Surface characterization of optics for EUV lithography

D. Gaines, D. Sweeney, K. Delong, S. Vernon, S. Baker, D. Tichenor, R. Kestner
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引用次数: 4

Abstract

The surface topography of optics fabricated for Extreme Ultraviolet Lithography has been measured using a combination of phase-measuring interferometery and atomic force microscopy. Power Spectral Densities were computed over spatial frequencies extending from 2.0×10-8 nm-1 to 7.7×10-2 nm-1. Roughness values for frequencies greater than 1.0×10-6 nm-1 were 0.64 nm rms for a spherical optic and 0.95 nm rms for an aspheric optic. These values are significantly larger than 0.088 nm rms, which as obtained using a spherical optic representative of current limits in surface polishing technology.
EUV光刻光学元件的表面表征
采用相位测量干涉法和原子力显微镜相结合的方法对极紫外光刻用光学元件的表面形貌进行了测量。计算了从2.0×10-8 nm-1到7.7×10-2 nm-1的空间频率上的功率谱密度。当频率大于1.0×10-6 nm-1时,球面光学元件的粗糙度值为0.64 nm rms,非球面光学元件的粗糙度值为0.95 nm rms。这些值明显大于0.088 nm的有效值,该有效值是使用代表当前表面抛光技术极限的球形光学器件获得的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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