Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed

Changwook Kim, Sangho Lim, M. Briceno, I. Robertson, Hyungsoo Choi, K. Kim
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Abstract

Copper nanowires (CuNWs) were grown by chemical vapor deposition using Cu(etac)[P(OEt)3|2 as the precursor. The structure of the CuNWs was a five-fold twinned crystal with a pentagonal-pyramid edge tip. The length of the CuNWs was around 5-10 mum and the diameter was in the range of 100-200 nm depending on the growth conditions. The phosphite ligands passivated the (001) side faces of the CuNWs and only the (111) faces grew, resulting in 1-dimensional copper wires.
无模板、无种子化学气相沉积制备独立铜纳米线的透射电镜分析
以Cu(etac)[P(OEt)3|2为前驱体,采用化学气相沉积法制备了铜纳米线。CuNWs的结构是一个五重孪晶,具有五角形金字塔边缘尖端。根据不同的生长条件,cunw的长度在5-10 nm左右,直径在100-200 nm之间。亚磷酸酯配体钝化了cunw的(001)面,只有(111)面生长,得到一维铜线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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