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Aspheric Surface Generation Requirements for Magnetorheological Finishing 磁流变精加工的非球面生成要求
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.of98
D. Golini, S. Jacobs, Yiyang Zhou, E. Fess, M. Atwood
{"title":"Aspheric Surface Generation Requirements for Magnetorheological Finishing","authors":"D. Golini, S. Jacobs, Yiyang Zhou, E. Fess, M. Atwood","doi":"10.1364/eul.1996.of98","DOIUrl":"https://doi.org/10.1364/eul.1996.of98","url":null,"abstract":"A manufacturing system for grinding and polishing aspheres is under development at the Center for Optics Manufacturing (COM). Polishing is accomplished using the magnetorheological finishing (MRF) technique. MRF utilizes the unique properties of MR fluids to achieve high polishing removal rates. The fluid is carried through a magnetic field, in which its viscosity is increased by several orders of magnitude. The lens is polished in this viscous zone to optical quality. MRF is very effective at polishing high spatial frequency errors (microroughness) and at figuring global form errors (e.g. power), but has limitations for smoothing of mid-frequency errors. The work presented here will describe the problematic mid-spatial frequency regime, and use this a criteria for the aspheric grinding process.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115535078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mass-producible microtags Mass-producible microtags
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.a212
W. Sweatt, Michael R. Descou, A. Ray-Chaudhuri, K. Krenz, D. Tichenor, R. Stulen, M. Warren, S. Kravitz
{"title":"Mass-producible microtags","authors":"W. Sweatt, Michael R. Descou, A. Ray-Chaudhuri, K. Krenz, D. Tichenor, R. Stulen, M. Warren, S. Kravitz","doi":"10.1364/eul.1996.a212","DOIUrl":"https://doi.org/10.1364/eul.1996.a212","url":null,"abstract":"The microtag concept has been developed for security purposes. Microtags can be mass-produced using an advanced extreme-ultraviolet lithography (EUVL) tool currently under development at Sandia National Laboratories in Livermore. This method of fabrication results in features small enough (down to 100 nm) to deter most attempts at counterfeiting. Microtags may therefore be used to protect integrated circuits, currency, credit cards, and smart cards.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115616655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Feasibility of Various Discharge Configurations for High Intensity Lithium Vapor Discharge Source at 13.5 nm for EUVL EUVL 13.5 nm高强度锂蒸气放电源各种放电配置的可行性
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.es80
M. Klosner, W. Silfvast
{"title":"Feasibility of Various Discharge Configurations for High Intensity Lithium Vapor Discharge Source at 13.5 nm for EUVL","authors":"M. Klosner, W. Silfvast","doi":"10.1364/eul.1996.es80","DOIUrl":"https://doi.org/10.1364/eul.1996.es80","url":null,"abstract":"This study examines the possibility for two different discharge\u0000 configurations to achieve the plasma conditions required for a lithium\u0000 vapor discharge source operating at 13.5 nm. Due to the difficulties\u0000 of working with a pure lithium vapor system, the experiments were\u0000 carried out using noble gases. The results suggest that a lithium\u0000 vapor capillary discharge could be a suitable configuration for an\u0000 EUVL lamp.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122236400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Progress on an X-ray laser source at 135 A 135a x射线激光源的研究进展
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.es84
M. McGeoch
{"title":"Progress on an X-ray laser source at 135 A","authors":"M. McGeoch","doi":"10.1364/eul.1996.es84","DOIUrl":"https://doi.org/10.1364/eul.1996.es84","url":null,"abstract":"A repetitively pulsed fast plasma pinch has been used to generate strong emission on a number of transitions in highly ionized carbon, nitrogen, oxygen and neon, at a range of wavelengths between 95 and 350 Angstroms. The transitions are all fed by recombination during the expansion phase of the pinch. A typical starting geometry for the pinch is a helium-filled cylinder of diameter 2.5 cm and length 4 - 8 cm, containing approx 4 % propane, at a total pressure of 1 torr. The outside surface of the pinch cylinder is preionized using RF power before a longitudinal current of 200kA is initiated. The pinch reaches maximum compression and temperature after 150 nsec. The plasma column reaches a diameter of less than 400 microns. Its energy is 150 J and its temperature is estimated to be >100eV. Spectral lines are recorded axially on a 0.5 meter grazing incidence spectrometer. The strongest observed recombination line is from C V (1s2p - ls5d) at 175.67 Angstroms. It has a time-integrated intensity up to 11 times that of the helium II resonance line at 303.78 Angstroms. The latter line is radiatively trapped, representing the maximum brightness that the source can emit other than by the recombination mechanism. Other very strong lines include C VI (2p - 4d) at 134.99 Angstroms, of interest for EUV lithography. The identity of the strong spectral lines, their narrow width and their intensity are indicative of X-ray amplification. Preliminary length scaling shows an increase in intensity of 4x when the pinch length is doubled, from 4 cm to 8 cm.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114515545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heat-Resistance of Mo/Si Multilayer EUV Mirrors with Interleaved Carbon Barrier-Layers 交错碳阻挡层Mo/Si多层EUV反射镜的耐热性
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.rmc169
H. Takenaka, T. Kawamura, T. Haga
