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2006 IEEE Nanotechnology Materials and Devices Conference最新文献

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CMOS state of the arts and future potential CMOS的技术水平和未来潜力
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388864
Y. Nishi
{"title":"CMOS state of the arts and future potential","authors":"Y. Nishi","doi":"10.1109/NMDC.2006.4388864","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388864","url":null,"abstract":"The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121368403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and charateristics of NdFeB magnetic nanoparticle 钕铁硼磁性纳米颗粒的合成与性能研究
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388948
H. Cha, Y. H. Kim, Chang Woo Kim, Y. Kang
{"title":"Synthesis and charateristics of NdFeB magnetic nanoparticle","authors":"H. Cha, Y. H. Kim, Chang Woo Kim, Y. Kang","doi":"10.1109/NMDC.2006.4388948","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388948","url":null,"abstract":"NdFeB system nanoparticles using the mixture of NdFeB-oleate complexes under the pressure of 40 Pa at 380degC with argon gas without any solvent are formed by thermal decomposition method. The produced NdFeB system nanoparticles were collected as colloidal solution of CHCl3. The morphology and size of prepared NdFeB nanoparticles were investigated with transmission electron microscopy (TEM). The chemical composition was determined by electron probe X-ray micro-analyzer (EPMA). The crystal structure of the nanocomposite was corroborated by using X-ray powder diffraction (XRD). The magnetic property was measured with super conducting quantum interference device (SQUID). (Abstract)","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124994907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thickness dependent properties of nanocryastalline Sb2S3 electrode 纳米晶Sb2S3电极的厚度特性
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388732
V. Patil, Abhinandan H. Patil, Ji-won Choi, Yoon Seok Jin
{"title":"Thickness dependent properties of nanocryastalline Sb2S3 electrode","authors":"V. Patil, Abhinandan H. Patil, Ji-won Choi, Yoon Seok Jin","doi":"10.1109/NMDC.2006.4388732","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388732","url":null,"abstract":"Sb2S3 thin films of different thickness have been prepared by chemical bath deposition method using bismuth nitrate and thioacetamide in an aqueous medium. Films were deposited onto ordinary as well as FTO coated glass substrates. The photoelectrochemical (PEC) cell configuration was n-Sb2S3 / 0.25 M NaOH-0.25 Na2S -0.25 MS/C. From the current -voltage and capacitance -voltage plots, it is concluded that the photovoltaic output characteristics increases with increasing the thickness of the Sb2S3 thin films. Grain size increased with the film thickness which is confirmed by XRD and SEM. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-500 K temperature range. The conduction activation energy is found to be thickness dependent. TEP measurements shows n-type conduction. Carrier concentration increased with thickness.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125005075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High sensitivity gas sensors based on SnO2 nanowires 基于SnO2纳米线的高灵敏度气体传感器
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388815
K. Park, Youngjin Choi, In-Sung Hwang, Jae-Hwhan Park, Jae-Gwan Park
{"title":"High sensitivity gas sensors based on SnO2 nanowires","authors":"K. Park, Youngjin Choi, In-Sung Hwang, Jae-Hwhan Park, Jae-Gwan Park","doi":"10.1109/NMDC.2006.4388815","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388815","url":null,"abstract":"Network structure of SnO2 nanowires were fabricated on the electrodes and its gas sensing propertires for NO2 were examined. The nanowires were synthesized by thermal evaporation process at low temperature of 600~700degC. The diameter of the nanowires ranged from 50 nm to 200 nm depending on the processing temperature and the mixed oxygen content with Ar. X-ray diffraction analysis and transmission electron microscopy analysis indicated that the SnO2 nanowires are single crystals. At the concentration of NO2 of 20 ppm, the value of the sensitivity attaining 300, response time of 100 s, and recovery time of 200 s were observed.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125170358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Triple-walled carbon nanotube oscillator as high frequency device 三壁碳纳米管振荡器作为高频器件
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388900
Jun Ha Lee, J. Kang
{"title":"Triple-walled carbon nanotube oscillator as high frequency device","authors":"Jun Ha Lee, J. Kang","doi":"10.1109/NMDC.2006.4388900","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388900","url":null,"abstract":"The coupled oscillation of triple-walled carbon nanotube (CNT) oscillators consisting of (5n,5n) CNTs was investigated by using molecular dynamics simulations. High frequencies of triple-walled CNT oscillators are higher than frequencies of double-walled CNT oscillators. In spire of the different core CNT, the frequency peaks due to the interwall coupling are similar to each other as the number of walls increases. The operating frequencies due to the coupled motions for triple-walled CNTs can be estimated by the classical differential equations.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125963620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate Ru原子层沉积在阳极氧化铝纳米模板上制备纳米材料
