{"title":"Synthesis of carbon nanotubes by direct irradiation of microwave signal","authors":"Gyu-Young Son, Kun-Hong Lee, Yongshik Lee","doi":"10.1109/NMDC.2006.4388874","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388874","url":null,"abstract":"The proposed method of CNT synthesis is simple, fast and economical while further investigation is underway for a uniform synthesis of CNTs on a relatively large area. Current tends to be much stronger at the edges of metal strips and due to this edge effect, uniform heating of the metal catalyst layer is difficult to achieve. Parallel metal catalyst lines, instead of a single metal catalyst layer, is beneficial to circumvent the edge effects. Besides the edge effect, there are many other conditions and parameters that affect the absorption of microwave energy by thin metal films. Computer simulations were used to investigate the effect of these other variables.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121704995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Generation and characterization of copper nanowires, nanoparticles, and thin films by flow- limited field-injection electrostatic spraying","authors":"P. Heil, W. Gu, Sangho Lim, Hyungsoo Choi, K. Kim","doi":"10.1109/NMDC.2006.4388828","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388828","url":null,"abstract":"Nanoscale structures of copper including nanowires, nanoparticles, and thin films were produced using flow-limited field-injection electrostatic spraying (FFESS) combined with chemical vapor deposition (CVD). The FFESS system allowed for efficient vaporization and delivery of the CVD precursor. The system also allowed for control of the type of structures based on deposition parameters. X-ray photoelectron spectroscopy (XPS) data confirmed that the samples were pure copper.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121717850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Organic perylene single crystal based field-effect transistor","authors":"J. Lee, H.S. Kang, M. Kim, M. Cho, J. Joo","doi":"10.1109/NMDC.2006.4388935","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388935","url":null,"abstract":"We report on the fabrication and characteristics of organic field-effect transistors (OFETs) using a single crystal of perylene. Perylene single crystals were relatively fast grown in furnace with flowing nitrogen gas. The OFETs were prepared by placing a perylene single crystal flake onto SiO2/Si or polymer insulator/Si substrates. The field-effect mobility of the perylene based OFETs temperature. was measured to be 1.6 times 10-4cm2 /Vs at room","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sra, F. Reyes, F. Yeh, D.J. Yang, L. Overzet, G. Lee
{"title":"Bimetallic catalyzed continuous growth of carbon nanotube Forests","authors":"A. Sra, F. Reyes, F. Yeh, D.J. Yang, L. Overzet, G. Lee","doi":"10.1109/NMDC.2006.4388731","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388731","url":null,"abstract":"Iron-platinum (Fe-Pt) alloy nanoparticles are used as the catalyst for growth of carbon nanotubes. Multi-walled carbon nanotubes are synthesized in an atmospheric pressure plasma-enhanced CVD process. Carbon nanotube forests produced by this process can be removed mechanically, after which growth may be repeated without addition or reconditioning of the catalyst on substrate.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125648466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"AC analysis of MISIS capacitor","authors":"A. Sarkar, T. K. Bhattacharyya","doi":"10.1109/NMDC.2006.4388901","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388901","url":null,"abstract":"AC performance of MISIS(metal insulator semiconductor insulator semiconductor) capacitor has been analyzed in this paper. The performance of MISIS and MOS have been found to be similar but for the gate leakage current which is greatly suppressed in MISIS. Absence of threshold voltage shift in MISIS makes it a promising candidate for low power technology.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131677423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hot carrier stress in 70-nm nMOSFET with various bias conditions","authors":"Hyun-Sik Choi, S. Hong, Hee-Sung Kang, Y. Jeong","doi":"10.1109/NMDC.2006.4388747","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388747","url":null,"abstract":"This study presents a 70-nm nMOSFET degradation by hot carrier stress. The DC performance drifts of the device due to hot carrier stress are examined experimentally before and after stress for a 70-nm nMOSFET. Although the substrate current of a 70-nm nMOSFET has different characteristics from that of a long channel device, it can be a good indicator of hot carrier stress. The industrial practice to estimate the device lifetime using the measured lifetime versus 1/VDS plot cannot be applied to a 70-nm nMOSFET, but the method using the substrate current is useful to for this application.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116524467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Molecular chain-to-chain tunneling and nanowell devices for electronic transport studies in metal- alkanethiol-metal junctions","authors":"Hyunwook Song, N. Choi, Hyoyoung Lee, Takhee Lee","doi":"10.1109/NMDC.2006.4388765","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388765","url":null,"abstract":"Electronic transport in metal-alkanethiol-metal junctions is investigated. Using conducting atomic force microscopy we study molecular chain-to-chain tunneling which exhibits molecular tilt dependent intermolecular transport. And molecular devices with nanometer-scale junction area are fabricated and characterized. To clarify the molecular conduction mechanism, temperature-variable current-voltage measurements are performed.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"5 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120914402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sung‐Wook Choi, W. Kang, Hyo-Sop Kim, Byung-Sam Choi, Jae-Ho Kim
{"title":"Random network single-walled carbon nanotube biosensor by metal work function modulation","authors":"Sung‐Wook Choi, W. Kang, Hyo-Sop Kim, Byung-Sam Choi, Jae-Ho Kim","doi":"10.1109/NMDC.2006.4388911","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388911","url":null,"abstract":"We have fabricated highly sensitive network SWNT devices, which have successfully detected specific adsorptions of streptavidin at 1 pM concentrations.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120958464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of domain switching behavior of MTJ cells using magnetic force microscopy(MFM) and H-R loop analysis","authors":"J. Heo, Kyohyeok Kim, Taewan Kim, I. Chung","doi":"10.1109/NMDC.2006.4388931","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388931","url":null,"abstract":"Correlationship between electrical and magnetic properties of magnetic tunnel junction (MTJ) for Magnetic Random Access Memory(MRAM) was studied. MTJ (Ta/NiFeCr/PtMn/CoFe/Ru/CoFe/AlOx/CoFe/NiFe/Ta) was analyzed utilizing H-R loop and MFM images. We verified that the kink in H-MR loop comes from the vortex domain of free layer. In addition, we also observed a close relationship between domain switching behavior and anomalous H-R curve. These results would be useful for characterization of MTJ cell, thereby optimizing the process to realize the ultra high density MRAM.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130938890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Kim, Y. Jung, J. Wuenschell, Zhijun Sun, P. Kaur, Lei Wang, D. Waldeck
{"title":"Plasmonic phenomena in metal nanoapertures and chip-scale instrumentation for biochemical sensing","authors":"H. Kim, Y. Jung, J. Wuenschell, Zhijun Sun, P. Kaur, Lei Wang, D. Waldeck","doi":"10.1109/NMDC.2006.4388720","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388720","url":null,"abstract":"Plasmonic interactions in the metallic nanoaperture array allow for rich phenomena, such as concentration and channeling of light in the subwavelength scale structures. We present high-sensitivity surface plasmon resonance spectroscopy based on a metal nanoslit array. Strong confinement of optical fields in the slit region allows sensitive transduction of surface modification into a shift of surface plasmon resonance wavelength. A metal nanoslit array is also designed to provide spectral filtering in a fashion that is highly scaleable in physical dimension and channel capacity. A spectral sensing technology is presented that can shrink a spectrometer down to a chip-scale, yet offering high sensitivity (~lambda/100) in a broad spectral range (visible to NIR). Overcoming the limitations of diffractive optics, the plasmonics technology is expected to revolutionize the biomedical instrumentation area with it's unique capability in spectroscopy, imaging, and sensing and manipulation of biochemicals.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134392801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}