测量散射对光刻系统性能的影响

Extreme Ultraviolet Lithography (TOPS) Pub Date : 1996-05-24 DOI:10.1364/eul.1996.eie203

B. L. Fontaine, T. Daly, H. Chapman, D. Gaines, D. Stearns, D. Sweeney, D. Kania

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引用次数: 4

摘要

对极紫外光刻(EUVL)系统成像平面上的散射光分布进行了原位测量。这些测量揭示了成像光学的调制传递函数的显著退化，相对于其在没有散射的情况下的值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Measuring the Effect of Scatter on the Performance of a Lithography System

The distribution of scattered light at the image plane of an extreme ultraviolet lithography (EUVL) system was measured, in situ. These measurements revealed a significant degradation of the modulation transfer function of the imaging optic, relative to its value in the absence of scattering.

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Extreme Ultraviolet Lithography (TOPS)

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