Microelectronic Engineering最新文献_第10页

GaN low noise amplifier MMIC with LPF and HPF noise matching 具有 LPF 和 HPF 噪声匹配功能的 GaN 低噪声放大器 MMIC

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-05-04 DOI: 10.1016/j.mee.2024.112199

Mohammad Zaid , Purnima Kumari , Mohammad Sajid Nazir , Ahtisham Pampori , Umakant Goyal , Meena Mishra , Yogesh Singh Chauhan

{"title":"GaN low noise amplifier MMIC with LPF and HPF noise matching","authors":"Mohammad Zaid , Purnima Kumari , Mohammad Sajid Nazir , Ahtisham Pampori , Umakant Goyal , Meena Mishra , Yogesh Singh Chauhan","doi":"10.1016/j.mee.2024.112199","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112199","url":null,"abstract":"<div><p>In this paper, we introduce two innovative two-stage low noise amplifiers (LNAs), each with distinct noise-matching networks. The first LNA features a low pass filter (LPF) for noise-matching in both stages, while the second uses a high pass filter (HPF) in a similar capacity. Our research focuses on evaluating the performance differences that arise from using varied matching networks within specific frequency ranges. Highlighting the critical role of appropriate network selection for optimizing gain and noise performance, our approach includes the development of two Monolithic Microwave Integrated Circuits (MMICs) using cutting-edge 0.25<span><math><mi>μ</mi></math></span>m Gallium Nitride (GaN) technology. The C-band LNA, targeting a frequency range of 4–6 GHz, achieves an impressive average noise fig. (NF) of 1.5 dB and a gain of 17 dB. For the X-band range of 8–10 GHz, the LNA records a commendable average NF of 1.7 dB and a gain of 16 dB, demonstrating the effectiveness of our novel design strategies.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"291 ","pages":"Article 112199"},"PeriodicalIF":2.3,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140879850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser lift-off technique for applications in III-N microelectronics: A review 应用于 III-N 微电子学的激光升离技术：综述

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-28 DOI: 10.1016/j.mee.2024.112198

Sabuj Chowdhury , Sabrina Alam , Md Didarul Alam , Fahmida Sharmin Jui

引用次数: 0

A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection 基于自修复 MXene/PVA 水凝胶的可穿戴应变传感器，用于身体运动检测

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-23 DOI: 10.1016/j.mee.2024.112197

Yiqiang Zheng , Yilin Li , Lili Wang , Hao Xu , Wei Han

{"title":"A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection","authors":"Yiqiang Zheng , Yilin Li , Lili Wang , Hao Xu , Wei Han","doi":"10.1016/j.mee.2024.112197","DOIUrl":"10.1016/j.mee.2024.112197","url":null,"abstract":"<div><p>Developing flexible, stretchable, and self-healing wearable electronic devices with skin-like capabilities is highly desirable for healthcare and human-machine interaction. Hydrogels as a promising sensing material with crosslinked polymer networks have received widespread attention for decades. However, sensors based on hydrogels suffer from low sensitivity and stability due to their poor electrical conductivity or the movement of nanofillers in hydrogel networks. Herein, a stable, sensitive, and self-healing strain sensor is fabricated by the Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene nanosheets/polyvinyl alcohol (PVA) hydrogel (T-hydrogel). The introduction of MXene increases the number of H-bonds in the PVA hydrogel network and enhances the conductivity, resulting in high sensitivity, stability, and self-healing character. The self-healing T-hydrogel-based strain sensor has a performance close to that of the original sensor. In addition, the device is capable of detecting bodily motions, indicating the potential application in the field of human health monitoring and human-computer interaction.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"291 ","pages":"Article 112197"},"PeriodicalIF":2.3,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140762753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled in-situ reduction strategy for synthesis of transparent conductive metal meshes using tannic acid-based photoresists 使用单宁酸基光刻胶合成透明导电金属网的受控原位还原策略

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-22 DOI: 10.1016/j.mee.2024.112196

