V. Patil, Abhinandan H. Patil, Ji-won Choi, Yoon Seok Jin
{"title":"Thickness dependent properties of nanocryastalline Sb2S3 electrode","authors":"V. Patil, Abhinandan H. Patil, Ji-won Choi, Yoon Seok Jin","doi":"10.1109/NMDC.2006.4388732","DOIUrl":null,"url":null,"abstract":"Sb2S3 thin films of different thickness have been prepared by chemical bath deposition method using bismuth nitrate and thioacetamide in an aqueous medium. Films were deposited onto ordinary as well as FTO coated glass substrates. The photoelectrochemical (PEC) cell configuration was n-Sb2S3 / 0.25 M NaOH-0.25 Na2S -0.25 MS/C. From the current -voltage and capacitance -voltage plots, it is concluded that the photovoltaic output characteristics increases with increasing the thickness of the Sb2S3 thin films. Grain size increased with the film thickness which is confirmed by XRD and SEM. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-500 K temperature range. The conduction activation energy is found to be thickness dependent. TEP measurements shows n-type conduction. Carrier concentration increased with thickness.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2006.4388732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Sb2S3 thin films of different thickness have been prepared by chemical bath deposition method using bismuth nitrate and thioacetamide in an aqueous medium. Films were deposited onto ordinary as well as FTO coated glass substrates. The photoelectrochemical (PEC) cell configuration was n-Sb2S3 / 0.25 M NaOH-0.25 Na2S -0.25 MS/C. From the current -voltage and capacitance -voltage plots, it is concluded that the photovoltaic output characteristics increases with increasing the thickness of the Sb2S3 thin films. Grain size increased with the film thickness which is confirmed by XRD and SEM. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-500 K temperature range. The conduction activation energy is found to be thickness dependent. TEP measurements shows n-type conduction. Carrier concentration increased with thickness.