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388940
W. Kim, Sang-joon Park, H. Kim
{"title":"Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate","authors":"W. Kim, Sang-joon Park, H. Kim","doi":"10.1109/NMDC.2006.4388940","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388940","url":null,"abstract":"Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] by thermal atomic layer deposition (ALD) using oxygen (O2) gas and plasma-enhanced ALD (PE-ALD) using ammonia (NH3) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123260773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed 无模板、无种子化学气相沉积制备独立铜纳米线的透射电镜分析
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388795
Changwook Kim, Sangho Lim, M. Briceno, I. Robertson, Hyungsoo Choi, K. Kim
{"title":"Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed","authors":"Changwook Kim, Sangho Lim, M. Briceno, I. Robertson, Hyungsoo Choi, K. Kim","doi":"10.1109/NMDC.2006.4388795","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388795","url":null,"abstract":"Copper nanowires (CuNWs) were grown by chemical vapor deposition using Cu(etac)[P(OEt)3|2 as the precursor. The structure of the CuNWs was a five-fold twinned crystal with a pentagonal-pyramid edge tip. The length of the CuNWs was around 5-10 mum and the diameter was in the range of 100-200 nm depending on the growth conditions. The phosphite ligands passivated the (001) side faces of the CuNWs and only the (111) faces grew, resulting in 1-dimensional copper wires.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125547073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and structural properties of PZT/ST films PZT/ST薄膜的电学和结构性能
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388772
Sang Heon Lee, Y. Choi
{"title":"Electrical and structural properties of PZT/ST films","authors":"Sang Heon Lee, Y. Choi","doi":"10.1109/NMDC.2006.4388772","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388772","url":null,"abstract":"The heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO<sub>3</sub>(ST) were fabricated by a sol-gel process. We investigated the effect of phase, composition, and interfacial state of SrTiO<sub>3</sub> thin films layer at interface between PZT thick films. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO<sub>3</sub> layer at interface of PZT thick films. The insertion of SrTiO<sub>3</sub> interlayer yielded PZT thick films with homogeneous and dense grain structure regardless of the number of SrTiO<sub>3</sub> layers. These results suggested that there is coexistence of PZT phase and SrTiO<sub>3</sub> phase or presence of the modified SrTiO<sub>3</sub> at the interfaces between PZT thick. The leakage current density of the PZT/SrTiO<sub>3-7</sub> film is less that 1.7 x 10<sup>-9</sup> A/cm<sup>2</sup> at S V.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126630960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs 初始氧化对n沟道mosfet 1/f噪声和亚阈值摆幅的影响
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388880
H. Joo, I. Han, Tae-Kyu Goo, Ooksang Yoo, Wonho Choi, Ga-Won Lee, H. Lee
{"title":"Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs","authors":"H. Joo, I. Han, Tae-Kyu Goo, Ooksang Yoo, Wonho Choi, Ga-Won Lee, H. Lee","doi":"10.1109/NMDC.2006.4388880","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388880","url":null,"abstract":"The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias IV.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116402350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of vertical channel nanoscale MOSFETs for low leakage DRAM cell 低漏DRAM电池垂直沟道纳米级mosfet模拟
2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI: 10.1109/NMDC.2006.4388879
Seung-Hyun Song, Jeong-Soo Lee, Y. Jeong
{"title":"Simulation of vertical channel nanoscale MOSFETs for low leakage DRAM cell","authors":"Seung-Hyun Song, Jeong-Soo Lee, Y. Jeong","doi":"10.1109/NMDC.2006.4388879","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388879","url":null,"abstract":"A vertical channel nanoscale MOSFET for low leakage dynamic random access memory (DRAM) cell is proposed. Due to longer channel length than that of the conventional planner structure, the vertical channel structure can dramatically reduce short channel effect (SCE). This structure features a source extension to enhance subthreshold swing (SS), and a neck sidewall spacer to reduce gate induced drain leakage (GIDL).","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"355 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122308262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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