极紫外光刻用毛坯:离子束溅射沉积低缺陷密度Mo/Si多层膜

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-06-24 DOI:10.1116/1.589665

P. Kearney, C. Moore, S. Tan, S. Vernon, R. Levesque

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引用次数: 45

摘要

我们报道了低缺陷密度Mo/Si多层(ML)涂层的生长。该涂层是在专门为EUVL毛坯制造设计的沉积系统中生长的。利用离子束溅射沉积(IBSD)技术，在直径150 mm(100)取向的硅片衬底上沉积了完整的81层高反射率Mo/Si ML涂层。通过光学散射测量增加的缺陷对应于缺陷密度为2x10-2/cm2。这表示Mo/Si ML涂层的缺陷密度降低了105倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reticle blanks for extreme ultraviolet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers

We report on the growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system specifically designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm diameter (100) oriented Si wafer substrates using ion beam sputter deposition (IBSD). Added defects, measured by optical scattering correspond to defect densities of 2x10-2/cm2. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 105.

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Extreme Ultraviolet Lithography (TOPS)

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