Microelectronic Engineering最新文献

{"title":"The role of etching gas purity in C4F8/Ar plasma to optimize SiO2 etching process","authors":"Anhan Liu ,&nbsp;Shijun Yu ,&nbsp;Shingo Nakamura ,&nbsp;Akinari Sugiyama ,&nbsp;Takashi Nishikawa ,&nbsp;Dongwei Xu ,&nbsp;Xiao Jin ,&nbsp;Daixuan Wu ,&nbsp;He Tian","doi":"10.1016/j.mee.2025.112353","DOIUrl":"10.1016/j.mee.2025.112353","url":null,"abstract":"<div><div>The relentless miniaturization of critical feature sizes in integrated circuits has set increasingly stringent demands on the precision of via etching processes. Current research predominantly focuses on the development of gases and optimization of processes. However, the role of etching gas purity and the impact of gas impurities have not yet been the subject of dedicated studies. Here, the etching behavior of silicon dioxide using two different purities of etching gases is investigated, examining the etching rate and morphology of SiO₂ films under identical etching parameters. Compared to 99.999 % purity, the 99.99999 % purity C₄F₈ gas achieves a more stable and uniform etching rate with sidewall angles of 86.6° (closer to a 90° angle). This is primarily attributed to the reduction of etch-active impurities in the C₄F₈ gas, which decreases etching variability and minimizes damage to the sidewall fluorocarbon protective layer. Our research provides theoretical and experimental support for the advancement of subsequent etching simulation studies and the application of high-purity etching gases.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112353"},"PeriodicalIF":2.6,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143899199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TCAD simulations of radiation damage in 4H-SiC","authors":"Jürgen Burin,&nbsp;Christopher Hahn,&nbsp;Philipp Gaggl,&nbsp;Andreas Gsponer,&nbsp;Simon Waid,&nbsp;Thomas Bergauer","doi":"10.1016/j.mee.2025.112352","DOIUrl":"10.1016/j.mee.2025.112352","url":null,"abstract":"<div><div>In this paper we present simulation based radiation damage modeling of 4H silicon carbide (SiC) using the technology computer aided design (TCAD) tools for up to 1 kV forward and backward bias. After verifying the TCAD framework from Global TCAD Solutions (GTS) against Sentaurus simulations for silicon we use it to approximate measurements of neutron-irradiated 4H-SiC particle detectors, i.e., pin-diodes. Based on our simulations we are not only able to evaluate the accuracy of the predictions but also to provide an explanation for the almost negligible current of radiated devices under high forward bias.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112352"},"PeriodicalIF":2.6,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Methodology for data retrieval of MRAM: Technological analysis, sample preparation and internal electrical measurements","authors":"Louise Dumas ,&nbsp;Christina Villeneuve-Faure ,&nbsp;François Marc ,&nbsp;Hélène Fremont ,&nbsp;Guillaume Bascoul ,&nbsp;Christophe Guerin","doi":"10.1016/j.mee.2025.112351","DOIUrl":"10.1016/j.mee.2025.112351","url":null,"abstract":"<div><div>This paper presents the methodology to be applied in order to achieve the data retrieval of any magneto-resistive random access memory (MRAM) on the market, whether it's a Toggle MRAM or a STT-MRAM. This methodology consists of four stages: theoretical study of the structure, technological analysis to identify the physical structure of the memory, preparation of the memory to make the data accessible, and readout of those data.</div><div>Knowing the structural elements and how the MRAM is read/written allows the possibility to do its technological analysis. Then, this analysis allows the identification of the magnetic tunnel junction (MTJ), where the data (‘0’ / ‘1’) is stored as resistance states, and of its surroundings, mainly the bitline. Once this is done, a complex preparation of the device's backside is achieved to expose both sides of the MTJ: one side to apply the voltage and the other to collect the current. The sample preparation methodology consists of a chemical opening, a polishing down to the transistors, focused ion beam (FIB) etches of metallization levels surrounding the MTJ and metal deposition. Finally, the memory can be read by techniques derived from atomic force microscopy (AFM). For both memory types, the discrimination of the bit states is proved by conductive AFM (C-AFM).</div><div>This work demonstrates that it is possible to retrieve data stored in a Toggle MRAM (130 nm technology node) and in a STT-MRAM (40 nm technology node) using invasive techniques. These components thus represent the two types of MRAM on the market, with classical and more advanced technology nodes. The data readout validates the sample preparation flow.