MISIS电容器的交流分析

2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI:10.1109/NMDC.2006.4388901

A. Sarkar, T. K. Bhattacharyya

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引用次数: 1

摘要

本文分析了金属绝缘子半导体(MISIS)电容器的交流性能。除了栅极漏电流被大大抑制外，MISIS的性能与MOS相似。在MISIS中没有阈值电压偏移使其成为低功耗技术的一个有前途的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AC analysis of MISIS capacitor

AC performance of MISIS(metal insulator semiconductor insulator semiconductor) capacitor has been analyzed in this paper. The performance of MISIS and MOS have been found to be similar but for the gate leakage current which is greatly suppressed in MISIS. Absence of threshold voltage shift in MISIS makes it a promising candidate for low power technology.

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2006 IEEE Nanotechnology Materials and Devices Conference

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