{"title":"Fabrication of gold nanowires using self-organized porous alumina template","authors":"H. Kwon, Seungeun Lee, O. Kwon","doi":"10.1109/NMDC.2006.4388789","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388789","url":null,"abstract":"Highly ordered gold nanowire arrays have been prepared by low frequency electrodeposition from self-organized porous alumina templates. The porous alumina templates were fabricated using the two-step anodization process. The diameter of nanowire is 40 nm, which is dependent on the pores of the template membrane we prepared. The length of gold nanowires was determined by varying the operating time of electrodeposition.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122842565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Micromagnetic study on the threshold current density for continuous domain wall motion","authors":"W. Kim, S. Seo, T. Lee, Kyung-Jin Lee","doi":"10.1109/NMDC.2006.4388784","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388784","url":null,"abstract":"Theoretical study by Tatara and Kohno predicted the threshold current density (Jc) above which spin current enables the continuous domain wall motion in the adiabatic limit [1]. We investigated on this point by micromagnetic simulation. It was found out that Jc is proportional to the product of the hard-axis anisotropy and the domain wall width as predicted in [1]. However, Jc was much lower than the predicted value.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114470817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Increase in the luminescence efficiency of R·G·B LED via the controlling texture of AZO thin films","authors":"Kyeong-Min Kim, Eun-Mi Jin, Yong-Kab Kim","doi":"10.1109/NMDC.2006.4388892","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388892","url":null,"abstract":"Transparent conducting AZO thin films were prepared by RF magnetron sputtering system with glass substrate (corning 1737) and annealed during 2 hr at 400degC in vacuum ambient and 600degC in oxygen ambient, respectively. The smooth AZO films were etched in diluted HCL (0.5%) to check the surface properties with the ambient post-annealing process. Using the methods of SEM and Spectro-radiometer, we analyzed the optical properties of the textured AZO thin films. We confirmed that the vacuum ambient post-annealing process is effective method for increasing the efficiency of long wavelength LED. The oxygen ambient post-annealing process is suitable method for increasing the efficiency of short wavelength LED. We presumed that the ambient post-annealing process can control textured surface of AZO thin films for increasing the efficiency of LED.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122116433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Short course II-B Bio-nanoelectronics. Enabling a new paradigm of information technology: acquiring info and executing on info","authors":"J. Xu, C. Tillinghast","doi":"10.1109/NMDC.2006.4399683","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4399683","url":null,"abstract":"Information technology has been a great success, but also a narrow one -it has marched along the narrow path of processing and transmitting information. While there is still more room to continue the march along this same path, there appears to be much greater rooms in the space to the left -acquiring information, to the right -executing on information, and on the \"inside\" -acquiring and executing on information inside human body. This new paradigm of information technology can be well served by advances in bio-nano electronics. By way of presenting specific examples, this short course introduces a few basic concepts, methods and recent advances on three fronts of bio-nano electronics: (a) DNA directed self-assembly and growth of nanostructures (b) Real-time, scalable, reconfigurable, and direct read-out of bio-molecular signals (by nanoelectronic circuitry via programmable DNA wiring and addressing) (c) Intracellular probing, delivery, and exploration by nano-electrodes.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116754844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dielectric properties of epoxy/Al2O3 nanocomposites depending on frequency and temperature","authors":"J. Ahn, Jae‐Jun Park","doi":"10.1109/NMDC.2006.4388956","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388956","url":null,"abstract":"In this study, we investigated dielectric properties that fabricated samples with Al<sub>2</sub>O<sub>3</sub> nanoparticles that have excellent thermal stability. And we examined equivalent circuit of nanocomposites through frequency response and could understand structure in Epoxy/Al<sub>2</sub>O<sub>3</sub> from equivalent circuit. Also transition temperature was occurred by increasing temperature, investigated that changing permittivity due to phase transition. Al<sub>2</sub>O<sub>3</sub> have excellent thermal stability, proper permittivity and Epoxy/Al<sub>2</sub>O<sub>3</sub> nanocomposites expressed an equivalent circuit as two series and parallels RC circuit in this study. And we analyzed an equivalent circuit include bulk, grain, grain boundary in Epoxy/Al<sub>2</sub>O<sub>3</sub> nanocomposites. As a results of this study, permittivity decreased by increasing frequency, and relaxation phenomenon occurred. Also we understand that epsiv\" shows transition temperature about 110degC.