Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2008-08-01 DOI:10.4313/JKEM.2008.21.8.699

H. Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim

引用次数: 0

Abstract

Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO₂ are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O₂-and NH₃-annealed HfO₂ films are analyzed.

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在HfO2栅极材料中嵌入Ge非晶MOS电容器的电容电压特性

本文采用电容电压测量方法对Ge纳米晶(NCs)嵌入式MOS电容器进行了表征。采用高k介电介质HfO2作为MOS电容器的栅极材料，对o2和nh3退火HfO2薄膜的C-V曲线进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2006 IEEE Nanotechnology Materials and Devices Conference

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