{"title":"Development and implementation of a new multiport calibration algorithm","authors":"A. Ferrero, V. Teppati","doi":"10.1109/ARFTG.2007.8376227","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376227","url":null,"abstract":"In this paper the development and the application of a recently proposed calibration algorithm will be presented. This algorithm is based on a new error model, particularly developed for multiport Network Analyzers having reduced reflectometer architecture, i.e. an architecture with partial reflectometers at some ports. The main features are the extreme flexibility and the reduction of calibration time as well as required standards.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131019553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Marchetti, K. Buisman, M. Pelk, L. Smith, L. D. de Vreede
{"title":"A low-cost pulsed RF & I-V measurement setup for isothermal device characterization","authors":"M. Marchetti, K. Buisman, M. Pelk, L. Smith, L. D. de Vreede","doi":"10.1109/ARFTG.2007.8376175","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376175","url":null,"abstract":"A low-cost, highly versatile, pulsed RF — pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114723398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A commercial multi-line TRL calibration","authors":"L. Hayden","doi":"10.1109/ARFTG.2007.8376226","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376226","url":null,"abstract":"A commercial implementation of the reference multi-line TRL has recently become available [1]. While the algorithm implementation has intentionally been kept as true to the previously published details [2]–[3] as possible, the implementation in a current and supported software application enables new capabilities. In addition to support for reference line Zo and propagation constant determination, Zo renormalization, and error term error bound comparison [4], the new implementation supports a wide-variety of vector network analyzer models. Fully automated MLTRL calibration is enabled by using programmable stage and positioner moves with appropriately equipped semi-automatic probe stations. The automation and improved consistency of probe placement results in dramatically faster and less laborious calibration with better calibration repeatability.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116426248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Gering, S. Nedeljkovic, F. Kharabi, J. McMacken, D. Halchin
{"title":"Transistor model validation through 50 Ohm, vector network analyzer power sweeps","authors":"J. Gering, S. Nedeljkovic, F. Kharabi, J. McMacken, D. Halchin","doi":"10.1109/ARFTG.2007.8376174","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376174","url":null,"abstract":"This paper presents a method of validating transistor models using 50 ohm power sweeps from a vector network analyzer (VNA). This validation approach is used with both a heterojunction bipolar transistor (HBT) used in amplifier designs and a pseudomorphic high electron mobility transistor (PHEMT) used in switch designs. The setups measure the vector transmission and input reflection coefficients at the drive frequency as well as the scalar power at the second and third harmonics. For the HBT/amplifier case, the power is swept from small-signal levels to heavy compression, and the bias is varied to fully exercise the device I-V plane. For the PHEMT/switch case, the power is swept up to +36 dBm so that the device sees power levels equivalent to a cellular transmit/receive switch. Lastly, for the HBT/amplifier case, a fitting metric is presented, which allows a quantitative comparison of the \"goodness of the fit\" of various models to the measured power sweep data.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"64 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122749463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Vector measurement of microwave interferograms with antenna matrix","authors":"J. Zela, K. Hoffmann, P. Hudec","doi":"10.1109/ARFTG.2007.8376234","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376234","url":null,"abstract":"A new antenna matrix for vector measurements of microwave interferograms at frequency 2.4 GHz was developed. Influence of mutual couplings between antennas in the antenna matrix on measurement of microwave interferograms, particularly on measurement of their minimum values was studied. A simulation of corresponding measurement errors based on measurement of a, real antenna matrix, proposal and experimental verification of a new calibration and correction method are presented as well.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123211067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Z. Landa, J. E. Zuniga-Juarez, J. Reynoso‐Hernández, M. C. Maya‐Sanchez, J. D. del Valle-Padilla, J. R. Loo-Yau
