Microelectronic Engineering最新文献_第2页

Improving electrical performance and reliability of stacked SiGe/Si FinFETs using O3 passivation for I/O devices 使用O3钝化I/O器件提高堆叠SiGe/Si finfet的电气性能和可靠性

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-09-04 DOI: 10.1016/j.mee.2025.112400

Jiayi Zhang , Huaizhi Luo , Haoyan Liu , Fei Zhao , Yongliang Li

{"title":"Improving electrical performance and reliability of stacked SiGe/Si FinFETs using O3 passivation for I/O devices","authors":"Jiayi Zhang , Huaizhi Luo , Haoyan Liu , Fei Zhao , Yongliang Li","doi":"10.1016/j.mee.2025.112400","DOIUrl":"10.1016/j.mee.2025.112400","url":null,"abstract":"<div><div>In this work, O<sub>3</sub> passivation technology for the novel stacked SiGe/Si FinFET input-output (I/O) devices was investigated. First, the O<sub>3</sub> passivation technology was validated based on SiGe MOS capacitance (CAP) structure., with results indicating that interface state density (D<sub>it</sub>) can be reduced to 5.12 × 10<sup>12</sup> eV<sup>−1</sup> cm<sup>−2</sup>. Then, to improve the electrical performance of the stacked SiGe/Si FinFET I/O device, the O<sub>3</sub> passivation technology was introduced between the SiGe/Si fin and gate oxide. As a result, the electrical performance for the stacked SiGe/Si FinFET I/O device was significantly improved. For example, SS could be reduced from the 168 mV/dec to 113 mV/dec, and g<sub>m</sub> could be improved from the 62 μS to 94 μS, which was mainly attributed to the O<sub>3</sub> passivation resulting in the reduction of D<sub>it</sub>. Furthermore, its reliability assessment was also performed. The result confirmed that threshold voltage (V<sub>TH</sub>) drift under negative bias temperature instability (NBTI) and hot carrier injection (HCI) stress were improved by 52.1 % and 60.3 %, respectively. Meanwhile, its maximum operating voltage (V<sub>max</sub>) for a 10 years lifetime at a failure rate of 0.01 % could reach to 2.65 V. Therefore, the O<sub>3</sub> passivation process is practical for the stacked SiGe/Si I/O FinFET device in advanced GAA platforms.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"301 ","pages":"Article 112400"},"PeriodicalIF":3.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144988600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Low-noise and high-power AlN/GaN MIS-HEMTs on silicon for mm-wave low-voltage applications 用于毫米波低压应用的低噪声和高功率AlN/GaN miss - hemt

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-09-03 DOI: 10.1016/j.mee.2025.112402

Jing Yuan , Xiaojuan Chen , Yichuan Zhang , Ying Luo , Binhao Guo , Ke Wei , Yankui Li , Weijun Luo , Weichao Wu , Sen Huang

{"title":"Low-noise and high-power AlN/GaN MIS-HEMTs on silicon for mm-wave low-voltage applications","authors":"Jing Yuan , Xiaojuan Chen , Yichuan Zhang , Ying Luo , Binhao Guo , Ke Wei , Yankui Li , Weijun Luo , Weichao Wu , Sen Huang","doi":"10.1016/j.mee.2025.112402","DOIUrl":"10.1016/j.mee.2025.112402","url":null,"abstract":"<div><div>The SiN<sub>x</sub>/AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on silicon have been fabricated for low-supply-voltage applications. The devices, featuring a gate length (<em>L</em><sub>g</sub>) of approximately 140 nm, exhibited excellent DC characteristics: a contact resistance (<em>R</em><sub>c</sub>) of 0.24 Ω·mm, a maximum saturated drain current (<em>I</em><sub>dmax</sub>) of 1.86 A/mm at a gate voltage (<em>V</em><sub>gs</sub>) of 2 V, an on-resistance (<em>R</em><sub>on</sub>) of 1.4 Ω·mm, and a peak transconductance (<em>Gm</em><sub>max</sub>) of 466 mS/mm at a drain voltage (<em>V</em><sub>ds</sub>) of 6 V. In RF measurements, the devices achieved ultra-low minimum noise figure (<em>NF</em><sub>min</sub>) of 0.54 (0.66) dB at <em>V</em><sub>ds</sub> of 5 (6) V at 30 GHz, along with a good two-tone linearity, the ratio of output third-order intercept point (<em>OIP</em><sub>3</sub>) to direct current output power (<em>P</em><sub>dc</sub>), denoted as <em>OIP</em><sub>3</sub>/<em>P</em><sub>dc</sub> is 12.4 (9.9) dB at <em>V</em><sub>ds</sub> of 5 (6) V. Pulsed-wave (PW) power measurements indicated the devices have both high output power (<em>P</em><sub>out</sub>) of 1.1 (1.6) W/mm and power-added efficiency (PAE) of 50.2 (49.4 %) at <em>V</em><sub>ds</sub> of 5 (6) V. These results demonstrate the SiN<sub>x</sub>/AlN/GaN MIS-HEMTs on silicon have promising potential in low-supply-voltage mm-wave low-noise and high-power applications.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"302 ","pages":"Article 112402"},"PeriodicalIF":3.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145047638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Towards silicon carbide monolithic active pixel radiation sensors 面向碳化硅单片有源像素辐射传感器

