M. Marchetti, K. Buisman, M. Pelk, L. Smith, L. D. de Vreede
{"title":"A low-cost pulsed RF & I-V measurement setup for isothermal device characterization","authors":"M. Marchetti, K. Buisman, M. Pelk, L. Smith, L. D. de Vreede","doi":"10.1109/ARFTG.2007.8376175","DOIUrl":null,"url":null,"abstract":"A low-cost, highly versatile, pulsed RF — pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.","PeriodicalId":199632,"journal":{"name":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 70th ARFTG Microwave Measurement Conference (ARFTG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2007.8376175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A low-cost, highly versatile, pulsed RF — pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.