Extreme Ultraviolet Lithography (TOPS)最新文献

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Fabrication of MOS devices with extreme ultraviolet lithography 极紫外光刻技术制备MOS器件

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.a208

K. Nguyen, G. Cardinale, D. Tichenor, G. Kubiak, K. Berger, A. Ray-Chaudhuri, Y. Perras, S. Haney, R. Nissen, K. Krenz, R. Stulen, H. Fujioka, C. Hu, J. Bokor, D. Tennant, L. Fetter

引用次数: 0

Development of extreme ultraviolet interferometry for laser plasma source operation 激光等离子体源操作极紫外干涉测量技术的发展

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.om128

A. Ray-Chaudhuri, K. Krenz, R. Nissen, S. Haney, C. H. Fields, W. Sweatt, A. MacDowell

{"title":"Development of extreme ultraviolet interferometry for laser plasma source operation","authors":"A. Ray-Chaudhuri, K. Krenz, R. Nissen, S. Haney, C. H. Fields, W. Sweatt, A. MacDowell","doi":"10.1364/eul.1996.om128","DOIUrl":"https://doi.org/10.1364/eul.1996.om128","url":null,"abstract":"When characterizing an extreme ultraviolet (EUV) lithographic optical system, visible light interferometry is limited to measuring wavefront aberration caused by surface figure error while failing to measure wavefront errors induced by the multilayer coatings. This fact has generated interest in developing interferometry at an EUV camera's operational wavelength (at-wavelength testing), which is typically around 13 nm. While a laser plasma source (LPS) is being developed as a lithography production source, it has generally been considered that only an undulator located at a synchrotron facility can provide the necessary laser-like point source for EUV interferometry. Although an undulator-based approach has been successfully demonstrated, it would be advantageous to test a camera in its operational configuration. We are developing the latter approach by utilizing extended source size schemes to provide usable flux throughput. A slit or a grating mounted at the source plane can provide the necessary spatial coherence for lateral shearing interferometry. The usable source size is limited only by the well-corrected field of view of the camera under test. The development of this interferometer will be presented.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114778522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Nonspecular Scattering in EUV Lithography: Determining Specifications for Surface Finish EUV光刻中的非镜面散射:表面光洁度的确定规范

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.rmc167

D. Stearns, D. Gaines, B. Lafontaine, G. Sommargren, D. Sweeney, D. Kania, N. Ceglio

{"title":"Nonspecular Scattering in EUV Lithography: Determining Specifications for Surface Finish","authors":"D. Stearns, D. Gaines, B. Lafontaine, G. Sommargren, D. Sweeney, D. Kania, N. Ceglio","doi":"10.1364/eul.1996.rmc167","DOIUrl":"https://doi.org/10.1364/eul.1996.rmc167","url":null,"abstract":"As EUV lithography progresses from laboratory research to prototype\u0000 development the realistic performance of manufacturable components\u0000 becomes a primary concern. Nowhere is this more evident than in the\u0000 fabrication and implementation of the EUV imaging optics. It is now\u0000 well understood that the structure of the optical surfaces and the\u0000 multilayer coatings (ML) that make the surfaces reflective at soft\u0000 x-ray wavelengths must be specified and fabricated with unprecedented\u0000 accuracy. Errors in the structure, which include deviations in the\u0000 surface profile of the substrate and unintentional variations in the\u0000 multilayer period, cause aberations in the imaging process. When these\u0000 errors are at very long spatial wavelengths they are treated\u0000 deterministically, and can be evaluated (and hence corrected) using\u0000 interferometric methods now under development. However, there are\u0000 errors in the surface profile at all spatial frequencies. Describing\u0000 the exact structure of the surfaces of the optics at all spatial\u0000 scalelengths is an intractable problem. Instead the surface figure\u0000 errors at mid- and high-spatial frequency (called “roughness” or\u0000 “finish”) are treated statistically. Within this statistical\u0000 description, the effect of surface (and multilayer) roughness is to\u0000 remove intensity from the image (the specular field) and scatter it\u0000 throughout the image field. This nonspecular scattering is problematic\u0000 for two reasons: (1) it decreases the useful throughput of the optical\u0000 system and, (2) it produces a backround halo which reduces the\u0000 contrast of the image. In this paper we describe a method of relating\u0000 the nonspecular scattering to the roughness of the optical surfaces in\u0000 a distributed EUVL imaging system. Our ultimate goal is to develop a\u0000 robust specification of surface finish that can be used as the\u0000 guideline for manufacturing EUV optics.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"501 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123415194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

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