Ru原子层沉积在阳极氧化铝纳米模板上制备纳米材料

W. Kim, Sang-joon Park, H. Kim
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引用次数: 0

摘要

研究了Ru原子层沉积(ALD)和阳极氧化铝(AAO)制备一维金属纳米结构的工艺。采用氧(O2)气热原子层沉积(ALD)和氨(NH3)等离子体等离子体增强ALD (PE-ALD)法制备了双(乙基环戊二烯基)钌[Ru(EtCp)2]的低电阻率极纯钌薄膜。此外,采用多步阳极氧化法在铝板和铝膜上制备了有序多孔氧化铝纳米模板。研究了Ru ALD法填充纳米模板制备金属纳米结构的工艺条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanomaterial fabrication by Ru atomic layer deposition on anodic aluminum oxide nanotemplate
Ru Atomic layer deposition (ALD) and anodic aluminum oxide (AAO) process were studied for fabrication of one dimensional metallic nanostructure. Low resistivity and very pure ruthenium thin films were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] by thermal atomic layer deposition (ALD) using oxygen (O2) gas and plasma-enhanced ALD (PE-ALD) using ammonia (NH3) plasma. In addition, regularly ordered porous anodic aluminum oxide nanotemplates were fabricated on aluminum plate and Al film by multistep-step anodization method. The process conditions for Ru ALD process to fabricate metallic nanostructure by filling the nanotemplates were investigated.
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