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Far-field Radiation From a Cleaved Cylindrical Dielectric Waveguide 劈裂圆柱介质波导的远场辐射
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-07-09 DOI: 10.1364/eul.1996.om113
C. Cerjan
{"title":"Far-field Radiation From a Cleaved Cylindrical Dielectric Waveguide","authors":"C. Cerjan","doi":"10.1364/eul.1996.om113","DOIUrl":"https://doi.org/10.1364/eul.1996.om113","url":null,"abstract":"A determination of the angular spread in the far-field radiation pattern of a cleaved dielectric waveguide is made from the modal structure at the surface of the waveguide using the Smythe vector integral formulation. The essential features are the following. First, a mode exists in the fiber that has no wavelength cutoff - the so-called HEn mode. This mode arises when non-azimuthal angular dependence of the incoming radiation is present. Second, the energy flow from this hybrid mode fills the fiber face and is not annularly shaped as opposed to the symmetric TE and TM modes. Third, the HE11 mode is not polarization dependent in contrast to the TE and TM modes. Fourth, for small differences in the indices of refraction between the core and cladding regions only the HE11 mode will be supported until the next modes appear around 3.33λ. At this point, three new modes can propagate and the modal structure of the radiation becomes more complicated. Fifth, the far-field radiation pattern will have negligibly small angular dependence in the phases of the vector fields when only the lowest mode is present; the amplitude has an overall angular dependent form factor. Furthermore, when other modes are present (above 3.33λ), the phase of the vector fields will acquire an angular dependence.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114794314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reticle blanks for extreme ultraviolet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers 极紫外光刻用毛坯:离子束溅射沉积低缺陷密度Mo/Si多层膜
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-06-24 DOI: 10.1116/1.589665
P. Kearney, C. Moore, S. Tan, S. Vernon, R. Levesque
{"title":"Reticle blanks for extreme ultraviolet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers","authors":"P. Kearney, C. Moore, S. Tan, S. Vernon, R. Levesque","doi":"10.1116/1.589665","DOIUrl":"https://doi.org/10.1116/1.589665","url":null,"abstract":"We report on the growth of low defect density Mo/Si multilayer (ML)\u0000 coatings. The coatings were grown in a deposition system specifically\u0000 designed for EUVL reticle blank fabrication. Complete, 81 layer, high\u0000 reflectance Mo/Si ML coatings were deposited on 150 mm diameter (100)\u0000 oriented Si wafer substrates using ion beam sputter deposition (IBSD).\u0000 Added defects, measured by optical scattering correspond to defect\u0000 densities of 2x10-2/cm2. This represents a\u0000 reduction in defect density of Mo/Si ML coatings by a factor of\u0000 105.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129831757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
Phase Shifting Diffraction Interferometry for Measuring Extreme Ultraviolet Optics 测量极紫外光学的相移衍射干涉法
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-06-04 DOI: 10.1364/eul.1996.om108
G. Sommargren
{"title":"Phase Shifting Diffraction Interferometry for Measuring Extreme Ultraviolet Optics","authors":"G. Sommargren","doi":"10.1364/eul.1996.om108","DOIUrl":"https://doi.org/10.1364/eul.1996.om108","url":null,"abstract":"Extreme ultraviolet projection lithography operating at a wavelength of 13nm requires surface figure accuracy on each mirror to be better than 0.25nm rms. A new type of interferometry, based on the fundamental process of diffraction, is described that can intrinsically achieve the required accuracy. Applying this principle, two independent spherical wavefronts are generated - one serves as the measurement wavefront and is incident on the optic or optical system under test and the other serves as the reference wavefront. Since they are generated independently their relative amplitude and phase can be controlled, providing contrast adjustment and phase shifting capability. Using diffraction from a single mode optical fiber, different interferometers can be configured to measure individual mirrors or entire imaging systems. Measurement of an EUV projection system is described.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121282386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 56
Improving the Figure of Very Good Mirrors by Deposition 用沉积法改善好镜的外形
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-06-01 DOI: 10.1364/eul.1996.dfo149
W. Sweatt, J. W. Weed, A. Farnsworth, M. Warren, C. C. Neumann, R. Goeke, R. Shagam
{"title":"Improving the Figure of Very Good Mirrors by Deposition","authors":"W. Sweatt, J. W. Weed, A. Farnsworth, M. Warren, C. C. Neumann, R. Goeke, R. Shagam","doi":"10.1364/eul.1996.dfo149","DOIUrl":"https://doi.org/10.1364/eul.1996.dfo149","url":null,"abstract":"Mid-spatial frequency errors of near-perfect mirrors can be reduced by deposition through a computer-generated mask without degrading the superpolish. Experimental results are presented.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125311843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Basic Issues Associated With Four Potential EUV Resist Schemes: Trilayer Organometallic Bilayer, or Plasma Deposited-Plasma & Developed Bilayer, and Silylated Resists 与四种潜在的EUV抗蚀剂方案相关的基本问题:三层有机金属双层，或等离子沉积-等离子体&发展双层，以及硅基化抗蚀剂
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-06-01 DOI: 10.1364/eul.1996.r33
D. Wheeler, G. Kubiak, A. Ray-Chaudhuri, C. Henderson
