Microelectronic Engineering最新文献_第2页

A novel evaluation method of the aging performance of MEMS flow sensor MEMS 流量传感器老化性能的新型评估方法

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-22 DOI: 10.1016/j.mee.2024.112231

{"title":"A novel evaluation method of the aging performance of MEMS flow sensor","authors":"","doi":"10.1016/j.mee.2024.112231","DOIUrl":"10.1016/j.mee.2024.112231","url":null,"abstract":"<div>The development of Micro Electro Mechanical Systems (MEMS) flow sensor towards high level market applications generates various challenges, in particular also on the reliable functionality. With the advancement of reliability engineering technology, aging phenomenon of MEMS devices has been widely concerned. As a result, an aging evaluation method is essential. The accelerated aging testing (AAT) is the most widely used in traditional aging methods. However, its performance is limited by highly economic and time cost. In this paper, a novel aging effect model is proposed, in which a comprehensive approach that integrates AAT, lifetime distribution modeling, and either Finite Element Modeling Simulation (FEMS) or fatigue simulation (FS) as fundamental is explored. However, the difference from the conventional approach was that the AAT results is imported in FS, to confirm fatigue analysis, while FS predictions are instrumental in analyzing degradation or fatigue phenomena and estimation lifetime. In this way, aging performance is illustrated detailed with the lower aging cost and high efficiency. Meanwhile, the results of proposed FS are verified by a thermal cycle (TC) AAT. Specifically, the resistor degradation mechanism, the characteristic parameter degradation is calculated. Moreover, the lifetime evaluation was acquired by the Arrhenius model. Finally, the proposed aging performance evaluation method can be applied to both discrete devices and modules. Compared with the traditional aging method the high aging cost can be eliminated, and the proposed aging evaluation strategy can be used in various temperature conditions.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141736744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process RRAM 的开关和周期变化对 4 位加密/解密过程的影响

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-17 DOI: 10.1016/j.mee.2024.112244

引用次数: 0

Mask defect detection by combining wiener deconvolution and illumination optimization 结合维纳解卷积和照明优化进行掩膜缺陷检测

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-15 DOI: 10.1016/j.mee.2024.112245

引用次数: 0

All-2D materials-based 1T1M cells with threshold switching for electronic neurons 基于全二维材料的 1T1M 细胞，具有电子神经元的阈值开关功能

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-15 DOI: 10.1016/j.mee.2024.112247

引用次数: 0

Memristor-based input delay reservoir computing system for temporal signal prediction 基于 Memristor 的输入延迟蓄水池计算系统，用于时间信号预测

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-13 DOI: 10.1016/j.mee.2024.112240

引用次数: 0

Subthreshold read operations in 3D PCM: 1S1R device modeling and memory array analysis 3D PCM 中的阈下读取操作：1S1R 器件建模和存储器阵列分析

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-13 DOI: 10.1016/j.mee.2024.112211

Qiuyao Yu , Guangming Zhang , Yu Lei , Xinyu Yang , Houpeng Chen , Qian Wang , Zhitang Song

{"title":"Subthreshold read operations in 3D PCM: 1S1R device modeling and memory array analysis","authors":"Qiuyao Yu , Guangming Zhang , Yu Lei , Xinyu Yang , Houpeng Chen , Qian Wang , Zhitang Song","doi":"10.1016/j.mee.2024.112211","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112211","url":null,"abstract":"<div>3-D phase change memory (PCM) is one of the most promising next-generation nonvolatile memory, and the subthreshold sensing strategy can effectively improve its limited endurance. In this study, we propose a one-selector-one-resistor (1S1R) model with Monte Carlo (MC) function and provide array configurations for the worst case and the maximum bit line voltage (VBL-max), respectively. Based on these, the read window margin (RWM) is evaluated with various array sizes, OTS threshold voltage variations (<math><msub><mi>σ</mi><mi>var</mi></msub></math>), and bias voltages (VBias). Our results reveal that the RWM increases as the VBL approaches the VBL-max. Larger arrays lead to an increased leakage current difference, while larger <math><msub><mi>σ</mi><mi>var</mi></msub></math> values result in decreased cell current difference and VBL-max. The decrease in VBL-max further deteriorates the RWM. Additionally, we analyze the optimal VBias for 2-deck arrays achieves a 7% reduction in leakage energy consumption and a 22.6% increase in RWM compared to the V/2 bias. The optimal VBias depends on OTS devices and array sizes.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141607081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical characteristics of Si0.7Ge0.3/Si heterostructure-based n-type GAA MOSFETs 基于 Si0.7Ge0.3/Si 异质结构的 n 型 GAA MOSFET 的电气特性

