采用改进的冷场效应法测定GaN和SiC封装晶体管的栅极电阻和电感

2007 70th ARFTG Microwave Measurement Conference (ARFTG) Pub Date : 2007-11-01 DOI:10.1109/ARFTG.2007.8376232

A. Z. Landa, J. E. Zuniga-Juarez, J. Reynoso‐Hernández, M. C. Maya‐Sanchez, J. D. del Valle-Padilla, J. R. Loo-Yau

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引用次数: 10

摘要

近年来，提出了一种计算硅片上AlGaN/GaN hemt栅极电阻和电感的新方法。本文在市售的封装功率GaN hemt (CHG35015)和功率SiC mesfet (CRF24010f)上研究了上述方法的性能，用于确定等效电路模型的Rg和Lg。实验结果表明，GaN HEMT和SiC MESFET的冷态场效应管Zjj参数匹配良好，证实了该方法的通用性。

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An investigation on the modified cold-fet method for determining the gate resistance and inductance of the packaged GaN and SiC transistors

Recently, a new method for calculating gate resistance and inductance of on-wafer AlGaN/GaN HEMTs was presented. In this paper the performance of the method mentioned before is investigated on commercially available packaged power GaN HEMTs (CHG35015) and power SiC MESFETs (CRF24010f for the determination of Rg and Lg of the equivalent circuit model. Experimental results show very good Zjj parameter match of the cold FET of the GaN HEMT and SiC MESFET and confirm the generality of the method.

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2007 70th ARFTG Microwave Measurement Conference (ARFTG)

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