极紫外光刻基本技术

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI:10.1364/eul.1996.eww16

K. Murakami, T. Oshino, S. Shimizu, Wakana Wasa, H. Kondo, M. Ohtani, N. Kandaka, K. Mashima, Kazushi Nomura

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引用次数: 1

摘要

介绍了尼康在EUVL基础技术开发方面的研究活动，包括激光等离子体x射线源的碎片消除、三镜环场投影光学设计、环场Köhler-critical照明系统设计、部分校正抛光非球面制造和电镀反射掩模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Basic Technologies for Extreme Ultraviolet Lithography

Research activities on the development of basic technologies for EUVL at Nikon, which include debris elimination of a laser plasma x-ray source, 3-mirror ring-field projection optics design, ring-field Köhler-critical illumination system design, asphere fabrication by partially corrective polishing, and electroplated reflection masks, are described.

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Extreme Ultraviolet Lithography (TOPS)

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