Microelectronic Engineering最新文献_第2页

A simulation study of grayscale ice lithography for spiral phase plates in near infrared wavelengths

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-26 DOI: 10.1016/j.mee.2024.112308

Kangping Liu , Jinyu Guo , Shuoqiu Tian , Wentao Yuan , Ding Zhao , Rui Zheng , Yifang Chen , Min Qiu

{"title":"A simulation study of grayscale ice lithography for spiral phase plates in near infrared wavelengths","authors":"Kangping Liu , Jinyu Guo , Shuoqiu Tian , Wentao Yuan , Ding Zhao , Rui Zheng , Yifang Chen , Min Qiu","doi":"10.1016/j.mee.2024.112308","DOIUrl":"10.1016/j.mee.2024.112308","url":null,"abstract":"<div><div>Grayscale electron beam lithography (EBL) in amorphous solid water (ASW), known as ice lithography (IL), and in Polymethylmethacrylate (PMMA), respectively, for spiral phase plates (SPPs) are numerically simulated by using commercial software: Beamer, Tracer and Lab, aiming at characterizing the two lithography methods for three-dimensional nanostructures. It is found that IL is able to generate 3D SPP profiles with smoother surface than conventional EBL. Further simulation using finite difference time domain (FDTD) method is also conducted to investigate the effect of the surface roughness on the wavefront characteristics of the transformed vortex beams. Clear influence on the light regulation ability by surface roughness is found through comparison between ASW-based and PMMA-based SPPs, indicating that IL has better performance than conventional EBL in patterning 3D SPP structures. This research indicates that IL should be prospective for manufacturing high-quality micro and nanostructures with 3D profiles for modern optical devices.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112308"},"PeriodicalIF":2.6,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiple Aztec steps as an angle resolved micro-spectrometer by grayscale ice lithography

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-25 DOI: 10.1016/j.mee.2024.112309

Jinyu Guo , Kangping Liu , Shuoqiu Tian , Wentao Yuan , Hao Quan , Qiucheng Chen , Qingxin Wu , Rui Zheng , Ding Zhao , Yifang Chen , Min Qiu

{"title":"Multiple Aztec steps as an angle resolved micro-spectrometer by grayscale ice lithography","authors":"Jinyu Guo , Kangping Liu , Shuoqiu Tian , Wentao Yuan , Hao Quan , Qiucheng Chen , Qingxin Wu , Rui Zheng , Ding Zhao , Yifang Chen , Min Qiu","doi":"10.1016/j.mee.2024.112309","DOIUrl":"10.1016/j.mee.2024.112309","url":null,"abstract":"<div><div>For decades, Aztec steps have been widely attained because of the potential application as an angle-resolved micro-spectroscope. However, the challenge in replicating multiple steps with less than 1 nm precision hinders the Aztec steps to be commercialized. Although grayscale electron beam lithography (G-EBL) on PMMA (polymethyl methacrylate) has been tried but the surface roughness as well as the flatness still remains a big issue. This work evaluates the grayscale e-beam lithography in amorphous solid water (ASW), nicknamed as ice lithography, for Aztec steps by numerical simulation based on Monte Carlo algorithm. For comparison, grayscale electron beam lithography in PMMA was included in the simulation. Furthermore, simulation using finite difference and time domain (FDTD) method was also carried out to theoretically characterize the angle-resolved spectra by the numerically modeled Aztec steps in ASW and PMMA, respectively. Our results show that grayscale ice lithography on ASW is able to replicate Aztec steps with much smother surface and better flatness than that on PMMA, giving rise to significantly improved spectral resolution.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112309"},"PeriodicalIF":2.6,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance copper-seed-layer deposition using 60-MHz high-frequency–direct current superimposed magnetron sputtering

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-20 DOI: 10.1016/j.mee.2024.112307

Byeong Hwa Jeong , Dong Woo Kim , Da Hee Park , Shin Kim , Yong Seok Jang , Yasuyuki Taura , Yutaka Kokaze , Sang Ho Lee , Geun Young Yeom

