2006 IEEE Nanotechnology Materials and Devices Conference最新文献

{"title":"Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material","authors":"H. Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim","doi":"10.4313/JKEM.2008.21.8.699","DOIUrl":"https://doi.org/10.4313/JKEM.2008.21.8.699","url":null,"abstract":"Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO₂ are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O₂-and NH₃-annealed HfO₂ films are analyzed.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131718906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and investigation of SmCo5 magnetic nanoparticles","authors":"Yan Li, X. Zhang, Ri Qiu, Ru Qiao, Y. Kang","doi":"10.1016/J.COLSURFA.2007.04.150","DOIUrl":"https://doi.org/10.1016/J.COLSURFA.2007.04.150","url":null,"abstract":"","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"29 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124656960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum dots and nanowires for photonics applications","authors":"S. Mokkapati, H. Joyce, Yong Kim, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/NMDC.2006.4388857","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388857","url":null,"abstract":"We review our results on integrated photonic devices fabricated using In GaAs quantum-dots. Selective-area metal organic chemical vapor deposition (MOCVD) is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices. We will also review the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures grown by MOCVD. In addition to binary nanowires, such as GaAs, In As, and InP, we have demonstrated ternary In GaAs and Alga as nanowires. Core-shell nanowires consisting of GaAs cores with Alga as shells, and core-multi shell nanowires with several alternating shells of Alga as and GaAs, exhibit strong photoluminescence. Axial segments of In GaAs have been incorporated within GaAs nanowires to form GaAs/In GaAs nanowire superlattices.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129029033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The improvement of selective-area growth using plasma assisted molecular beam epitaxy for low ohmic contact resistance","authors":"Hui-chan Seo, S. Hong, K. Kim","doi":"10.1109/NMDC.2006.4388794","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388794","url":null,"abstract":"To achieve very low ohmic contact resistance, n⁺-GaN layer was selectively deposited using plasma assisted molecular beam epitaxy. During this process polycrystalline GaN grew on the patterned SiO₂ region which was subsequently removed by a heated KOH solution, resulting in damage on the n⁺-GaN surface. To prevent this damage, an additional SiO₂ layer was selectively deposited only on the n+-GaN region, producing a specific contact resistance (4.59 x 10^-7 Omega-cm²) much lower than that with the KOH etching damage (4.92 ~ 23.7 x 10^-6 Omega-cm²). Each of KOH etching included large pits (4.08 x 10⁸ cm^-2) and degraded current transport.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124726599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Copper-phthalocyanine based organic thin film transistor","authors":"T. Kwak, H.S. Kang, K. Kim, M. Cho, J. Lee, J. Joo","doi":"10.1109/NMDC.2006.4388937","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388937","url":null,"abstract":"Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22x10-3 cm2/Vsand -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"318 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124503380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vertically oriented TiO2 nanotube arrays prepared by anodic oxidation","authors":"Daejin Yang, Ho-gi Kim, Seong J. Cho, Won-Youl Choi","doi":"10.1109/NMDC.2006.4388807","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388807","url":null,"abstract":"Vertically oriented TiO2 nanotube arrays transformed from Ti thin film on silicon substrates are very attractive due to their potential for nanostructure integration on silicon [1]. We fabricated the vertically oriented TiO2 nanotube arrays using Ti thin film anodization under various processing conditions. To obtain the optimum condition for the vertically oriented TiO2 nanotube arrays, the various anodization voltages and temperatures were investigated in aqueous solutions mixed with highly corrosive Na2SO4/NaF/citric acid and NH4F in glycerol (1,2,3-propanetriol). In case of a good quality Ti thin film deposited at 500degC, vertically oriented TiO2 nanotube arrays were formed in NH4F in glycerol (1,2,3-propanetriol) at 20degC. FE-SEM images of vertically oriented and highly ordered TiO2 nanotube arrays were shown in Fig. 1. The pore diameter and center to center spacing of nanotube arrays were -50 nm and -100 nm, respectively. However, in case of Ti thin film deposited at room temperature, very thin TiO2 layer of-70 nm with a worm-like structure was grown on the porous layer [2]. Fig. 2 shows a typical current density transient curve recorded during anodization under a constant voltage for self-organized pore formation. The pore formation behavior of anodic titanium oxide was similar to that of porous anodic alumina (PAA) [3]. And the dependences of pore morphology and pore formation rate