{"title":"PZT/ST薄膜的电学和结构性能","authors":"Sang Heon Lee, Y. Choi","doi":"10.1109/NMDC.2006.4388772","DOIUrl":null,"url":null,"abstract":"The heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO<sub>3</sub>(ST) were fabricated by a sol-gel process. We investigated the effect of phase, composition, and interfacial state of SrTiO<sub>3</sub> thin films layer at interface between PZT thick films. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO<sub>3</sub> layer at interface of PZT thick films. The insertion of SrTiO<sub>3</sub> interlayer yielded PZT thick films with homogeneous and dense grain structure regardless of the number of SrTiO<sub>3</sub> layers. These results suggested that there is coexistence of PZT phase and SrTiO<sub>3</sub> phase or presence of the modified SrTiO<sub>3</sub> at the interfaces between PZT thick. The leakage current density of the PZT/SrTiO<sub>3-7</sub> film is less that 1.7 x 10<sup>-9</sup> A/cm<sup>2</sup> at S V.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and structural properties of PZT/ST films\",\"authors\":\"Sang Heon Lee, Y. Choi\",\"doi\":\"10.1109/NMDC.2006.4388772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO<sub>3</sub>(ST) were fabricated by a sol-gel process. We investigated the effect of phase, composition, and interfacial state of SrTiO<sub>3</sub> thin films layer at interface between PZT thick films. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO<sub>3</sub> layer at interface of PZT thick films. The insertion of SrTiO<sub>3</sub> interlayer yielded PZT thick films with homogeneous and dense grain structure regardless of the number of SrTiO<sub>3</sub> layers. These results suggested that there is coexistence of PZT phase and SrTiO<sub>3</sub> phase or presence of the modified SrTiO<sub>3</sub> at the interfaces between PZT thick. The leakage current density of the PZT/SrTiO<sub>3-7</sub> film is less that 1.7 x 10<sup>-9</sup> A/cm<sup>2</sup> at S V.\",\"PeriodicalId\":200163,\"journal\":{\"name\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"volume\":\"134 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Nanotechnology Materials and Devices Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2006.4388772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2006.4388772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and structural properties of PZT/ST films
The heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO3(ST) were fabricated by a sol-gel process. We investigated the effect of phase, composition, and interfacial state of SrTiO3 thin films layer at interface between PZT thick films. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO3 layer at interface of PZT thick films. The insertion of SrTiO3 interlayer yielded PZT thick films with homogeneous and dense grain structure regardless of the number of SrTiO3 layers. These results suggested that there is coexistence of PZT phase and SrTiO3 phase or presence of the modified SrTiO3 at the interfaces between PZT thick. The leakage current density of the PZT/SrTiO3-7 film is less that 1.7 x 10-9 A/cm2 at S V.
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