初始氧化对n沟道mosfet 1/f噪声和亚阈值摆幅的影响

2006 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2006-10-01 DOI:10.1109/NMDC.2006.4388880

H. Joo, I. Han, Tae-Kyu Goo, Ooksang Yoo, Wonho Choi, Ga-Won Lee, H. Lee

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引用次数: 0

摘要

研究了初始氧化对mosfet低频噪声和亚阈值摆幅的影响。初始氧化和SS降低显著改善了低频噪声。对实验结果的分析揭示了众所周知的低频噪声来源的争议。在本文中，通过栅极偏置IV表征了薄栅氧化n沟道mosfet中初始氧化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs

The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias IV.

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2006 IEEE Nanotechnology Materials and Devices Conference

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