用于器件表征的射频去嵌入方法研究

T. O'Sullivan, P. Asbeck
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引用次数: 3

摘要

用于表征和建模的器件测量通常在晶圆上进行,器件嵌入在探测盘架上。为了准确地表示器件性能,需要从直流和射频测量中去除与这些板框相关的寄生元件。本文分析了各种射频去嵌入技术在不同板架类型和尺寸下的有效性。在Open-Short和TRL去嵌入技术中,期望的和去嵌入的DUT s参数与频率之间的差异被显示出来,并得出结论,哪种去嵌入技术更适合给定的板框尺寸和测量频率范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of RF de-embedding approaches for device characterization
Device measurements for characterization and modeling are typically performed on wafer with the devices embedded in a probing padframe. The parasitic elements associated with these padframes need to be removed from both the DC and RF measurements for accurate representation of the device performance. In this paper the effectiveness of various RF de-embedding techniques is analyzed for various padframe types and sizes. The difference between desired and de-embedded DUT S-parameters versus frequency is shown for both the Open-Short and TRL de-embedding techniques, and conclusions are made as to which de-embedding technique is more appropriate for a given padframe size and measurement frequency range.
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