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112351"},"PeriodicalIF":2.6,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143873883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications","authors":"Reshma Ravindran,&nbsp;Ahmed M. Massoud","doi":"10.1016/j.mee.2025.112348","DOIUrl":"10.1016/j.mee.2025.112348","url":null,"abstract":"<div><div>High-efficiency power electronic converters are imperative for future applications aiming to meet sustainability goals, as increased efficiency translates to reduced energy consumption. The emerging wide bandgap technology is a key enabler, offering better efficiency, power density, switching speed, and reduced size and weight. In view of this, we present an extensive overview of wide bandgap and ultra-wide bandgap devices for present &amp; next-generation power electronics applications. The electrical characteristics of these devices are compared in this article, along with their present state and projected future developments. The current status of wide bandgap and ultra-wide bandgap devices' applicability for a wide range of emerging power electronics application areas, including solid-state transformers, data centers, ultra-fast electric vehicle charging stations, renewable energy generation, energy storage systems, solid-state circuit breakers, military electronic warfare systems, graphics processing units, quantum computers, and 6G networks, is reviewed. Furthermore, the expectations for these devices for the future of each of these applications are assessed, and the related future challenges and opportunities are discussed. The study shows that while SiC semiconductors will continue to dominate in high-power, high-voltage applications like transportation, grid-side converters, solid-state transformers, and renewable energy integration, GaN semiconductors will be crucial for low-voltage, high-frequency applications such as consumer electronics, power supplies, and data centers. Although not yet commercialized, ultra-wide bandgap devices like Diamond, and <span><math><mi>β</mi><mo>−</mo><msub><mi>Ga</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></math></span>, with their exceptional material properties, are projected to be indispensable for high-power, high-frequency power electronics applications.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112348"},"PeriodicalIF":2.6,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143815171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A multi-user wearable waistband system for real-time health monitoring of respiration, ECG, and body temperature","authors":"Siyuan Wang ,&nbsp;Ming Dong ,&nbsp;Jiang He ,&nbsp;Guancheng Wu ,&nbsp;Xiang Li ,&nbsp;Xiaojun Pan ,&nbsp;Jiansheng Wu ,&nbsp;Rongrong Bao ,&nbsp;Caofeng Pan","doi":"10.1016/j.mee.2025.112346","DOIUrl":"10.1016/j.mee.2025.112346","url":null,"abstract":"<div><div>Wearable health monitoring systems have gained significant attention for real-time physiological signal tracking, particularly in elderly care settings where continuous, non-invasive monitoring is critical. Current systems, however, face limitations in multi-signal integration, user comfort, and practicality for long-term use. Existing approaches often rely on separate devices for measuring vital signs, leading to cumbersome setups and restricted mobility. Additionally, few solutions support simultaneous multi-user monitoring, hindering scalability in group care environments like nursing homes. In this study, we present a highly integrated waistband device that addresses these gaps by concurrently measuring respiration, electrocardiogram (ECG), and body temperature. The respiratory sensor employs a resistive pressure sensor. Its alignment with the ECG electrodes and the temperature sensor eliminates the need for auxiliary respiratory devices (e.g., masks) and enhances wearability. With the integration of a Bluetooth transmission circuit system, this real-time health monitoring system enables long-term stable testing for multiple users. A 24-h synchronized test involving 10 participants was conducted, demonstrating effective health monitoring capabilities and the potential to identify underlying health issues. This innovation provides a scalable, comfortable solution for intelligent healthcare systems, demonstrating practical value in elderly care applications.