{"title":"同轴门控碳纳米管mosfet的标度研究","authors":"C. Ahn, M. Shin","doi":"10.1109/NMDC.2006.4388896","DOIUrl":null,"url":null,"abstract":"The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation self-consistently with non-equilibrium Green's function formalism.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Scaling studies of coaxially gated carbon nanotube MOSFETs\",\"authors\":\"C. Ahn, M. Shin\",\"doi\":\"10.1109/NMDC.2006.4388896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation self-consistently with non-equilibrium Green's function formalism.\",\"PeriodicalId\":200163,\"journal\":{\"name\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2006.4388896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2006.4388896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Scaling studies of coaxially gated carbon nanotube MOSFETs
The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation self-consistently with non-equilibrium Green's function formalism.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