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-09-02 DOI: 10.1016/j.mee.2025.112386

Sebastian Onder, Jürgen Burin, Philipp Gaggl, Andreas Gsponer, Thomas Bergauer, Simon Waid

{"title":"Towards silicon carbide monolithic active pixel radiation sensors","authors":"Sebastian Onder, Jürgen Burin, Philipp Gaggl, Andreas Gsponer, Thomas Bergauer, Simon Waid","doi":"10.1016/j.mee.2025.112386","DOIUrl":"10.1016/j.mee.2025.112386","url":null,"abstract":"<div><div>Future collider experiments demand a new generation of tracking detectors with excellent spatial and temporal resolution, along with enhanced radiation hardness. Monolithic active pixel sensors (MAPS) based on silicon CMOS technology are proven to provide fine spatial and temporal resolution while being cost-effective. In terms of radiation hardness, however, wide band-gap semiconductors such as silicon carbide (SiC) promise superior performance. In this work, we make a first step towards MAPS development based on SiC-CMOS technology. We used the Fraunhofer IISB 2µm SiC-CMOS process to design the first stage in the electronic read-out chain of a MAPS, a charge-sensitive amplifier (CSA). Circuit simulations show that an equivalent noise charge of <span><math><mrow><mn>95</mn><mspace></mspace><mstyle><mi>e</mi></mstyle></mrow></math></span> to <span><math><mrow><mn>205</mn><mspace></mspace><mstyle><mi>e</mi></mstyle></mrow></math></span> is attainable for an input capacitance in the range of <span><math><mrow><mn>0</mn><mo>.</mo><mn>5</mn><mspace></mspace><mstyle><mi>p</mi><mi>F</mi></mstyle></mrow></math></span> to <span><math><mrow><mn>4</mn><mo>.</mo><mn>5</mn><mspace></mspace><mstyle><mi>p</mi><mi>F</mi></mstyle></mrow></math></span> at room temperature. The attained bandwidth of <span><math><mrow><mn>31</mn><mspace></mspace><mstyle><mi>k</mi><mi>H</mi><mi>z</mi></mstyle></mrow></math></span> was primarily limited by the large size of the MOSFETs in the used SiC-CMOS technology. We believe that a further increase in integration density could make SiC-MAPS a compelling alternative to its silicon-based counterparts.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"301 ","pages":"Article 112386"},"PeriodicalIF":3.1,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144925095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Investigating unsaturated output characteristics and potential applications of amorphous InGaZnO thin-film transistors with drain-connected field plate 研究漏极连接场极板非晶InGaZnO薄膜晶体管的不饱和输出特性及其潜在应用

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-09-02 DOI: 10.1016/j.mee.2025.112399

Po-Hsun Chen , Yung-Fang Tan , Yen-Che Huang

引用次数: 0

Introduction to the special issue on selected work from the 31st International Symposium on the physical and failure analysis of integrated circuits (IPFA 2024) 第31届集成电路物理与失效分析国际研讨会（IPFA 2024）专刊论文集简介

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-08-29 DOI: 10.1016/j.mee.2025.112398

Samuel Chef , Nagarajan Raghavan

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Digital filter on FPGA for subcellular resolution electrophysiology using a high-density CMOS-based microelectrode array 基于高密度cmos微电极阵列的亚细胞分辨率电生理FPGA数字滤波

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-08-20 DOI: 10.1016/j.mee.2025.112397

