{"title":"在HfO2栅极材料中嵌入Ge非晶MOS电容器的电容电压特性","authors":"H. Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim","doi":"10.4313/JKEM.2008.21.8.699","DOIUrl":null,"url":null,"abstract":"Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO<sub>2</sub> are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O<sub>2</sub>-and NH<sub>3</sub>-annealed HfO<sub>2</sub> films are analyzed.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material\",\"authors\":\"H. Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim\",\"doi\":\"10.4313/JKEM.2008.21.8.699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO<sub>2</sub> are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O<sub>2</sub>-and NH<sub>3</sub>-annealed HfO<sub>2</sub> films are analyzed.\",\"PeriodicalId\":200163,\"journal\":{\"name\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4313/JKEM.2008.21.8.699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4313/JKEM.2008.21.8.699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material
Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.
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