Microelectronic Engineering最新文献_第10页

Low temperature solid-state diffusion bonding of fine pitch Cu/Sn micro-bumps assisted with formic acid vapor for 3D integration 甲酸蒸气辅助下细间距Cu/Sn微凸点的低温扩散键合

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-06-01 Epub Date: 2025-01-17 DOI: 10.1016/j.mee.2025.112319

Hanlin Wan , Qian Wang , Jian Cai , Dejun Wang

{"title":"Low temperature solid-state diffusion bonding of fine pitch Cu/Sn micro-bumps assisted with formic acid vapor for 3D integration","authors":"Hanlin Wan , Qian Wang , Jian Cai , Dejun Wang","doi":"10.1016/j.mee.2025.112319","DOIUrl":"10.1016/j.mee.2025.112319","url":null,"abstract":"<div><div>Low-temperature solid-state diffusion (SSD) bonding of 5 μm diameter Cu/Sn micro-bumps was achieved with the assistance of formic acid vapor. Efforts were made to overcome surface oxidation of copper and uneven tin morphology, which are two major challenges in SSD bonding. Formic acid vapor was used as pre-treatment gas before bonding and protection gas during bonding. The results demonstrated that formic acid vapor is highly effective in removing surface oxidation on copper and preventing secondary oxidation, thereby facilitating a strong bond. Temperatures of 160 °C and 200 °C in 120 s were identified as ideal for pre-treatment. In SSD thermal compression bonding, 30 MPa TCB pressure was found to be necessary to overcome the uneven tin morphology. Other bonding parameters were also optimized, achieving a die shear strength of up to 59 MPa while reducing bonding temperature and time to 150 °C and 10 min. As bump scale shrinks, the interface analysis revealed a unique “teeth-like” structure in the bonding interface, contributing to improved shear strength due to intermetallic compound (IMC) growth and a favorable stress distribution. The assistance of formic acid vapor and the optimization of bonding parameters enhances the likelihood of future applications of solid-state bonding in industry, which could be an alternative choice for fine-pitch micro-bump bonding application.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"298 ","pages":"Article 112319"},"PeriodicalIF":2.6,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Neural network for in-sensor time series recognition based on optoelectronic memristor 基于光电忆阻器的传感器内时间序列识别神经网络

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-06-01 Epub Date: 2025-02-17 DOI: 10.1016/j.mee.2025.112329

Zhang Zhang , Qifan Wang , Gang Shi , Gang Liu

{"title":"Neural network for in-sensor time series recognition based on optoelectronic memristor","authors":"Zhang Zhang , Qifan Wang , Gang Shi , Gang Liu","doi":"10.1016/j.mee.2025.112329","DOIUrl":"10.1016/j.mee.2025.112329","url":null,"abstract":"<div><div>In recent years, inspired by multifunctional image sensors, in-sensor computing technology that combines sensing and computing functions has become a new research hotspot in the field of machine vision, which is an extremely promising way to break through the Von Neumann architecture by equipping the sensing unit with the computing ability and avoiding the data moving in the computation process. Whereas most existing in-sensor computing systems can only realize the processing of spatial frames in-sensor and cannot fuse the time series information. In order to solve this limitation and realize the processing of time information and spatial frames in the sensor at the same time, it is necessary to decouple and process the information in the processing unit in the sensor. In this paper, a time series recognition neural network based on optoelectronic memristor arrays is proposed. By using the optical plasticity and relaxation effects of the optoelectronic memristor arrays and based on the in-sensor computing technology, the information timing decoupling, processing and recognition in the sensor are realized. The results show that the network achieves a time series recognition accuracy of 98.4 % with two frames of image input, and the recognition rate still reaches 90 % after weight quantization and the addition of 40 % noise.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"298 ","pages":"Article 112329"},"PeriodicalIF":2.6,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Ultrasharp periodic AlN nanotips formed via purely subtractive nanofabrication 通过纯减法纳米加工形成的超尖锐周期性AlN纳米尖

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-06-01 Epub Date: 2025-01-11 DOI: 10.1016/j.mee.2025.112312

Robert Fraser Armstrong , Philip Aldam Shields

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Optimization of pattern quality in DMD scanning maskless lithography: A parametric study of the OS3L exposure algorithm DMD扫描无掩模光刻中图案质量的优化：OS3L曝光算法的参数化研究

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-06-01 Epub Date: 2025-02-14 DOI: 10.1016/j.mee.2025.112328