on process parameters were evaluated in Fig 3. The porous anodic oxide layer grown on titanium by electrochemical anodization was studied and compared to the mechanism governing the formation of porous alumina. X-ray diffraction patterns revealed that as-anodized titania nanotube arrays with amorphous phase were crystallized to anatase phase by annealing at 500degC. The fabrication of nanoporous anatase titania with well-defined cylindrical pores and adjustable pore spacing has been attracting considerable fundamental and technological interests because of the important applications in sensing and detection, separation, electronics, optoelectronics and as host materials for various nanostructures [4, 5]. The vertically oriented and highly ordered TiO2 nanotube arrays have applications to dye-sensitized solar cell and bio-sensing materials.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133292209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of carbon nanotubes by anodic aluminum oxide nano-template","authors":"Jaehyeong Lee, Sunghun Choi","doi":"10.1109/NMDC.2006.4388799","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388799","url":null,"abstract":"Anodic aluminum oxide (AAO) nano template was prepared by a two-step anodization method and Ni particles were carefully deposition at the bottom of pore of the template. Microwave plasma enhanced chemical vapor deposition (MPECVD) method was used grow carbon nanotubes (CNTs) on the template with this nickel as catalyst and CH4 as carbon source.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123103917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of photoluminescnce properties of Y2O3:Eu3+ nanophosphor by low temperature synthetic method","authors":"Sung‐Jei Hong, J. Han","doi":"10.1109/NMDC.2006.4388809","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388809","url":null,"abstract":"In this work, photoluminescence properties of the Y2O3:Eu3+ nanophosphor was enhanced by newly developed low temperature synthetic method. Distinguished from conventional method using high temperature of 1200degC, the synthetic temperature of the newly developed method can be lowered to 500degC by excluding chloride and nitric acid elements. Therefore, smaller sized nanoparticle could be achieved by lowering the temperature. The nanophosphor showed smaller particle size of 8 nm, and crystal structure of the smaller sized Y2O3:Eu3+ nanophosphor is mainly cubic crystal with orientation of (222), (440), and (400). In addition, the smaller sized Y2O3-10wt%Eu3+ nanophosphor synthesized by the low temperature method showed higher degree of crystallization of 11.6 of I(222/I(5M) ratio. Also, the Y2O3-10wt%Eu3+ nanophosphor showed excellent photoluminescence properties. That is, excitation wavelength was found at 250 nm, and it was the shortest one. As well, the most intensive photoluminescence emission peak could be achieved at 611 nm by using the excitation with shortest wavelength. So, photoluminescence properties could be enhanced by the newly developed low temperature synthetic method.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115765218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ferromagnetic III-Mn-V semiconductors: basic issues and prospects for spintronic applications","authors":"J. Furdyna, X. Liu, W. Lim, M. Dobrowolska","doi":"10.1109/NMDC.2006.4388849","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388849","url":null,"abstract":"Interest in the properties of ferromagnetic alloys of the type IIIi.1-XMnXV is primarily fueled by the promise which they hold of spin-electronic (\"spintronic\") applications. Although this promise is presently tempered by the fact that the Curie temperatures of III1-xMnxV alloys are still below 200K, progress in understanding the fundamental physics of these materials has been made on many fronts, which can in turn lead to breakthroughs toward high-temperature ferromagnetism in IIIi1-xMnxV alloys. In this paper we review the issues which determine the incorporation of Mn into the III-V lattice and of achieving high doping levels of the resulting material, both of which limit the Curie temperature. We then discuss mechanisms for controlling and manipulating the magnetic anisotropy of these materials, an issue that is of particular importance for the design of spin-injection-based devices; and we use our recent results on Ga1-xMnxAs films grown on vicinal (tilted) GaAs substrates as an illustration of the wide range of spin-based device opportunities that can be based on III1-xMnxV alloys as further progress is made in understanding and optimizing their properties.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"15 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120931964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scaling studies of coaxially gated carbon nanotube MOSFETs","authors":"C. Ahn, M. Shin","doi":"10.1109/NMDC.2006.4388896","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388896","url":null,"abstract":"The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation self-consistently with non-equilibrium Green's function formalism.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121282496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}