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112346"},"PeriodicalIF":2.6,"publicationDate":"2025-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143784069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The electronic and optical properties of the monolayer Mo(SxSe1-x)2 by the first-principle calculations","authors":"Chuan-Zhen Zhao,&nbsp;Tai-Ning Xu,&nbsp;Hui-Jing Hu","doi":"10.1016/j.mee.2025.112349","DOIUrl":"10.1016/j.mee.2025.112349","url":null,"abstract":"<div><div>First-principles calculations are conducted to explore the electronic and optical properties of the monolayer Mo(S_xSe_1-x)₂. It is found that the monolayer Mo(S_xSe_1-x)₂ possesses a direct bandgap. Through fitting the theoretical and experimental data, the bandgap bowing parameter of 0.051 eV is attained. The enlargement of the bandgap energy is by reason of the decline of the K VBM. In the full component range, the downward movements of the K CBM and the K VBM are dominated by the <span><math><msub><mi>p</mi><mrow><mi>S</mi><mo>−</mo><mn>3</mn><mi>p</mi></mrow></msub><mo>−</mo><msub><mi>d</mi><mrow><mi>Mo</mi><mo>−</mo><mn>4</mn><mi>d</mi></mrow></msub></math></span> coupling interaction and the total p-d coupling interaction, respectively. For the optical properties, it is found that increasing S component can reduce the static dielectric constant. However, the B and C excitons as well as E₃ shift toward the higher energy direction with increasing S component. It is also found that increasing S component has a small effect on enhancing the light absorption. The photoconductivity shows a similar result with the absorptivity.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112349"},"PeriodicalIF":2.6,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143777216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 0.324-THz transmitter based on individual 2.65 % efficiency x16 frequency multiplier chiplets for phased-array and PMF applications","authors":"Georg Zachl ,&nbsp;Christoph Mangiavillano ,&nbsp;Tim Schumacher ,&nbsp;Richard Hüttner ,&nbsp;Patrick Fath ,&nbsp;Christoph Wagner ,&nbsp;Andreas Stelzer ,&nbsp;Harald Pretl","doi":"10.1016/j.mee.2025.112344","DOIUrl":"10.1016/j.mee.2025.112344","url":null,"abstract":"<div><div>A 0.324-THz multiplier-based (x16) transmitter with an on-chip patch antenna for application in phased arrays and plastic microwave fiber links has been implemented in a 130-nm SiGe:C bipolar CMOS technology with an <span><math><msub><mi>f</mi><mi>T</mi></msub><mo>/</mo><msub><mi>f</mi><mi>max</mi></msub></math></span> of 350/450 GHz. The chiplet features integrated digitally programmable power management and biasing for post‑silicon optimization. Each radio frequency circuit block can be individually tuned by a bias current generator, and a total of three programmable voltage regulators supply the three bootstrapped doublers used from 20-to-160 GHz, the two-stage 160-GHz power amplifier and the 0.32-THz frequency doubler, respectively. After rigorous optimization, measurements reveal a single-chain dc-to-THz efficiency of 2.65 % with an output power up to 6.6 dBm at 0.324 THz. The dc power consumption was 170 mW. Operated in a 1-by-4 phased array, a maximum effective isotropic radiated power of 13.1 dBm with an output power of 2.9 dBm has been measured. Beam steering is demonstrated, revealing beam scanning over 22° in one plane. Used as a transmitter for plastic microwave fiber links, the on-chip antenna enables contactless coupling to the fiber, showing overall significantly reduced path losses compared to over-the-air links. A close-to-real-world demonstration of a PMF link with up to 3.25 Gbit/s using QPSK modulation is presented, using separate unsynchronized transmitter and receiver LO signal sources.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112344"},"PeriodicalIF":2.6,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing ferroelectric resistive switching via polar order engineering in Sm-doped BiFeO3 films","authors":"Biaohong Huang ,&nbsp;Yuxuan Jiang ,&nbsp;Jingyan Liu ,&nbsp;Yizhuo Li ,&nbsp;Qianhe Jin ,&nbsp;Qishuai Huang ,&nbsp;Tula R. Paudel ,&nbsp;Tom Wu ,&nbsp;Zhidong Zhang ,&nbsp;Weijin Hu","doi":"10.1016/j.mee.2025.112343","DOIUrl":"10.1016/j.mee.2025.112343","url":null,"abstract":"<div><div>Ferroelectric materials are promising for nonvolatile resistive memories due to their unique switchable diode effect. To improve the resistive switching performance, the fundamental correlation between the diode effect and the polar ordering should be unraveled. Here by the A-site substitution with Sm, we report the resistive switching in ferroelectric SrRuO₃/Sm_<em>x</em>Bi_1-<em>x</em>FeO₃ (<em>x</em> = 0, 0.1, 0.2)/Pt thin-film capacitors. We find that the ground state of BiFeO₃ changes from ferroelectric to antiferroelectric with increasing Sm substitution, which is accompanied by the fading of the resistive switching in Sm_0.2Bi_0.8FeO₃, illustrating the decisive role of polarization in resistive switching. Moreover, similar dynamics between polarization and resistance states supports the close link between the ferroelectric domain growth and the resistive switching. Our SrRuO₃/Sm_0.1Bi_0.9FeO₃/Pt device achieved a high on/off ratio of 10⁴ and fast switching speed of 6.25 ns, thanks to reduced leakage current from Sm doping while preserving ferroelectric properties. Our results thus provide a new approach to enhance the resistive memory performance of ferroelectric materials.