{"title":"High-performance copper-seed-layer deposition using 60-MHz high-frequency–direct current superimposed magnetron sputtering","authors":"Byeong Hwa Jeong , Dong Woo Kim , Da Hee Park , Shin Kim , Yong Seok Jang , Yasuyuki Taura , Yutaka Kokaze , Sang Ho Lee , Geun Young Yeom","doi":"10.1016/j.mee.2024.112307","DOIUrl":"10.1016/j.mee.2024.112307","url":null,"abstract":"<div><div>This study aims to demonstrate the deposition of high-performance Cu-seed layers using a very high frequency–direct current (VHF–DC) superimposed magnetron sputtering system for sub-20-nm dual-damascene interconnects. Plasma diagnostics revealed substantial improvements in plasma properties with electron densities measured at <em>n</em><sub><em>e</em></sub> ≈ 1.71 × 10<sup>16</sup> m<sup>−3</sup> for 40.68 MHz VHF–DC, and <em>n</em><sub><em>e</em></sub> ≈ 1.63 × 10<sup>17</sup> <!-->m<sup>−3</sup> for 60 MHz VHF–DC. These enhancements enabled superior step coverage and thin-film uniformity, particularly in high-aspect-ratio structures, achieving a bottom-to-top coverage ratio exceeding 100 % at an RF bias of 200 W. Comparative analysis using X-ray diffraction and X-ray photoelectron spectroscopy showed that Cu<img>Mn films deposited via VHF–DC superimposed sputtering exhibited improved Cu (111) crystallinity, reduced void formation, and enhanced adhesion compared to conventional DCMS. These findings reveal VHF–DC superimposed sputtering as a critical technological advancement, offering enhanced process reliability and scalability for next-generation semiconductor devices.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112307"},"PeriodicalIF":2.6,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Etching of tungsten via a combination of thermal oxide formation and wet-chemical oxide dissolution

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-18 DOI: 10.1016/j.mee.2024.112304

Antoine Pacco , Teppei Nakano , Jana Loyo Prado , Ju-Geng Lai , Hikaru Kawarazaki , Efrain Altamirano Sanchez

{"title":"Etching of tungsten via a combination of thermal oxide formation and wet-chemical oxide dissolution","authors":"Antoine Pacco , Teppei Nakano , Jana Loyo Prado , Ju-Geng Lai , Hikaru Kawarazaki , Efrain Altamirano Sanchez","doi":"10.1016/j.mee.2024.112304","DOIUrl":"10.1016/j.mee.2024.112304","url":null,"abstract":"<div><div>In this work, an etching process for the controlled and partial recess of tungsten metal was developed. The process comprises two steps which can be repeated: a thermal oxidation of the tungsten followed by the oxide dissolution in an acidic or basic solution. During the first step the W metal is heated in the presence of O<sub>3</sub> gas in the temperature range of 210–290 °C forming a WO<sub>3</sub> oxide. During the second step this thermally grown oxide is then selectively dissolved towards the underlying W metal. Both NH<sub>4</sub>OH and H<sub>3</sub>PO<sub>4</sub> were down selected as the best wet chemical dissolution agents in terms of dissolution rate and selectivity. By utilizing this combined thermal/wet-chemical cyclic etch process, the total W recess can be tuned on the nanoscale based on oxidation temperature and total number of cycles. This process was then applied for the deep recess (∼180 nm) of narrow (∼20 nm) tungsten trenches for the fabrication of the bottom contacts in complementary field-effect transistors (CFET).</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112304"},"PeriodicalIF":2.6,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaN radiofrequency components and power amplifiers for next-generation 5G communications

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-16 DOI: 10.1016/j.mee.2024.112305

Muhammad Bilal Yaseen , Fayu Wan , Fareeha Siddique , Atul Thakur

{"title":"GaN radiofrequency components and power amplifiers for next-generation 5G communications","authors":"Muhammad Bilal Yaseen , Fayu Wan , Fareeha Siddique , Atul Thakur","doi":"10.1016/j.mee.2024.112305","DOIUrl":"10.1016/j.mee.2024.112305","url":null,"abstract":"<div><div>This review article provides a thorough analysis of recent progress in Gallium Nitride radio frequency components and power amplifiers, highlighting their essential contributions to the advancement of fifth-generation communication systems. Over the last two decades, Gallium Nitride High Electron Mobility Transistors have been at the cutting edge of technological development, demonstrating significant advancements and their crucial role in silicon substrate applications for radio frequency power. These advancements underscore the transformative impact and continued importance of Gallium Nitride technologies in enhancing performance and efficiency in modern communication systems. This review evaluates various material structures, device architectures, and fabrication techniques, detailing their impact on enhancing power density and efficiency within 5G systems. Key findings include effective methodologies for mitigating RF leakage from substrates and interfaces, which are vital for sustaining high power density and efficiency. Noteworthy progress in the L-band demonstrates significant improvements in output power and power-added efficiency, highlighting GaN technology's transformative potential in wireless communications. This review integrates critical insights into the current state of GaN RF technology and provides a forward-looking perspective on the challenges and future directions necessary to fully exploit GaN's capabilities for 5G network applications.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112305"},"PeriodicalIF":2.6,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the time series analysis of resistive switching devices

