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Measuring the Effect of Scatter on the Performance of a Lithography System 测量散射对光刻系统性能的影响
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-24 DOI: 10.1364/eul.1996.eie203
B. L. Fontaine, T. Daly, H. Chapman, D. Gaines, D. Stearns, D. Sweeney, D. Kania
{"title":"Measuring the Effect of Scatter on the Performance of a Lithography System","authors":"B. L. Fontaine, T. Daly, H. Chapman, D. Gaines, D. Stearns, D. Sweeney, D. Kania","doi":"10.1364/eul.1996.eie203","DOIUrl":"https://doi.org/10.1364/eul.1996.eie203","url":null,"abstract":"The distribution of scattered light at the image plane of an extreme ultraviolet lithography (EUVL) system was measured, in situ. These measurements revealed a significant degradation of the modulation transfer function of the imaging optic, relative to its value in the absence of scattering.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127256945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
EUVL Reticle Factory Model and Reticle Cost Analysis EUVL标枪工厂模型与标枪成本分析
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-22 DOI: 10.1364/eul.1996.r54
A. Hawryluk, G. Shelden, P. Troccolo
{"title":"EUVL Reticle Factory Model and Reticle Cost Analysis","authors":"A. Hawryluk, G. Shelden, P. Troccolo","doi":"10.1364/eul.1996.r54","DOIUrl":"https://doi.org/10.1364/eul.1996.r54","url":null,"abstract":"The key issues in reticle manufacturing are cost and delivery time,\u0000 both of which are dependent upon the yield of the process line. To\u0000 estimate the cost and delivery time for EUVL reticles in commercial\u0000 manufacturing, we have developed the first model for an EUV reticle\u0000 factory which includes all the tools required for a presumed EUVL\u0000 reticle fabrication process. This model includes the building, support\u0000 tools and sufficient “in-line” process tools for the manufacture of\u0000 (more than) 2500 reticles per year. Industry specifications for the\u0000 tool performance are used to determine the number of tools required\u0000 per process step and the average number of reticles fabricated per\u0000 year. Building and capital equipment depreciation costs, tool\u0000 installation costs, tool maintenance costs, labor, clean room costs,\u0000 process times and process yields are estimated and used to calculate\u0000 the yearly operating cost of the reticle factory and the average\u0000 reticle fabrication cost. We estimate the sales price of an EUV\u0000 reticle to be $60K for non-critical levels and $120K for\u0000 “leading-edge. The average reticle fabrication time is calculated for\u0000 three different process-line yields.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130568518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ring-Field EUVL Camera with Large Etendu 大视场环场EUVL相机
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1995-12-31 DOI: 10.1364/eul.1996.osd178
W. Sweatt
{"title":"Ring-Field EUVL Camera with Large Etendu","authors":"W. Sweatt","doi":"10.1364/eul.1996.osd178","DOIUrl":"https://doi.org/10.1364/eul.1996.osd178","url":null,"abstract":"These scanning cameras with large instantaneous fields make efficient use of the new, 300-μm diameter, debris-less laser-plasma sources while printing 100-nm features.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117047452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 3-D Numerical Study of Pinhole Diffraction to Predict the Accuracy of EUV Point Diffraction Interferometry 利用针孔衍射的三维数值研究预测EUV点衍射干涉测量的精度
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1995-12-01 DOI: 10.1364/eul.1996.om133
K. Goldberg, E. Tejnil, J. Bokor
{"title":"A 3-D Numerical Study of Pinhole Diffraction to Predict the Accuracy of EUV Point Diffraction Interferometry","authors":"K. Goldberg, E. Tejnil, J. Bokor","doi":"10.1364/eul.1996.om133","DOIUrl":"https://doi.org/10.1364/eul.1996.om133","url":null,"abstract":"A three-dimensional (3-D) electromagnetic field simulation is used to model the propagation of extreme ultraviolet (EUV), 13 nm wavelength, light through sub-1500 Å diameter pinholes in a highly absorptive medium. Deviations of the diffracted wavefront phase from an ideal sphere are studied within 0.1 numerical aperture, to predict the accuracy of EUV point diffraction interferometers used in at-wavelength testing of nearly diffraction-limited EUV optical systems. Aberration magnitudes are studied for various 3-D pinhole models, including cylindrical and conical pinhole bores.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"341 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121691625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Surface Imaging Resists: Promises, Practices and Prospects 表面成像抗蚀剂:承诺、实践和前景
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.r28
M. Hanratty
{"title":"Surface Imaging Resists: Promises, Practices and Prospects","authors":"M. Hanratty","doi":"10.1364/eul.1996.r28","DOIUrl":"https://doi.org/10.1364/eul.1996.r28","url":null,"abstract":"Surface imaging technology has the potential of providing enhanced\u0000 resolution, larger process latitude and extending the capabilities of\u0000 optical lithography tools. Surface imaging resist (SIR) processing in\u0000 the form of the DESIRE process has been used at Texas Instruments for\u0000 some time. Originally developed for g-line exposure tools (436 nm), it\u0000 is now being used to push the capabilities of a 248 nm DUV stepper. In\u0000 this paper the advantages of SIR are reviewed, the current practices\u0000 described, and prospects for the future applications discussed.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127449711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Specifications and Metrology of Surface Figure and Finish for Microlithography Optics 光学微光刻表面图形和光洁度的规范和计量
