A. MacDowell, Z. Shen, K. Fujii, J. Bjorkholm, R. Freeman, L. Fetter, D. Taylor, D. Tennant, L. Eichner, W. Waskiewicz, D. White, D. Windt, O. Wood, S. Haney, T. Jewell
{"title":"Extreme Ultraviolet 1:1 Ring-Field Lithography Machine","authors":"A. MacDowell, Z. Shen, K. Fujii, J. Bjorkholm, R. Freeman, L. Fetter, D. Taylor, D. Tennant, L. Eichner, W. Waskiewicz, D. White, D. Windt, O. Wood, S. Haney, T. Jewell","doi":"10.1364/eul.1996.eie192","DOIUrl":"https://doi.org/10.1364/eul.1996.eie192","url":null,"abstract":"A 1X Offner Ring Field Extreme Ultraviolet lithography machine has been fabricated for use with 13.4nm radiation. Initial imaging results printed 75nm features but with low modulation. This initial work indicates that the optics suffer from a range of problems that we are trying to identify. These problems are typical of what a realistic EUV lithography machine will face.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122690835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-repetition-rate droplet target for laser-plasma EUV generation","authors":"L. Malmqvist, L. Rymell, H. Hertz","doi":"10.1364/eul.1996.es72","DOIUrl":"https://doi.org/10.1364/eul.1996.es72","url":null,"abstract":"A spatially stable liquid-droplet target system for uninterrupted, high-repetition rate and practically debris-free laser-plasma EUV generation is described. The system is based on the continuous liquid jet droplet generation method. System requirements for use in EUV lithography system are analyzed.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121517611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Tarrio, E. Spiller, C. Evans, T. Lucatorto, Charles W. Clark
{"title":"Post-polish figuring of optical surfaces using multilayer deposition","authors":"C. Tarrio, E. Spiller, C. Evans, T. Lucatorto, Charles W. Clark","doi":"10.1364/eul.1996.dfo144","DOIUrl":"https://doi.org/10.1364/eul.1996.dfo144","url":null,"abstract":"We present preliminary results of a technique that uses deposition of\u0000 variable-thickness multilayer films to correct optical figure errors.\u0000 The multilayer technique offers the potential to make figure\u0000 corrections, such as aspherizing high-quality spherical optics,\u0000 without adding measurable roughness. Moreover, because the period of a\u0000 multilayer can be measured very accurately using x-ray diffraction, we\u0000 can easily map test depositions made on inexpensive float-glass\u0000 substrates. We have used this technique to reduce large rotationally\u0000 symmetric errors by almost an order of magnitude in a single run.\u0000 Extension to the correction of non-symmetric errors was performed by\u0000 deposition through a two-dimensional mask, which was less successful.\u0000 We have identified several sources of error in this type of deposition\u0000 and discuss means of improvement. We have devised a method using a\u0000 series of rotationally-symmetric masks and a varying-rotation-rate\u0000 substrate stage to reduce the two-dimensional problem to a series of\u0000 one-dimensional problems.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117334261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reflectance coatings for the vacuum/extreme ultraviolet region","authors":"N. J. Duddles","doi":"10.1364/eul.1996.rmc173","DOIUrl":"https://doi.org/10.1364/eul.1996.rmc173","url":null,"abstract":"A theoretical examination has been undertaken to evaluate the performance of reflective coatings at normal incidence in the spectral region 40-70nm for applications in lithographic imaging systems. Aluminium based multilayer structures were found to offer the highest theoretical reflectance values in this region but due to the presence of surface oxide layers are of little practical value. Alternative multilayer structures based on silicon are offered as an alternative, were it is suggested that oxide formation may be more easily controlled.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128580821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of Extreme Ultraviolet Lithography along the European route","authors":"F. Bijkerk","doi":"10.1364/eul.1996.eww13","DOIUrl":"https://doi.org/10.1364/eul.1996.eww13","url":null,"abstract":"We survey several research themes and experimental results of an initial collaborative development programme in Europe on Extreme Ultraviolet Lithography (EUVL).","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125081836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of SAL605 Negative Resist at λ=13 nm","authors":"B. L. La Fontaine, D. Ciarlo, D. Gaines, D. Kania","doi":"10.1364/eul.1996.r39","DOIUrl":"https://doi.org/10.1364/eul.1996.r39","url":null,"abstract":"We have characterized the response of the negative resist SAL605 in the extreme ultraviolet (λ=13nm). The sensitivity was found to be ~1 mJ/cm2 for all conditions studied. We have identified processing conditions leading to high (γ>4) contrast. The resist response was modeled using Prolith/2 and the development parameters were obtained from the exposure curves.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122326501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of mass-limited ice droplet laser plasmas","authors":"D. Torres, F. Jin, M. Richardson, C. DePriest","doi":"10.1364/eul.1996.es75","DOIUrl":"https://doi.org/10.1364/eul.1996.es75","url":null,"abstract":"The ice droplet laser plasma can meet the strict cost and operation\u0000 criteria for a demonstration production-line EUV lithography system.\u0000 We have begun a systematic theoretical and experimental\u0000 characterization of the source emission, plasma dynamics and the\u0000 radiation physics, of the mass-limited ice droplet plasma. We discuss\u0000 our initial findings.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131788502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Nguyen, A. MacDowell, K. Fujii, D. Tennant, L. Fetter
{"title":"At-wavelength inspection of EUVL mask defects with a 1X Offner ring-field system","authors":"K. Nguyen, A. MacDowell, K. Fujii, D. Tennant, L. Fetter","doi":"10.1364/eul.1996.r49","DOIUrl":"https://doi.org/10.1364/eul.1996.r49","url":null,"abstract":"At-wavelength inspection of EUV masks containing programmed defects was performed with an EUV 1X Offner ring-field system. At-wavelength inspection was sensitive to thin substrate defects. The sensitivity of the detection was limited by the resolution of the imaging system. At-wavelength inspection also revealed defects that are not detectable by other inspection techniques.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reflecting Multilayer Coatings for EUV Projection Lithography","authors":"J. Underwood","doi":"10.1364/eul.1996.rmc162","DOIUrl":"https://doi.org/10.1364/eul.1996.rmc162","url":null,"abstract":"In the past 20 years, a very large effort has been devoted to the\u0000 development of multilayer reflecting coatings for the x-ray and\u0000 extreme ultraviolet (EUV) spectral regions. Out of this development\u0000 arose the concept of EUV projection lithography, and multilayer\u0000 coating represents the key technology which enable EUVPL. At the same\u0000 time it presents technical challenges to be overcome for EUVPL to\u0000 become a production tool. These lie in the physics and chemistry of\u0000 the multilayers, in the deposition technology and in the metrology of\u0000 the final coatings. In this paper these topics are reviewed, and some\u0000 interesting results obtained using the soft x-ray/EUV Calibration and\u0000 Standards beamline at the Advanced Light Source are presented.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122173589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Lithography for Manufacturing Integrated Circuits Beyond 180 nm","authors":"R. Gleason","doi":"10.1364/eul.1996.lm22","DOIUrl":"https://doi.org/10.1364/eul.1996.lm22","url":null,"abstract":"The integrated circuit industry will continue to rely on optical lithography to print patterns as small as 130 nm, and will try to extend its capability to even smaller dimensions. This will require improved mask technology, whose development has lagged the other elements of optical lithography. Potential successors to optical lithography need significantly more complicated masks, and those with large reduction ratios have an advantage. The most difficult technical challenges they face are to make masks without defects, and to keep them clean.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"275 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114244505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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