Xubin Guo, Huan Chen, Haihua Wang, Dong Wang, Qianqian Wang, Wenbing Kang

{"title":"Controlled in-situ reduction strategy for synthesis of transparent conductive metal meshes using tannic acid-based photoresists","authors":"Xubin Guo, Huan Chen, Haihua Wang, Dong Wang, Qianqian Wang, Wenbing Kang","doi":"10.1016/j.mee.2024.112196","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112196","url":null,"abstract":"<div><p>Transparent conductive films (TCFs) that converge high transmittance and high conductive properties are essential for many optoelectronic devices, and efforts have been made to acquire films with high transmittance as well as low resistance of the thin layer by low-cost means. Here, we introduce a novel and simple strategy for the controlled <em>in-situ</em> templated synthesis of a transparent conductive metal mesh by utilizing the good reducibility to silver ions of the patterned tannic acid (TA)-based photoresists. To achieve this, mesh patterns with tunable line width were first printed using the TA-based negative photoresists by laser direct writing equipment. Within the patterned domains, the phenolic hydroxyl groups could interact with metal ions and act as reducing agents, thus accelerating the <em>in-situ</em> growth of silver nanoparticles to fabricate silver grids. By changing the line width of the designed patterns and the PH of the plating solution, the metal grids with a high transmission (<em>T</em>) of 91.5% and a thin-layer resistance (<em>R</em><sub>s</sub>) as low as 4.15 Ω sq.<sup>−1</sup> are ultimately achieved after annealing treatment. Our description demonstrates a simple and effective approach that is potentially scalable to other materials as well.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"290 ","pages":"Article 112196"},"PeriodicalIF":2.3,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140650788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic thin film transistor review based on their structures, materials, performance parameters, operating principle, and applications 基于结构、材料、性能参数、工作原理和应用的有机薄膜晶体管综述

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-18 DOI: 10.1016/j.mee.2024.112193

Somvir Jakher, Rekha Yadav

{"title":"Organic thin film transistor review based on their structures, materials, performance parameters, operating principle, and applications","authors":"Somvir Jakher, Rekha Yadav","doi":"10.1016/j.mee.2024.112193","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112193","url":null,"abstract":"<div><p>Current research focuses on developing inexpensive, adaptable, portable, wearable electronic devices. Organic transistor-based devices play a crucial contribution in these developments. These devices have a low-temperature fabrication process, making it possible to use an extensive range of flexible substrates like cloth, paper, foil, fiber, and plastic. The article discusses a variety of materials used for different layers of the Organic Thin Film Transistor (OTFT). Also highlighting the structural variation, with their performance metrics, which include current, threshold voltage (<span><math><msub><mi>V</mi><mi>T</mi></msub></math></span>), mobility (<span><math><mi>μ</mi></math></span>), subthreshold slope (SS), and current ratio. Additionally, it presents an insight into the operating principle of OTFT to comprehend the conduction process better. A study is carried out for dielectric materials, including organic, inorganic, Self-assembled monolayer (SAM), hybrid, and nanocomposite, along with their benefits and drawbacks. The paper further discusses some crucial uses of organic transistors, such as low-cost Radio frequency identification tag (RFID), organic memory having the quality of three memory types, organic inverters, Deoxyribonucleic Acid (DNA) sensors, Active matrix displays, Gas sensors, Pressure sensors and Chemical sensors adopted two kinds of chemical detection methods from human body and environment. Finally, the article discusses the issues and future prospects of OTFT.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"290 ","pages":"Article 112193"},"PeriodicalIF":2.3,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140641444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical implementation of cobalt ferrite memristor in Chua's circuit for chaotic encryption Chua 混沌加密电路中钴铁氧体忆阻器的物理实现

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-14 DOI: 10.1016/j.mee.2024.112194