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112343"},"PeriodicalIF":2.6,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143681859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method","authors":"P. Favia ,&nbsp;G. Eneman ,&nbsp;A. Veloso ,&nbsp;A. Nalin Mehta ,&nbsp;G.T. Martinez ,&nbsp;O. Richard ,&nbsp;A. Hikavyy ,&nbsp;P.P. Gowda ,&nbsp;F. Seidel ,&nbsp;G. Pourtois ,&nbsp;A. De Keersgieter ,&nbsp;E. Grieten","doi":"10.1016/j.mee.2025.112334","DOIUrl":"10.1016/j.mee.2025.112334","url":null,"abstract":"<div><div>Strain engineering is a common approach for enhancing the mobility of semiconductor materials and improving the performance of conventional and novel transistors. Understanding the strain distribution is important for optimizing device characteristics. Transmission electron microscopy (TEM) is a crucial technique for evaluating strain at the nanoscale. However, due to the ongoing reduction in electronic device dimensions, assessing strain via TEM has become increasingly challenging. Many different techniques have been developed in recent years with the aim of analysing complex structures. In this work, we investigate the capabilities of the recently developed Bessel beam electron diffraction (BBED) method to evaluate strain by TEM in fully processed fin-field effect transistor (FinFET) devices and in cutting edge nano-sheet complementary-FET (NS-CFET) technology.</div><div>TEM analysis of fully processed devices is challenging due to the presence of artefacts generated by different materials and multiple structures overlapping in projection in TEM images. We demonstrate the capability of the BBED technique to reveal strain in fully processed FinFET while exploring the dependence of strain on layout variations.</div><div>NS-CFETs are an attractive device architecture for beyond 1 nm logic technology nodes. Strain distribution in these devices is more complex than in FinFETs due to the presence of very thin layers and reduced channel dimensions. We compare the BBED method with the well-known techniques of nano-beam electron diffraction (NBED) and geometric phase analysis (GPA) for analysing strain in these structures. The BBED technique, despite a simple experimental setup, shows good accuracy and spatial resolution, being able to resolve interlayers thinner than 2 nm. Compared to NBED and GPA, the BBED technique offers better performance and is therefore a promising method to study strain in future transistor devices.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112334"},"PeriodicalIF":2.6,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AlGaN/GaN High electron Mobility Transistor (HEMT) based radio frequency power amplifiers for future wireless communication transmitters: Exciting prospects and challenges","authors":"J. Ajayan ,&nbsp;S. Sreejith","doi":"10.1016/j.mee.2025.112342","DOIUrl":"10.1016/j.mee.2025.112342","url":null,"abstract":"<div><div>The power amplifiers (PAs) are indispensable for maintaining that both space and terrestrial transmitters fulfill the rigorous requirements for power consumption and, consequently, efficiency. Since solid-state PAs based on GaN HEMTs may offer the efficiency and power density performance to make them a feasible choice for space-borne active antennas, their availability is what propels integration for the satellite transmitters. Gain, output power (P_out), bandwidth (BW), drain efficiency (DE), chip area, peak-to-average-power ratio (PAPR) and power added efficiency (PAE) are the key metrics usually used for measuring the performance of PAs. This article deals with the exciting prospects and challenges in the design and manufacturing of GaN-HEMT based RF-PAs. Doherty PAs are most popular among various PA architectures and they have recorded a maximum gain of over 30 dB, PAPR of over 11.5, PAE of over 81 % and an operating frequency of over 29 GHz. Other GaN HEMT based PAs have been reported a maximum operating frequency of over 192 GHz (using 100 nm GaN HEMT), gain of over 35 dB, and a P_out of over 282 W. This article also highlights the various techniques for enhancing the broadband operation of GaN HEMT based PAs.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112342"},"PeriodicalIF":2.6,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143593026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}