Maximilian Ell, Ahmet Büyükakyüz, Paul Werginz, Günther Zeck

{"title":"Digital filter on FPGA for subcellular resolution electrophysiology using a high-density CMOS-based microelectrode array","authors":"Maximilian Ell, Ahmet Büyükakyüz, Paul Werginz, Günther Zeck","doi":"10.1016/j.mee.2025.112397","DOIUrl":"10.1016/j.mee.2025.112397","url":null,"abstract":"<div><div>CMOS-based microelectrode arrays (MEAs) are used to record the electrical activity in neural tissues down to micron-scale cellular structures at high spatiotemporal resolution. Continuous recording of extracellular voltages would, however generate large datasets with very sparse spatial and temporal information. Towards an efficient strategy, we propose here a Field Programmable Gate Array (FPGA) which filters the continuous CMOS MEA data stream sampled at 28 kHz and extracts electrophysiological relevant information.</div><div>In a first step, sensors of interest are selected based on the electrical label-free identification of those sensors covered by the neural tissue via adhesion noise spectroscopy. The adhesion noise-based electrical imaging is validated against light microscopic images. The FPGA finite impulse response (FIR)-filtered data is validated against software-based post-processed data.</div><div>In a second step, we implement a spike-triggered average (STA) algorithm to identify and visualize electrical activity at subcellular resolution in retinal neurons, which allows for the tracking of axonal signal propagation within the neural tissue.</div><div>This label-free, non-invasive method enables the localization of sensors of interest for electrophysiological recordings and the extraction of neuronal signals. It represents a significant advancement in neuroscience tools, which facilitates the study of neuronal network dynamics at unprecedented spatiotemporal resolution.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"301 ","pages":"Article 112397"},"PeriodicalIF":3.1,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144932174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic memcapacitor-based neural network for diverse signal recognition 基于有机记忆电容的神经网络用于多种信号识别

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-08-19 DOI: 10.1016/j.mee.2025.112395

Fei-Le Xue , Li-Xing Li , Zhong-Da Zhang , Xu Gao , Jian-Long Xu , Ya-Nan Zhong , Sui-Dong Wang

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Reliable fabrication of nanoscale Cr patterns with dry lift-off process for hard mask applications in microelectronics 在微电子硬掩模应用中，用干式剥离工艺可靠地制造纳米级Cr图案

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-08-14 DOI: 10.1016/j.mee.2025.112396

Huikang Liang , Zhiwen Shu , Yuting Jiang , Man Liu , Quan Wang , Lei Chen , YueQiang Hu , Ming Ji , Huigao Duan

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Turnaround in the temperature dependence of RTN in 3D nand arrays entering the cryogenic regime 在进入低温状态的3D nand阵列中，RTN的温度依赖性的转变

IF 3.1 4区工程技术

Microelectronic Engineering Pub Date : 2025-08-06 DOI: 10.1016/j.mee.2025.112394

David G. Refaldi , Gerardo Malavena , Luca Colombo , Luca Chiavarone , Aurelio G. Mauri , Alessandro S. Spinelli , Christian Monzio Compagnoni

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Ti and Ni-based BEOL CMOS-compatible P+-InGaAs ohmic contacts for the future of wireless communications 基于Ti和ni的BEOL cmos兼容P+-InGaAs欧姆触点，用于未来的无线通信

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-07-26 DOI: 10.1016/j.mee.2025.112385

A. Lombrez , H. Boutry , A. Divay , L. Colas , N. Coudurier , T. Baron

{"title":"Ti and Ni-based BEOL CMOS-compatible P+-InGaAs ohmic contacts for the future of wireless communications","authors":"A. Lombrez , H. Boutry , A. Divay , L. Colas , N. Coudurier , T. Baron","doi":"10.1016/j.mee.2025.112385","DOIUrl":"10.1016/j.mee.2025.112385","url":null,"abstract":"<div><div>We report the electrical results of scaled Ti and Ni-based P<sup>+</sup>-InGaAs (:C) ohmic contacts integrated with a CMOS-compatible flow on 200 mm Si substrates. To evaluate contact performance as well as thermal stability, Transfer Length Method (TLM) measurements were first conducted after rapid thermal annealing (RTA). The targeted temperatures are relevant to the typical Si-CMOS Back End Of Line (BEOL) thermal budgets. The issue of acceptor passivation, resulting from hydrogen exposure of the InGaAs layer during CMOS-compatible process, is then emphasized. The etching of the contact cavities was identified as being the root cause. Finally, a previously developed TLM-based numerical extraction method was employed to achieve a more precise assessment of the resistivity parameters. Specific contact resistivity values as low as 5 × 10<sup>−7</sup> and 3 × 10<sup>−6</sup> Ω*cm<sup>2</sup> were respectively extracted from scaled Ti-based and Ni-based contacts. The 5 × 10<sup>−7</sup> Ω*cm<sup>2</sup> value approaches the required magnitude of 10<sup>−8</sup> Ω*cm<sup>2</sup> for the base contact in a Heterojunction Bipolar Transistor (HBT) in order to reach THz performance, which is crucial for future 6G/sub-millimeter Wave (sub-mmW) applications.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"301 ","pages":"Article 112385"},"PeriodicalIF":2.6,"publicationDate":"2025-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144711861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0