酞菁铜基有机薄膜晶体管

2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-12-01 DOI:10.1109/NMDC.2006.4388937

T. Kwak, H.S. Kang, K. Kim, M. Cho, J. Lee, J. Joo

{"title":"酞菁铜基有机薄膜晶体管","authors":"T. Kwak, H.S. Kang, K. Kim, M. Cho, J. Lee, J. Joo","doi":"10.1109/NMDC.2006.4388937","DOIUrl":null,"url":null,"abstract":"Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22x10-3 cm2/Vsand -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"318 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Copper-phthalocyanine based organic thin film transistor\",\"authors\":\"T. Kwak, H.S. Kang, K. Kim, M. Cho, J. Lee, J. Joo\",\"doi\":\"10.1109/NMDC.2006.4388937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22x10-3 cm2/Vsand -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.\",\"PeriodicalId\":200163,\"journal\":{\"name\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"318 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2006.4388937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2006.4388937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

制备了酞菁铜基有机薄膜晶体管(OTFTs)。采用有机分子束沉积系统将Cu-Pc薄膜作为活性层沉积在SiO2层上作为栅极绝缘体。OTFT器件表现出p型特性，场效应迁移率和阈值电压分别为1.22x10-3 cm2/V和-40 V。通过对载流子迁移率的温度依赖性，估计活化能为0.073 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Copper-phthalocyanine based organic thin film transistor

Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22x10-3 cm2/Vsand -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE Nanotechnology Materials and Devices Conference

自引率

0.00%

发文量