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-16 DOI: 10.1016/j.mee.2024.112306

Parth S. Thorat , Dhananjay D. Kumbhar , Ruchik D. Oval , Sanjay Kumar , Manik Awale , T.V. Ramanathan , Atul C. Khot , Tae Geun Kim , Tukaram D. Dongale , Santosh S. Sutar

{"title":"On the time series analysis of resistive switching devices","authors":"Parth S. Thorat , Dhananjay D. Kumbhar , Ruchik D. Oval , Sanjay Kumar , Manik Awale , T.V. Ramanathan , Atul C. Khot , Tae Geun Kim , Tukaram D. Dongale , Santosh S. Sutar","doi":"10.1016/j.mee.2024.112306","DOIUrl":"10.1016/j.mee.2024.112306","url":null,"abstract":"<div><div>Resistive switching (RS) based memory or memristive devices have emerged as promising candidates for resistive random-access memory (RRAM) and neuromorphic computing applications. However, the integration of RS devices into commercial production faces significant challenges due to substantial variations in RS parameters, which include cycle-to-cycle (C2C) and device-to-device (D2D) fluctuations. In this context, we propose a multivariate time series analysis framework to investigate the variability exhibited by RS devices. We present a detailed description of the statistical methodology and procedures for conducting both univariate and multivariate time series analysis, along with recommended tests and protocols. Specifically, we focus on utilizing Ti<sub>3</sub>C<sub>2</sub> MXene oxide-based RS devices as a case study for this analysis. Our findings reveal that employing the multivariate method yields superior prediction results compared to the univariate approach. This conclusion is based on our observation that the Vector Autoregressive Moving Average (VARMA) model, which concurrently considers multiple variables (V<sub>SET</sub> and V<sub>RESET</sub>), more effectively explains a larger portion of the variability in the data compared to the univariate model. This underscores the importance of considering multiple factors simultaneously, as it provides a more comprehensive understanding of the underlying patterns within the dataset, thereby enhancing the accuracy of predictions. Consequently, we advocate for adopting the multivariate approach due to its ability to capture the complexity and interactions inherent in the dataset, resulting in enhanced model performance. The proposed model demonstrated superior performance in capturing the variability present in V<sub>SET</sub> and V<sub>RESET</sub> data, thereby producing the most optimal outcomes.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112306"},"PeriodicalIF":2.6,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metallurgical reactions and high-temperature long-term reliability of the Sn-2.3Ag flip-chip solder bump Sn-2.3Ag倒装焊点的冶金反应和高温长期可靠性

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-29 DOI: 10.1016/j.mee.2024.112293

Eun-Su Jang, Jeong-Won Yoon

{"title":"Metallurgical reactions and high-temperature long-term reliability of the Sn-2.3Ag flip-chip solder bump","authors":"Eun-Su Jang, Jeong-Won Yoon","doi":"10.1016/j.mee.2024.112293","DOIUrl":"10.1016/j.mee.2024.112293","url":null,"abstract":"<div><div>Flip-chip bonding technology has been extensively applied in the semiconductor packaging field given the recent increase in demand for electronic products requiring miniaturization and high performance. In this study, a high-temperature long-term reliability evaluation was performed to evaluate the metallurgical reaction and mechanical properties at the Sn-2.3Ag (wt%) flip-chip solder bump joints. Isothermal aging was performed for up to 2000 h at 150 °C. A Ni<sub>3</sub>Sn<sub>4</sub> intermetallic compound (IMC) was formed at the interface of the solder joints, and the thickness of the IMC layer increased as the isothermal aging time increased; however, the thickness of Ni under bump metallization (Ni UBM) layer was decreased during the growth of the IMC. Linear regression analysis showed that the growth thickness of the IMC layer and the consumption thickness of the Ni UBM layer varied linearly as functions of the square root of the isothermal aging time. Based on this analysis, the growth rate constant of the IMC layer and consumption rate constant of the Ni UBM layer were 0.000756 and 0.000303 μm/s<sup>1/2</sup>, respectively. Thereafter, shear tests were performed to evaluate the mechanical properties of the solder joints. As the isothermal aging time increased, the variation of shear strength was not large. However, the shear strength decreased slightly and then remained constant. As a result of the analysis of the fractured surface, most conditions exhibited ductile fracture behavior inside the solder bump, while in the case of specimens isothermally aged for 500, 1000, 1500, and 2000 h, cratering occurred. By observing the changes in the fracture mode, the ductile fracture behavior became less prominent, and the occurrence of cratering tended to become more prominent as the isothermal aging time increased.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112293"},"PeriodicalIF":2.6,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142746270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformity in physical vapor deposition 模拟和优化反应器气流和磁场，提高物理气相沉积过程中的薄膜均匀性

