{"title":"An Advanced EUV source from water droplet laser plasma","authors":"F. Jin, M. Richardson, G. Shimkaveg, D. Torres","doi":"10.1364/eul.1996.es89","DOIUrl":null,"url":null,"abstract":"We describe the operation of a laser-plasma EUV source that satisfies\n all the requirements for projection lithography at 13 nm or 11.6 nm.\n We demonstrate that this source, based on mass-limited water droplets\n as a laser plasma target is essentially debris-free, produces\n narrow-line EUV emission, is continuous in operation and is\n practically cost less.","PeriodicalId":201185,"journal":{"name":"Extreme Ultraviolet Lithography (TOPS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extreme Ultraviolet Lithography (TOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/eul.1996.es89","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We describe the operation of a laser-plasma EUV source that satisfies
all the requirements for projection lithography at 13 nm or 11.6 nm.
We demonstrate that this source, based on mass-limited water droplets
as a laser plasma target is essentially debris-free, produces
narrow-line EUV emission, is continuous in operation and is
practically cost less.