{"title":"Basic Issues Associated With Four Potential EUV Resist Schemes: Trilayer Organometallic Bilayer, or Plasma Deposited-Plasma & Developed Bilayer, and Silylated Resists","authors":"D. Wheeler, G. Kubiak, A. Ray-Chaudhuri, C. Henderson","doi":"10.1364/eul.1996.r33","DOIUrl":"https://doi.org/10.1364/eul.1996.r33","url":null,"abstract":"Four of the better developed resist schemes that are out growths of DUV (248 and 193 nm) resist development are considered as candidates for EUV. They are as follows: trilayer, a thin imaging layer on top of a refractory masking/pattern transfer layer on top of a planarizing and processing layer (PPL); solution-developed, organometallic bilayer where the imaging and masking layer have been combined into one material on top of a PPL; plasma deposited, photo-definable plasma developed organo-refractory material on top of a PPL; and finally silylated resists. They are examined in a very general form without regard to the specifics of chemistry or the variations within each group, but rather as to what is common to each group and how that affects their effectiveness as candidates for a near term EUV resist. In particular they are examined with respect to sensitivity, potential resolution, optical density, etching selectivity during pattern transfer, and any issues associated with pattern fidelity such as swelling.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117081263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Image Degradation from Surface Scatter in EUV Optics 基于表面散射的EUV光学图像退化
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-28 DOI: 10.2172/378183
D. Gaines, T. Daly, D. Stearns, B. Lafontaine, D. Sweeney, D. Fuchs
{"title":"Image Degradation from Surface Scatter in EUV Optics","authors":"D. Gaines, T. Daly, D. Stearns, B. Lafontaine, D. Sweeney, D. Fuchs","doi":"10.2172/378183","DOIUrl":"https://doi.org/10.2172/378183","url":null,"abstract":"Synchrotron-based 13 nm measurements of scatter from individual mirrors and an assembled imaging system for Extreme Ultraviolet Lithography have been compared to a model of image formation in the presence of scatter. The theory uses a Power Spectral Density description of the constituent optics to describe modifications to the image due to scatter. Reasonable agreement between measurements and theory was obtained for both individual mirrors and the assembled system.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132488187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface characterization of optics for EUV lithography EUV光刻光学元件的表面表征
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-28 DOI: 10.2172/378184
D. Gaines, D. Sweeney, K. Delong, S. Vernon, S. Baker, D. Tichenor, R. Kestner
{"title":"Surface characterization of optics for EUV lithography","authors":"D. Gaines, D. Sweeney, K. Delong, S. Vernon, S. Baker, D. Tichenor, R. Kestner","doi":"10.2172/378184","DOIUrl":"https://doi.org/10.2172/378184","url":null,"abstract":"The surface topography of optics fabricated for Extreme Ultraviolet Lithography has been measured using a combination of phase-measuring interferometery and atomic force microscopy. Power Spectral Densities were computed over spatial frequencies extending from 2.0×10-8 nm-1 to 7.7×10-2 nm-1. Roughness values for frequencies greater than 1.0×10-6 nm-1 were 0.64 nm rms for a spherical optic and 0.95 nm rms for an aspheric optic. These values are significantly larger than 0.088 nm rms, which as obtained using a spherical optic representative of current limits in surface polishing technology.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130714515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Phase-Shifting Point Diffraction Interferometry for At-Wavelength Testing of Lithographic Optics 光刻光学波长检测的移相点衍射干涉法
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-24 DOI: 10.1364/eul.1996.om118
E. Tejnil, K. Goldberg, H. Medecki, R. Beguiristain, J. Bokor, D. Attwood
{"title":"Phase-Shifting Point Diffraction Interferometry for At-Wavelength Testing of Lithographic Optics","authors":"E. Tejnil, K. Goldberg, H. Medecki, R. Beguiristain, J. Bokor, D. Attwood","doi":"10.1364/eul.1996.om118","DOIUrl":"https://doi.org/10.1364/eul.1996.om118","url":null,"abstract":"We report on the development of at-wavelength wavefront metrology for evaluation of extreme ultraviolet optics intended for use in projection lithography. Initially, a point diffraction interferometer was used and the experience acquired with this instrument led to the development of a new interferometer, the phase-shifting point diffraction interferometer. In this paper, point diffraction interferometry performed at EUV wavelengths is discussed. The design and implementation of the new phase-shifting point diffraction interferometer are described.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127542609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Zonal Placement Errors in Zone Plate Lenses 带片透镜的区域放置误差
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-24 DOI: 10.1364/eul.1996.om138
E. Tejnil, K. Goldberg, E. Anderson, J. Bokor
{"title":"Zonal Placement Errors in Zone Plate Lenses","authors":"E. Tejnil, K. Goldberg, E. Anderson, J. Bokor","doi":"10.1364/eul.1996.om138","DOIUrl":"https://doi.org/10.1364/eul.1996.om138","url":null,"abstract":"Diffractive zone plate lenses are critical elements in extreme ultraviolet and soft x-ray applications that require optical imaging or light concentration. To achieve good optical performance, the zone plate features must be accurately defined over the sizable area of the zone plate. Here the effects of zone placement fabrication errors on the performance of zone plates are investigated. Experimentally observed zone-plate diffraction patterns are compared to calculated profiles for different zone placement error models to estimate the magnitude of zonal placement errors.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132042459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preliminary investigation of an additive approach to the fabrication of precision aspheres 精密球面加成法的初步研究
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-24 DOI: 10.1364/eul.1996.dfo156
F. Weber, C. Montcalm, S. Vernon, D. Kania
{"title":"Preliminary investigation of an additive approach to the fabrication of precision aspheres","authors":"F. Weber, C. Montcalm, S. Vernon, D. Kania","doi":"10.1364/eul.1996.dfo156","DOIUrl":"https://doi.org/10.1364/eul.1996.dfo156","url":null,"abstract":"We report progress in the aspherization of precision optical substrates via deposition of graded period Mo/Si multilayer coatings using a masking technique. These preliminary results show good agreement between the measured and desired thickness profiles over 85% of the sample, however, thickness deviations of up to 7% are observed in the central area. The errors are attributed to misalignments of the mask relative to the substrate during deposition.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131168344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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