{"title":"Heat-Resistance of Mo/Si Multilayer EUV Mirrors with Interleaved Carbon Barrier-Layers","authors":"H. Takenaka, T. Kawamura, T. Haga","doi":"10.1364/eul.1996.rmc169","DOIUrl":"https://doi.org/10.1364/eul.1996.rmc169","url":null,"abstract":"Introducing interleaved carbon barrier-layers improves the heat resistance of Mo/Si multilayers . The soft x-ray reflectivities of the multilayers were calculated, and the effects of heating on both the reflectivities and layer structures of Mo/C/Si/C and Mo/Si multilayers were investigated using x-ray diffraction and transmission electron microscopy. The results show that, for applications using intense soft x-ray beams, Mo/Si multilayers with interleaved carbon barrier-layers are better mirrors than Mo/Si multilayers because they have much better heat resistance and almost the same EUV reflectivity.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125108647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phase correcting layers in EUV imaging systems for microlithography 微光刻用EUV成像系统中的相位校正层
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.dfo152
J. Braat
{"title":"Phase correcting layers in EUV imaging systems for microlithography","authors":"J. Braat","doi":"10.1364/eul.1996.dfo152","DOIUrl":"https://doi.org/10.1364/eul.1996.dfo152","url":null,"abstract":"The requirements on the shape accuracy of reflecting surfaces in a projection system for EUV (extreme UV) microlithography are very severe. We propose the use of thin correcting layers with a strongly reduced optical contrast in the wavelength region of interest. These thin layers can be applied with relatively large tolerances to tune the reflecting mirror surface to its required shape. The application of such phase-correcting layers is useful too when defects on the reflecting reticle (mask) need to be repaired.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121718119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance of a Two-Mirror, Four-Reflection, Ring-Field Optical System Operating at λ=13nm λ=13nm双镜四反射环场光学系统的性能
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.eie186
B. L. La Fontaine, D. Gaines, D. Kania, G. Sommargren, S. Baker, D. Ciarlo
{"title":"Performance of a Two-Mirror, Four-Reflection, Ring-Field Optical System Operating at λ=13nm","authors":"B. L. La Fontaine, D. Gaines, D. Kania, G. Sommargren, S. Baker, D. Ciarlo","doi":"10.1364/eul.1996.eie186","DOIUrl":"https://doi.org/10.1364/eul.1996.eie186","url":null,"abstract":"The performance of an Extreme Ultraviolet Lithography (EUVL) imaging optic was characterized by printing resolution test images in resist. While features as small as 0.137µm were successfuly printed, a resolution of 0.175µm better represents the performance of the system over the full 0.9mm2 image field. The contrast of the aerial image was estimated to be approximately 40% or less for the fine features printed. This low contrast value is attributed to a degradation of the modulation transfer function (MTF) due to the presence of scattered light in the image.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Projection Lithography with Ail-Reflecting Optics 反射光学投影光刻技术
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.osd181
O. Wood, J. Bjorkholm, A. MacDowell, S. Vaidya, D. Shafer
{"title":"Projection Lithography with Ail-Reflecting Optics","authors":"O. Wood, J. Bjorkholm, A. MacDowell, S. Vaidya, D. Shafer","doi":"10.1364/eul.1996.osd181","DOIUrl":"https://doi.org/10.1364/eul.1996.osd181","url":null,"abstract":"Recent efforts to design a high-numerical aperture (NA), all-reflecting, vacuum-ultraviolet (VUV) imaging system for projection lithography are described.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127908447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Basic Technologies for Extreme Ultraviolet Lithography 极紫外光刻基本技术
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.eww16
K. Murakami, T. Oshino, S. Shimizu, Wakana Wasa, H. Kondo, M. Ohtani, N. Kandaka, K. Mashima, Kazushi Nomura
{"title":"Basic Technologies for Extreme Ultraviolet Lithography","authors":"K. Murakami, T. Oshino, S. Shimizu, Wakana Wasa, H. Kondo, M. Ohtani, N. Kandaka, K. Mashima, Kazushi Nomura","doi":"10.1364/eul.1996.eww16","DOIUrl":"https://doi.org/10.1364/eul.1996.eww16","url":null,"abstract":"Research activities on the development of basic technologies for EUVL at Nikon, which include debris elimination of a laser plasma x-ray source, 3-mirror ring-field projection optics design, ring-field Köhler-critical illumination system design, asphere fabrication by partially corrective polishing, and electroplated reflection masks, are described.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128253831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Progress in the Development of EUV Imaging Systems EUV成像系统的发展进展
Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI: 10.1364/eul.1996.eww2
D. Tichenor, A. Ray-Chaudhuri, G. Kubiak, K. Nguyen, S. Haney, K. Berger, R. Nissen, Y. Perras, P. Jin, L. I. Weingarten, P. Keifer, R. Stulen, R. Shagam, W. Sweatt, T. G. Smith, O. Wood, A. MacDowell, J. Bjorkholm, T. Jewell, F. Zernike, B. Fix, H. Hauschildt
{"title":"Progress in the Development of EUV Imaging Systems","authors":"D. Tichenor, A. Ray-Chaudhuri, G. Kubiak, K. Nguyen, S. Haney, K. Berger, R. Nissen, Y. Perras, P. Jin, L. I. Weingarten, P. Keifer, R. Stulen, R. Shagam, W. Sweatt, T. G. Smith, O. Wood, A. MacDowell, J. Bjorkholm, T. Jewell, F. Zernike, B. Fix, H. Hauschildt","doi":"10.1364/eul.1996.eww2","DOIUrl":"https://doi.org/10.1364/eul.1996.eww2","url":null,"abstract":"An extreme ultraviolet (EUV) ring-field camera, comprised of 3 aspheric mirrors, has been fabricated and evaluated using visible light. The wavefront error (WFE) within a 1 mm × 25 mm field of view is 2.5 nm RMS. In a 10x Schwarzschild optic, having a 0.4 mm diameter field of view, an optically measured WFE of 1 nm RMS has been achieved. EUV images recorded in resist using the Schwarzschild camera are shown. The integration of this camera into a laboratory tool for device fabrication experiments is described.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"36 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128766835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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