K. Nguyen, G. Cardinale, D. Tichenor, G. Kubiak, K. Berger, A. Ray-Chaudhuri, Y. Perras, S. Haney, R. Nissen, K. Krenz, R. Stulen, H. Fujioka, C. Hu, J. Bokor, D. Tennant, L. Fetter
{"title":"Fabrication of MOS devices with extreme ultraviolet lithography","authors":"K. Nguyen, G. Cardinale, D. Tichenor, G. Kubiak, K. Berger, A. Ray-Chaudhuri, Y. Perras, S. Haney, R. Nissen, K. Krenz, R. Stulen, H. Fujioka, C. Hu, J. Bokor, D. Tennant, L. Fetter","doi":"10.1364/eul.1996.a208","DOIUrl":null,"url":null,"abstract":"This paper reports the first demonstration of MOS device fabrication using extreme ultraviolet lithography. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extreme Ultraviolet Lithography (TOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/eul.1996.a208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports the first demonstration of MOS device fabrication using extreme ultraviolet lithography. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