Ting-Hsuan Miau , Yung-Chun Lee

{"title":"Optimization of pattern quality in DMD scanning maskless lithography: A parametric study of the OS3L exposure algorithm","authors":"Ting-Hsuan Miau , Yung-Chun Lee","doi":"10.1016/j.mee.2025.112328","DOIUrl":"10.1016/j.mee.2025.112328","url":null,"abstract":"<div><div>In digital micromirror device (DMD) scanning maskless lithography systems, the pattern accuracy has a critical effect on the final component quality. However, the patterning performance is highly sensitive to the parameters used in the scanning process. Accordingly, this study examines the effects of three key parameters (the rotation angle of the DMD array, the step size, and the optical distortion of the image projection lens) on the patterning quality of a DMD-based scanning maskless lithography system utilizing an oblique scanning and step-strobe lighting (OS<sup>3</sup>L) exposure algorithm. The MATLAB simulation results show that the optical distortion of the image projection lens causes an uneven distribution of the exposure points along the <em>x</em>-axis direction, with sparser focal spots on the sides of the exposure field and denser spots in the center. In addition, the results suggest that the DMD rotation angle should be close to (but not less than) the critical angle, i.e., the angle at which the maximum horizontal resolution is obtained. Finally, the light spot distribution is extremely sensitive to the step size, but the relationship between them is unpredictable and nonlinear. Consequently, the effects of the step size on the light spot distribution should be checked on a case-by-case basis. Overall, the results presented in this study provide useful guidelines for the selection of the parameter settings that optimize the patterning quality in DMD-based scanning maskless lithography systems using the OS<sup>3</sup>L exposure algorithm.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"298 ","pages":"Article 112328"},"PeriodicalIF":2.6,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143436478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Optimization of read operation for low power consumption in 3D NAND flash memory 3D NAND快闪记忆体低功耗读取操作之优化

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-06-01 Epub Date: 2025-02-20 DOI: 10.1016/j.mee.2025.112324

Jesun Park , Seongwoo Kim , Taeyoung Cho , Myounggon Kang

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Multiple Aztec steps as an angle resolved micro-spectrometer by grayscale ice lithography 多重阿兹特克步骤作为一个角度分辨微光谱仪的灰度冰光刻

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-03-01 Epub Date: 2024-12-25 DOI: 10.1016/j.mee.2024.112309

Jinyu Guo , Kangping Liu , Shuoqiu Tian , Wentao Yuan , Hao Quan , Qiucheng Chen , Qingxin Wu , Rui Zheng , Ding Zhao , Yifang Chen , Min Qiu

{"title":"Multiple Aztec steps as an angle resolved micro-spectrometer by grayscale ice lithography","authors":"Jinyu Guo , Kangping Liu , Shuoqiu Tian , Wentao Yuan , Hao Quan , Qiucheng Chen , Qingxin Wu , Rui Zheng , Ding Zhao , Yifang Chen , Min Qiu","doi":"10.1016/j.mee.2024.112309","DOIUrl":"10.1016/j.mee.2024.112309","url":null,"abstract":"<div><div>For decades, Aztec steps have been widely attained because of the potential application as an angle-resolved micro-spectroscope. However, the challenge in replicating multiple steps with less than 1 nm precision hinders the Aztec steps to be commercialized. Although grayscale electron beam lithography (G-EBL) on PMMA (polymethyl methacrylate) has been tried but the surface roughness as well as the flatness still remains a big issue. This work evaluates the grayscale e-beam lithography in amorphous solid water (ASW), nicknamed as ice lithography, for Aztec steps by numerical simulation based on Monte Carlo algorithm. For comparison, grayscale electron beam lithography in PMMA was included in the simulation. Furthermore, simulation using finite difference and time domain (FDTD) method was also carried out to theoretically characterize the angle-resolved spectra by the numerically modeled Aztec steps in ASW and PMMA, respectively. Our results show that grayscale ice lithography on ASW is able to replicate Aztec steps with much smother surface and better flatness than that on PMMA, giving rise to significantly improved spectral resolution.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112309"},"PeriodicalIF":2.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The effect of DC bias and fast-rise pulse voltage on delayed impact ionization in a silicon diode structure 直流偏置和快速上升脉冲电压对硅二极管结构中延迟冲击电离的影响

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-03-01 Epub Date: 2024-11-22 DOI: 10.1016/j.mee.2024.112292

Alexey F. Kardo-Sysoev , Maksim N. Cherenev , Alexander G. Lyublinsky , Shaira A. Yusupova , Elena I. Belyakova , Mikhail I. Vexler

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Etching of tungsten via a combination of thermal oxide formation and wet-chemical oxide dissolution 通过热氧化物形成和湿化学氧化物溶解相结合的方法对钨进行蚀刻

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-03-01 Epub Date: 2024-12-18 DOI: 10.1016/j.mee.2024.112304

Antoine Pacco , Teppei Nakano , Jana Loyo Prado , Ju-Geng Lai , Hikaru Kawarazaki , Efrain Altamirano Sanchez