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.of94
F. Zernike
{"title":"Specifications and Metrology of Surface Figure and Finish for Microlithography Optics","authors":"F. Zernike","doi":"10.1364/eul.1996.of94","DOIUrl":"https://doi.org/10.1364/eul.1996.of94","url":null,"abstract":"Optical microlithography continues to move to smaller feature sizes. The system requirements are very high, and this stresses the fabrication and the assembly of the components and the attendant metrology. Some examples from present day technology are presented and requirements for EUV systems are discussed.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132225406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Initial Experiments on Direct Aerial Image Measurements in the Extreme Ultraviolet 极紫外光下航空图像直接测量的初步实验
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.om124
C. H. Fields, W. Oldham, A. Ray-Chaudhuri, K. Krenz, R. Stulen
{"title":"Initial Experiments on Direct Aerial Image Measurements in the Extreme Ultraviolet","authors":"C. H. Fields, W. Oldham, A. Ray-Chaudhuri, K. Krenz, R. Stulen","doi":"10.1364/eul.1996.om124","DOIUrl":"https://doi.org/10.1364/eul.1996.om124","url":null,"abstract":"We report the current status of research to apply the technique of direct aerial image monitoring (AIM) to measure the performance of an Extreme Ultraviolet Lithography (EUVL) test bed. There are several issues which might limit the possibility of performing image monitoring experiments on EUVL systems. These issues include: Source flux, signal to noise ratios, and EUV scanning aperture fabrication.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132456934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical Technology for EUV Lithography EUV光刻的光学技术
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.eww9
Masaaki Ito, Souichi Katagiri, H. Yamanashi, Eiichi Seya, T. Ogawa, H. Oizumi, T. Terasawa
{"title":"Optical Technology for EUV Lithography","authors":"Masaaki Ito, Souichi Katagiri, H. Yamanashi, Eiichi Seya, T. Ogawa, H. Oizumi, T. Terasawa","doi":"10.1364/eul.1996.eww9","DOIUrl":"https://doi.org/10.1364/eul.1996.eww9","url":null,"abstract":"A high-throughput optical system that has a bouncing number of only four, including a reflective mask, was designed. The illumination system is comprised of a single tilted-ellipsoidal mirror, that is suitable for a two-aspherical-mirror ring-field imaging system. A prototype optical system was evaluated using synchrotron radiation at the Photon Factory. The experimental results combined with calculations have indicated that a throughput of 15 to 20 wafers/h can be obtained by using the optical system in combination with a compact storage ring. In addition, 0.12-μm line-and-space patterns were delineated in parts of the ring field. The use of alternating and attenuated reflective phase-shifting masks is also discussed to enhance the resolution of EUV lithography.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117081218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Debris-free EUVL sources based on gas jets 基于气体喷射的无碎片EUVL源
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.es66
G. Kubiak, L. Bernardez, K. Krenz, D. O'Connell, Robert Gutowski, A. Todd
{"title":"Debris-free EUVL sources based on gas jets","authors":"G. Kubiak, L. Bernardez, K. Krenz, D. O'Connell, Robert Gutowski, A. Todd","doi":"10.1364/eul.1996.es66","DOIUrl":"https://doi.org/10.1364/eul.1996.es66","url":null,"abstract":"Supersonic gas jets are used to produce a source of large cluster laser\u0000 plasma targets for extreme ultraviolet (EUV) generation without direct\u0000 production of debris. EUV conversion efficiency measurements at a\u0000 wavelength of 13.5 nm yield 58% of a solid gold target or\u0000 0.0026 J/eV/JL. Multilayer-coated mirrors placed in\u0000 proximity to the plasma exhibit 14% reflectance loss after the\u0000 equivalent of 1.4 × 108 pulses, an improvement by a\u0000 factor of 105× over unprotected solid target\u0000 results and 100× over solid targets with extensive debris\u0000 mitigation.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122319243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
An Advanced EUV source from water droplet laser plasma 一种先进的水滴激光等离子体极紫外光源
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.es89
F. Jin, M. Richardson, G. Shimkaveg, D. Torres
{"title":"An Advanced EUV source from water droplet laser plasma","authors":"F. Jin, M. Richardson, G. Shimkaveg, D. Torres","doi":"10.1364/eul.1996.es89","DOIUrl":"https://doi.org/10.1364/eul.1996.es89","url":null,"abstract":"We describe the operation of a laser-plasma EUV source that satisfies\u0000 all the requirements for projection lithography at 13 nm or 11.6 nm.\u0000 We demonstrate that this source, based on mass-limited water droplets\u0000 as a laser plasma target is essentially debris-free, produces\u0000 narrow-line EUV emission, is continuous in operation and is\u0000 practically cost less.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133361129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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