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A study on magnetic property loss of Nd-Fe-B permanent magnet by γ-ray irradiation","authors":"S. Lee, Y. Kang","doi":"10.1109/NMDC.2006.4388955","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388955","url":null,"abstract":"The effects of the gamma-ray irradiation on the magnetic properties of Nd-Fe-B permanent magnetic had been investigated. The magnetic flux loss of Nd-Fe-B magnet before and after irradiation was measured. Due to the accumulated high energy, gamma-ray irradiation was used for the magnetic property loss of Nd-Fe-B magnet. The experimental results showed that the gamma-ray irradiation affected the magnetic properties of permanent magnet by radiation dose at 0 kGy, 100 kGy, 500 kGy, and 700 kGy. Nd-Fe-B magnet has the decreased Ms and Hc by gamma-ray irradiation. And the characterizations were done by XRD, FE-SEM images, and SQUID, etc.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126982402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanomaterials based optical and electrochemical biosensors","authors":"Eiichi Tamiya","doi":"10.1109/NMDC.2006.4388869","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388869","url":null,"abstract":"The interaction of nanotechnology and biomedical sciences opens the possibility for a wide variety of biological research topics and medical uses at the molecular and cellular level. The fundamental features of biological systems such as self-assembly, self-replication, and highly specific recognition open new routes to extend solid-state top-down fabrication nanotechnologies. For example, nanomaterials like carbon nanotube, metal nanoparticle and quantum dots contribute to improve performance of biosensors and biochips. The application of nanotechnology in biomedical sciences will provide information with unprecedented precision and sensitivity, which will not only provide much deeper understanding of biosystems but also lead to the development of new revolutionary modalities of biomolecular manufacturing, early diagnostics, medical treatment, and disease prevention beyond the cellular level to that of DNA and individual proteins, the building blocks of the life process. Nanobiotechnology surely open new reliable products in the medical healthcare and food safety and environmental protection/energy conversion system. In my talk,, nanostructure based optical biosensors and electrochemical biosensors using nanomaterilas will be focused as follows.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121488614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Inverstigation of a-SixGe1∼x:H nano films deposited by RF magnetron sputtering for heterojunction silicon solar cells","authors":"Dowan Kim, Eun-joo Lee, Soo-hong Lee","doi":"10.1109/NMDC.2006.4388887","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388887","url":null,"abstract":"Hydrogenated amorphous silicon germanium (a-SiGe:H) thin films were deposited at 400degC by RF magnetron sputtering, with forming gas (mixture of argon and 4% hydrogen). A film thickness of 100 nm was obtained by using a selective target of a-SixGe1-x (x=0.92). In order to study the properties of the films prepared by this method, the samples were examined by alpha-step (alpha-step), atomic force microscopy (AFM) and scanning electron microscope (SEM) -energy dispersive X-ray (EDX). Measurements showed that this film has a nano-thickness and nano-morphology. And this film has a possibility for solar cells that the optical band gap of the thin film, which is from 1.7 to 1.0 eV. Accordingly, this film will be expected for improvement on heterojunction solar cells application ability.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126539504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes","authors":"K. Kim, I. Han, Y. Yoo, J. I. Lee, Tae Geun Kim","doi":"10.1109/NMDC.2006.4388755","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388755","url":null,"abstract":"We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134546008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interfacial layer thickness dependence of the low- frequency noise in high-k dielectric MOSFETs","authors":"H. Nam, Jungil Lee, Ilki Han, Haesuk Yang","doi":"10.1109/NMDC.2006.4388881","DOIUrl":"https://doi.org/10.1109/NMDC.2006.4388881","url":null,"abstract":"We present the results of simulation study on the low-frequency excess noise in high-k HfO2/SiO2 dual dielectric n-MOSFET's. Based on the 'unified model' where the tunneling to the traps in the oxides is the major noise generation mechanism, we show how the low frequency noise density depends on the thickness of the interfacial oxide layer.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"466 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131886713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}