无模板、无种子化学气相沉积制备独立铜纳米线的透射电镜分析

Changwook Kim, Sangho Lim, M. Briceno, I. Robertson, Hyungsoo Choi, K. Kim
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引用次数: 0

摘要

以Cu(etac)[P(OEt)3|2为前驱体,采用化学气相沉积法制备了铜纳米线。CuNWs的结构是一个五重孪晶,具有五角形金字塔边缘尖端。根据不同的生长条件,cunw的长度在5-10 nm左右,直径在100-200 nm之间。亚磷酸酯配体钝化了cunw的(001)面,只有(111)面生长,得到一维铜线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed
Copper nanowires (CuNWs) were grown by chemical vapor deposition using Cu(etac)[P(OEt)3|2 as the precursor. The structure of the CuNWs was a five-fold twinned crystal with a pentagonal-pyramid edge tip. The length of the CuNWs was around 5-10 mum and the diameter was in the range of 100-200 nm depending on the growth conditions. The phosphite ligands passivated the (001) side faces of the CuNWs and only the (111) faces grew, resulting in 1-dimensional copper wires.
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