{"title":"Etching of tungsten via a combination of thermal oxide formation and wet-chemical oxide dissolution","authors":"Antoine Pacco , Teppei Nakano , Jana Loyo Prado , Ju-Geng Lai , Hikaru Kawarazaki , Efrain Altamirano Sanchez","doi":"10.1016/j.mee.2024.112304","DOIUrl":"10.1016/j.mee.2024.112304","url":null,"abstract":"<div><div>In this work, an etching process for the controlled and partial recess of tungsten metal was developed. The process comprises two steps which can be repeated: a thermal oxidation of the tungsten followed by the oxide dissolution in an acidic or basic solution. During the first step the W metal is heated in the presence of O<sub>3</sub> gas in the temperature range of 210–290 °C forming a WO<sub>3</sub> oxide. During the second step this thermally grown oxide is then selectively dissolved towards the underlying W metal. Both NH<sub>4</sub>OH and H<sub>3</sub>PO<sub>4</sub> were down selected as the best wet chemical dissolution agents in terms of dissolution rate and selectivity. By utilizing this combined thermal/wet-chemical cyclic etch process, the total W recess can be tuned on the nanoscale based on oxidation temperature and total number of cycles. This process was then applied for the deep recess (∼180 nm) of narrow (∼20 nm) tungsten trenches for the fabrication of the bottom contacts in complementary field-effect transistors (CFET).</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112304"},"PeriodicalIF":2.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Application of atomic force microscopy technology in doping characterization of semiconductor materials and devices 原子力显微镜技术在半导体材料和器件掺杂表征中的应用

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-03-01 Epub Date: 2024-12-30 DOI: 10.1016/j.mee.2024.112310

Xiaomeng Liu, Xiangsheng Wang, Xinyou Liu, Yanpeng Song, Yiwen Zhang, Hailing Wang, Ying Zhang, Guilei Wang, Chao Zhao

{"title":"Application of atomic force microscopy technology in doping characterization of semiconductor materials and devices","authors":"Xiaomeng Liu, Xiangsheng Wang, Xinyou Liu, Yanpeng Song, Yiwen Zhang, Hailing Wang, Ying Zhang, Guilei Wang, Chao Zhao","doi":"10.1016/j.mee.2024.112310","DOIUrl":"10.1016/j.mee.2024.112310","url":null,"abstract":"<div><div>The precise characterization of the doping profile is crucial for optimizing the performance and structural integrity of semiconductor devices. As the size of semiconductor devices continues to diminish, the need of precise characterization of doping profiles has become increasingly urgent. Atomic Force Microscopy (AFM) has become a promising technique for doping profile characterization within the semiconductor field, owing to its high spatial resolution, multidimensional feature analysis, and flexibility in various working environments. Based on AFM technology, various techniques have been developed for doping characterization, such as scanning capacitance microscope (SCM), scanning spreading resistance microscope (SSRM) and scanning microwave impedance microscope (sMIM). In this work, we systematically review the application of these three techniques for doping characterization and summarize their strengths and limitations. Furthermore, we also evaluate their capability in characterizing the doping profiles of miniature devices with three-dimensional (3D) architectures. This work offers feasible approaches for advanced semiconductor device manufacturing.</div><div>© 2012 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Global Science and Technology Forum Pte Ltd.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112310"},"PeriodicalIF":2.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance copper-seed-layer deposition using 60-MHz high-frequency–direct current superimposed magnetron sputtering 采用60 mhz高频直流叠加磁控溅射技术制备高性能铜种子层

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-03-01 Epub Date: 2024-12-20 DOI: 10.1016/j.mee.2024.112307

Byeong Hwa Jeong , Dong Woo Kim , Da Hee Park , Shin Kim , Yong Seok Jang , Yasuyuki Taura , Yutaka Kokaze , Sang Ho Lee , Geun Young Yeom

{"title":"High-performance copper-seed-layer deposition using 60-MHz high-frequency–direct current superimposed magnetron sputtering","authors":"Byeong Hwa Jeong , Dong Woo Kim , Da Hee Park , Shin Kim , Yong Seok Jang , Yasuyuki Taura , Yutaka Kokaze , Sang Ho Lee , Geun Young Yeom","doi":"10.1016/j.mee.2024.112307","DOIUrl":"10.1016/j.mee.2024.112307","url":null,"abstract":"<div><div>This study aims to demonstrate the deposition of high-performance Cu-seed layers using a very high frequency–direct current (VHF–DC) superimposed magnetron sputtering system for sub-20-nm dual-damascene interconnects. Plasma diagnostics revealed substantial improvements in plasma properties with electron densities measured at <em>n</em><sub><em>e</em></sub> ≈ 1.71 × 10<sup>16</sup> m<sup>−3</sup> for 40.68 MHz VHF–DC, and <em>n</em><sub><em>e</em></sub> ≈ 1.63 × 10<sup>17</sup> <!-->m<sup>−3</sup> for 60 MHz VHF–DC. These enhancements enabled superior step coverage and thin-film uniformity, particularly in high-aspect-ratio structures, achieving a bottom-to-top coverage ratio exceeding 100 % at an RF bias of 200 W. Comparative analysis using X-ray diffraction and X-ray photoelectron spectroscopy showed that Cu<img>Mn films deposited via VHF–DC superimposed sputtering exhibited improved Cu (111) crystallinity, reduced void formation, and enhanced adhesion compared to conventional DCMS. These findings reveal VHF–DC superimposed sputtering as a critical technological advancement, offering enhanced process reliability and scalability for next-generation semiconductor devices.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112307"},"PeriodicalIF":2.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0