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-13 DOI: 10.1016/j.mee.2024.112226

Pushp Raj , Kuei-Shu Chang-Liao , Pramod Kumar Tiwari

引用次数: 0

Large-scale growth of MoS2 hybrid layer by chemical vapor deposition with nanosheet promoter 利用纳米片促进剂通过化学气相沉积大规模生长 MoS2 混合层

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-13 DOI: 10.1016/j.mee.2024.112239

{"title":"Large-scale growth of MoS2 hybrid layer by chemical vapor deposition with nanosheet promoter","authors":"","doi":"10.1016/j.mee.2024.112239","DOIUrl":"10.1016/j.mee.2024.112239","url":null,"abstract":"<div>Molybdenum disulfide (MoS2) serves as the representative transition metal dichalcogenide material, showing promise for diverse applications owing to its outstanding properties. Extensive research has been conducted on the growth of large-scale MoS2 films using chemical vapor deposition (CVD) with seeding accelerators for various device applications. In this study, we investigated the growth of large-scale MoS2 films for potential applications, in which our approach utilized CVD with a homogeneous nanosheet promoter (MoS2 flakes) and effectively minimized residue creation. Optical and structural analyses confirmed the successful synthesis of a large-scale MoS2 layer. Moreover, the decoration of metallic nanoparticles on the MoS2 surface was employed to enhance the functionalities of application devices such as optical sensors and gas sensors. The capability of MoS2 to act as a nucleation site for nanoparticles during synthesis offered an intriguing pathway for augmenting the attachment and performance of nanoparticles on the MoS2 surface. The photodetector, integrating a hybrid MoS2 layer and Cu nanoparticles, exhibited superior photodetection properties, attributed to the increased excitons at the interface between the metal electrodes and MoS2 films. Furthermore, in order to enhance the characteristics of the gas sensor, Pd nanoparticles were incorporated during the synthesis of MoS2 layers. This dynamic interface between Pd particles and MoS2 films presents an opportunity to explore novel materials with enhanced catalytic properties.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0167931724001084/pdfft?md5=49a56c3d40161a07f961c036b291712e&pid=1-s2.0-S0167931724001084-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141622419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dependence of frequency-temperature stability on support tethers in dual-beam piezoresistive sensing MEMS resonators 双束压阻传感 MEMS 谐振器中频率-温度稳定性与支撑系绳的关系

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-10 DOI: 10.1016/j.mee.2024.112241

{"title":"Dependence of frequency-temperature stability on support tethers in dual-beam piezoresistive sensing MEMS resonators","authors":"","doi":"10.1016/j.mee.2024.112241","DOIUrl":"10.1016/j.mee.2024.112241","url":null,"abstract":"<div>This paper investigates the dependence of frequency stability over temperature on support tethers in dual-beam piezoresistive length-extensional (LE) mode microelectromechanical systems (MEMS) resonators. The designed dual-beam resonator consists of two identical single-crystal silicon beams, which are mechanically coupled and excited into vibrating in opposite phase to eliminate the inherent capacitive feedthrough signals. Both straight and folded beams are adopted as the support tethers for the reported dual-beam piezoresistive resonators. Quality factor (Q) and temperature distribution across the resonators with various support tethers are investigated by finite element method (FEM) analysis. It is found that folded beam tethers can reduce the support loss and hence improve the Q for the designed dual-beam resonator, while it comes with a tradeoff of high temperature rise on resonator body. The reported dual-beam resonator with straight beam tethers has low temperature rise on the resonator body, which is less sensitive to environmental temperature fluctuations, compared to its counterpart with folded beam tethers. Experimental results show that the fabricated dual-beam piezoresistive resonator with four straight beam tethers achieves a 0.5 ppm frequency shifts in the temperature-control chamber, which is nearly four times better than those with folded beam tethers.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141638272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A synoptic review of nanoscale vacuum channel transistor: Fabrication to electrical performance 纳米级真空沟道晶体管综述：从制造到电气性能

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-06-29 DOI: 10.1016/j.mee.2024.112230

引用次数: 0