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-26 DOI: 10.1016/j.mee.2024.112294

Yongshuan Wu , Kefan Liu , Pengcheng She , Junhui Li

{"title":"Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformity in physical vapor deposition","authors":"Yongshuan Wu , Kefan Liu , Pengcheng She , Junhui Li","doi":"10.1016/j.mee.2024.112294","DOIUrl":"10.1016/j.mee.2024.112294","url":null,"abstract":"<div><div>Planar magnetron sputtering reactors are widely utilized in the semiconductor industry due to their high deposition rate, low substrate temperature, and capability for large-area coating. Careful control of the reactor's flow field and magnetic field is essential to ensure appropriate thickness uniformity of the thin film and uniform etching of the target. Utilizing finite element analysis software, simulations were conducted to obtain numerical solutions for the airflow and magnetic field. An increase in the inlet diameter from 4 mm to 5 mm resulted in a 63.4 % decrease in the gas distribution unevenness coefficient. Conversely, increasing the outlet diameter from 1 mm to 2 mm led to a 636.6 % increase in the coefficient. At a pitch of 11.7 mm, the horizontal magnetic field component on the target surface peaked at 0.24 T, covering a larger area. A dual-runway structure reduced the circumferential component of the horizontal magnetic field by more than half. Analysis of the results precipitated the optimization of key component structures, resulting in an optimal solution: an air ring diameter of 5 mm, an outlet diameter of 1 mm, outlet spacing of 12 mm, double inlets, and 38 outlets on each side of the air ring. Further optimization determined the optimal magnet-to-target surface spacing of 11.7 mm, with the dual-runway structure effectively improving the uniformity of the radial magnetic field distribution and increasing the target etching area. This study provides a theoretical basis for optimizing planar magnetron sputtering reactors.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112294"},"PeriodicalIF":2.6,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142722999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of DC bias and fast-rise pulse voltage on delayed impact ionization in a silicon diode structure

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-22 DOI: 10.1016/j.mee.2024.112292

Alexey F. Kardo-Sysoev , Maksim N. Cherenev , Alexander G. Lyublinsky , Shaira A. Yusupova , Elena I. Belyakova , Mikhail I. Vexler

引用次数: 0

High inductance 3D arch inductor based on non-photosensitive polyimide 基于非光敏聚酰亚胺的高电感三维拱形电感器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-20 DOI: 10.1016/j.mee.2024.112291

Zepeng Wang , Qianzhen Su , Chao Zhang , Bo Zhang , Xiaolong Wen , Haoyuan Zhao , Dandan Liu , Jingliang Li , Jianhua Li

{"title":"High inductance 3D arch inductor based on non-photosensitive polyimide","authors":"Zepeng Wang , Qianzhen Su , Chao Zhang , Bo Zhang , Xiaolong Wen , Haoyuan Zhao , Dandan Liu , Jingliang Li , Jianhua Li","doi":"10.1016/j.mee.2024.112291","DOIUrl":"10.1016/j.mee.2024.112291","url":null,"abstract":"<div><div>Due to their low parasitic capacitance, minimal substrate losses, and high inductance values, three-dimensional MEMS inductors are increasingly used in microelectronics applications, such as MEMS sensors, RF MEMS, and energy storage devices. Conventional fabrication techniques, including UV-LIGA lithography and through‑silicon vias (TSV), are commonly employed to create high-aspect-ratio structures for 3D inductors. However, these processes are often complex and challenging. To simplify the process, we proposed a novel fabrication method for arched inductors utilizing non-photosensitive polyimide. The high viscosity of polyimide facilitates the formation of sloped sidewalls during development, eliminating the need for high-aspect-ratio structures in the inductor fabrication. By controlling the development time, we achieve the desired polyimide sidewall morphology. Additionally, to achieve high inductance, a high-permeability Co-based amorphous alloy wire was used as the magnetic core of the inductor. The maximum inductance of the inductor can reach 1710 nH at an excitation frequency of 71.4 MHz.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112291"},"PeriodicalIF":2.6,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0