{"title":"An investigation on the modified cold-fet method for determining the gate resistance and inductance of the packaged GaN and SiC transistors","authors":"A. Z. Landa, J. E. Zuniga-Juarez, J. Reynoso‐Hernández, M. C. Maya‐Sanchez, J. D. del Valle-Padilla, J. R. Loo-Yau","doi":"10.1109/ARFTG.2007.8376232","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376232","url":null,"abstract":"Recently, a new method for calculating gate resistance and inductance of on-wafer AlGaN/GaN HEMTs was presented. In this paper the performance of the method mentioned before is investigated on commercially available packaged power GaN HEMTs (CHG35015) and power SiC MESFETs (CRF24010f for the determination of Rg and Lg of the equivalent circuit model. Experimental results show very good Zjj parameter match of the cold FET of the GaN HEMT and SiC MESFET and confirm the generality of the method.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122643703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of RF de-embedding approaches for device characterization","authors":"T. O'Sullivan, P. Asbeck","doi":"10.1109/ARFTG.2007.8376177","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376177","url":null,"abstract":"Device measurements for characterization and modeling are typically performed on wafer with the devices embedded in a probing padframe. The parasitic elements associated with these padframes need to be removed from both the DC and RF measurements for accurate representation of the device performance. In this paper the effectiveness of various RF de-embedding techniques is analyzed for various padframe types and sizes. The difference between desired and de-embedded DUT S-parameters versus frequency is shown for both the Open-Short and TRL de-embedding techniques, and conclusions are made as to which de-embedding technique is more appropriate for a given padframe size and measurement frequency range.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125274631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Doo, P. Roblin, V. Balasubramanian, Richard Taylor, K. Dandu, G. Jessen, R. Rojas
{"title":"Adaptive second harmonic active load for pulsed-IV/RF class-B operation","authors":"S. Doo, P. Roblin, V. Balasubramanian, Richard Taylor, K. Dandu, G. Jessen, R. Rojas","doi":"10.1109/ARFTG.2007.8376172","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376172","url":null,"abstract":"To provide a proper load impedance termination under class-B operation, for pulsed-IV biasing and pulsed-RF (pulsed-IV/RF) excitations, an adaptive harmonic active load is presented. Pulsed-IV/RF measurement is the technique of choice for characterization and modeling of RF devices as it guarantees that the transistor is not afflicted by low-frequency memory effects. It is also a promising technique to assist with the design of efficient pulsed power-amplifiers for TDMA or radar applications. In this work the multi-harmonic active load-pull technique used for CW excitations is extended to pulsed-IV pulsed RF excitations. The harmonic load was implemented with an active load and a large signal network analyzer (LSNA) both under computer control for adaptive tuning. The technique is demonstrated on both a GaN HEMT and a 65 nm NMOS transistor operating in class-B to quantify the impact of memory effects in pulsed-IV/pulsed-RF operation compared to CW operation.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133686125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Closed-loop nonlinear modeling of ∑Δ fractional-N frequency synthesizers","authors":"H. Hedayati, B. Bakkaloglu","doi":"10.1109/ARFTG.2007.8376229","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376229","url":null,"abstract":"Nonlinear, time-varying nature of synthesizer building blocks such as phase frequency detectors (PFD), charge pump and frequency dividers can increase close-in phase noise and enhance spurious tones due to intermodulation of high frequency quantization noise and tonal content; therefore, an accurate simulation model is critical for successful implementation of loop parameters and bandwidth widening techniques. In this paper inherent non-uniform sampling of the PFD is modeled through an event-driven dual-iteration based technique. The proposed technique generates a vector of piece-wise linear time-voltage pairs, defining the VCO control voltage. A flexible third-order ∑Δ modulated RF synthesizer core with integrated loop filter and LC-tank VCO is designed and fabricated in 0.13-μm CMOS process in order to validate the technique experimentally. The proposed modeling technique was able to predict in-band spur power levels with 1.8 dB accuracy, and spur frequency offsets with lower than 400Hz accuracy with several programmable non-idealities enabled.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123200844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evaluation of the VNA verification process based on the normalized errors","authors":"Y. Lee","doi":"10.1109/ARFTG.2007.8376230","DOIUrl":"https://doi.org/10.1109/ARFTG.2007.8376230","url":null,"abstract":"Verification kits are used as common tools for demonstrating measurement traceability of a Vector Network Analyzer (VNA), and for verifying the process control of the routine calibrations or inter-laboratory comparison. Such measurements performed by a national metrology lab or a secondary cal lab are very accurate due to the tremendous advancement of modern vector network analyzers. An inter-laboratory comparison of verification kits was established and is currently managed by the ARFTG. A robust statistical tool was used to improve the accuracy of the comparison by excluding outliers from the cumulative data of various participants. A statistical bound based on the median of absolute deviation (MAD) provide an evaluation method for the users in determining the pass or fail of their measurements. In this paper, a normalized error method and also z-score procedure are both discussed for their applicability as pass/fail criteria. Finally examples using the normalized error method, which is highly utilized by the metrology community, will be presented. A numeric metric encompassing the interpretation of results will be provided.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133156542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}