用于等温器件表征的低成本脉冲RF & I-V测量装置

M. Marchetti, K. Buisman, M. Pelk, L. Smith, L. D. de Vreede
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引用次数: 7

摘要

提出了一种低成本、高通用性的脉冲射频-脉冲I-V等温器件表征装置。所实现的装置将综合仪器、高动态范围脉冲网络分析仪与脉冲I-V测量相结合。由此产生的配置有助于在大范围的偏置和脉冲条件下非常准确地表征低功率和高功率器件。报告了实现的系统精度,并通过LDMOS器件和玻璃上硅VDMOS的自热效应的表征强调了其测量能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-cost pulsed RF & I-V measurement setup for isothermal device characterization
A low-cost, highly versatile, pulsed RF — pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.
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