Kiran S. Seetala, William Clower, Matthew Hartmann, Sandra Zivanovic

{"title":"Physical implementation of cobalt ferrite memristor in Chua's circuit for chaotic encryption","authors":"Kiran S. Seetala, William Clower, Matthew Hartmann, Sandra Zivanovic","doi":"10.1016/j.mee.2024.112194","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112194","url":null,"abstract":"<div><p>Memory resistor, or memristor, has been realized as a discrete electronic device and has a perspective application in the field of cryptography. The physical implementation of the memristor in chaotic circuits has been scarcely explored. In this paper, a memristor is fabricated by spin-coating a cobalt ferrite precursor on a processed silicon and is then electro-sputtered with silver to act as the anode with the base silicon as the cathode. This fabrication process has a scalability potential in conjunction with integrated circuit fabrication techniques and complementary metal oxide semiconductor (CMOS) technologies. The fabricated cobalt ferrite memristor has shown a ratio between the on and off resistance of >1000 and has been implemented in a chaotic Chua's circuit, making it one of few physical implementations of a physical memristor in a physical circuit. The analysis and characterization of this circuit using bifurcation diagrams and Lyapunov exponent prove the chaotic behavior of a real Chua's circuit. This chaotic behavior can be useful in chaotic cryptography as nonperiodic oscillations can be leveraged to make sensitive information more difficult to interpret by bad actors.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"290 ","pages":"Article 112194"},"PeriodicalIF":2.3,"publicationDate":"2024-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140618483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint 三维集成电路和 2.5D 封装中的 CNT TSV 技术回顾：从电气角度看进展与挑战

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-10 DOI: 10.1016/j.mee.2024.112189

M.F. Abdullah, H.W. Lee

{"title":"Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint","authors":"M.F. Abdullah, H.W. Lee","doi":"10.1016/j.mee.2024.112189","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112189","url":null,"abstract":"<div><p>Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC) and 2.5D packaging. Both are within the advanced packaging topic for the digital and analog ICs aligned with More than Moore's paradigm. This article revisits the proposal and progress of carbon nanotubes (CNTs) TSV technology that potentially offers an improvement over the conventional Cu TSV. Today, CNTs TSV has never materialized in commercial products of 3D IC and 2.5D packaging. Compilation on notable numerical modeling works and matching them with related issues in fabrication suggest CNTs TSV technology is still in its infant stage. Although the simulation occasionally shows the advantages of CNTs TSV over Cu TSV in both digital and analog circuits, these results are prone to overestimation. One of the culprits is the number of CNT strands in the bundle which at best can be grown in the fab only <span><math><mo>∼</mo><mn>1</mn><mo>%</mo></math></span> of the theoretically compact bundle used in the <em>RLC</em> and <em>RLGC</em> models. The direction where CNTs TSV is targeting in 3D IC and 2.5D packaging is not clear by several researchers. As the requirements for high-speed digital and high-frequency analog are different, they are important to be sorted out as an essence of this review to project the path of this CNTs TSV technology.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"290 ","pages":"Article 112189"},"PeriodicalIF":2.3,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140542815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A micromachined Joule-Thomson cryocooler for ice lithography 用于冰光刻技术的微机械焦耳-汤姆逊低温冷却器

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-09 DOI: 10.1016/j.mee.2024.112180

Limin Qi , Rui Zheng , Dongli Liu , Haiyue Pei , Ding Zhao , Min Qiu

引用次数: 0

Study on the 12 in. wafer uniformity of high aspect ratio TSV filling by using rotation cathode 利用旋转阴极实现高纵横比 TSV 填充的 12 英寸晶圆均匀性研究

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-20 DOI: 10.1016/j.mee.2024.112181

Chi Zhang , Guoxian Zeng , Pengrong Lin , Hengtong Guo , ShiMeng Xu , XiaoChen Xie , Fuliang Wang

引用次数: 0

Filament-based memristor switching model 基于灯丝的忆阻器开关模型

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-17 DOI: 10.1016/j.mee.2024.112179

A.V. Fadeev, K.V. Rudenko

引用次数: 0