that generation of the solder bridge is closely related to formation process of the solder joints. A three-dimensional model to simulate the formation process of the solder joints bridge of QFP256 is formed and numerically simulated to predict formation shape using Surface Evolver program in this paper. Based on these results, solder bridging mechanism and factors influencing the solder bridge are investigated, involves solder volume, wetting angle, pad size, lead position on the pad. The results show that there is a critical solder volume V/sub c/for the solder joints to avoid solder bridging, which can be used to evaluate anti-bridging ability of the solder joints.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127441129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Finite element stress analysis of thin die detachment process 薄模具剥离过程的有限元应力分析
A. Chong, Y. Cheung
{"title":"Finite element stress analysis of thin die detachment process","authors":"A. Chong, Y. Cheung","doi":"10.1109/EPTC.2003.1298691","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298691","url":null,"abstract":"One of the major developments in high-density electronic packaging assembly processes is the capability of handling very thin semiconductor devices. In order to achieve high production yield in the assembly processes and high reliability for the final packages, careful study on the handling method of very thin dice is therefore needed. In this article, we focus on the die detachment process of very thin dice in the die bonding process. Both 2D and 3D finite element models are built to simulate the die detachment process of a thin die, which is adhered to a plastic adhesive film. We report the stress distribution of the die when it is subjected to a displacement load by multiple push-up pins.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126621417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A study on the creep damage of epoxy molding compound in IC package IC封装中环氧成型复合材料蠕变损伤的研究
Shi-Lun Liu, L. Qin, Daoguo Yang, L. Ernst, G.Q. Zhang
{"title":"A study on the creep damage of epoxy molding compound in IC package","authors":"Shi-Lun Liu, L. Qin, Daoguo Yang, L. Ernst, G.Q. Zhang","doi":"10.1109/EPTC.2003.1298735","DOIUrl":"https://doi.org/10.1109/EPTC.2003.1298735","url":null,"abstract":"The thermo-mechanical reliability of epoxy molding compound (EMC) is a main concern for the electronic industry. In order to investigate creep-induced damage in packaging polymers, creep tests of EMC were carried out. The fracture surfaces of the specimens were analyzed by scanning electron microscopy to investigate the creep failure microcosmic mechanism. A modified Lermaitre creep damage model was used in a first attempt to describe creep damage of the EMC. The effect of multiaxial stress state was considered by the triaxial parameter R/sub v/. Finally, an FEM model of a QFP package was set up, and the creep damage model was used to analyze the creep damage of the EMC in the IC package. The results show that the EMC creep behavior can be characterized as primary, secondary, and tertiary creep, and volume damage is done before the cracks propagate by void coalescence which involves further ductile matrix deformation (micro-banding), and this mechanism leads to a rough zone of sub-critical crack growth. The creep lifetime obtained by the creep damage model agrees with the experimental results well at relatively low stress levels, but at higher stress levels, it does not do well.","PeriodicalId":201404,"journal":{"name":"Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123172715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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