极紫外光刻技术制备MOS器件

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1900-01-01 DOI:10.1364/eul.1996.a208

K. Nguyen, G. Cardinale, D. Tichenor, G. Kubiak, K. Berger, A. Ray-Chaudhuri, Y. Perras, S. Haney, R. Nissen, K. Krenz, R. Stulen, H. Fujioka, C. Hu, J. Bokor, D. Tennant, L. Fetter

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摘要

本文报道了利用极紫外光刻技术制造MOS器件的首次演示。对准策略，掩模布局，掩模制造和器件特性将被报告。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of MOS devices with extreme ultraviolet lithography

This paper reports the first demonstration of MOS device fabrication using extreme ultraviolet lithography. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.

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Extreme Ultraviolet Lithography (TOPS)

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