Microelectronic Engineering最新文献_第9页

Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint 三维集成电路和 2.5D 封装中的 CNT TSV 技术回顾：从电气角度看进展与挑战

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-10 DOI: 10.1016/j.mee.2024.112189

M.F. Abdullah, H.W. Lee

{"title":"Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint","authors":"M.F. Abdullah, H.W. Lee","doi":"10.1016/j.mee.2024.112189","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112189","url":null,"abstract":"<div><p>Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC) and 2.5D packaging. Both are within the advanced packaging topic for the digital and analog ICs aligned with More than Moore's paradigm. This article revisits the proposal and progress of carbon nanotubes (CNTs) TSV technology that potentially offers an improvement over the conventional Cu TSV. Today, CNTs TSV has never materialized in commercial products of 3D IC and 2.5D packaging. Compilation on notable numerical modeling works and matching them with related issues in fabrication suggest CNTs TSV technology is still in its infant stage. Although the simulation occasionally shows the advantages of CNTs TSV over Cu TSV in both digital and analog circuits, these results are prone to overestimation. One of the culprits is the number of CNT strands in the bundle which at best can be grown in the fab only <span><math><mo>∼</mo><mn>1</mn><mo>%</mo></math></span> of the theoretically compact bundle used in the <em>RLC</em> and <em>RLGC</em> models. The direction where CNTs TSV is targeting in 3D IC and 2.5D packaging is not clear by several researchers. As the requirements for high-speed digital and high-frequency analog are different, they are important to be sorted out as an essence of this review to project the path of this CNTs TSV technology.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"290 ","pages":"Article 112189"},"PeriodicalIF":2.3,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140542815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A micromachined Joule-Thomson cryocooler for ice lithography 用于冰光刻技术的微机械焦耳-汤姆逊低温冷却器

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-09 DOI: 10.1016/j.mee.2024.112180

Limin Qi , Rui Zheng , Dongli Liu , Haiyue Pei , Ding Zhao , Min Qiu

引用次数: 0

Study on the 12 in. wafer uniformity of high aspect ratio TSV filling by using rotation cathode 利用旋转阴极实现高纵横比 TSV 填充的 12 英寸晶圆均匀性研究

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-20 DOI: 10.1016/j.mee.2024.112181

Chi Zhang , Guoxian Zeng , Pengrong Lin , Hengtong Guo , ShiMeng Xu , XiaoChen Xie , Fuliang Wang

引用次数: 0

Filament-based memristor switching model 基于灯丝的忆阻器开关模型

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-17 DOI: 10.1016/j.mee.2024.112179

A.V. Fadeev, K.V. Rudenko

引用次数: 0

Fabrication of nanoscale stencils through focused ion beam milling and dry transfer of silicon-on-nothing membrane with perforations 通过聚焦离子束铣削和带孔硅基膜干法转移制作纳米级模板

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-14 DOI: 10.1016/j.mee.2024.112172

Taeyeong Kim, Jungchul Lee

{"title":"Fabrication of nanoscale stencils through focused ion beam milling and dry transfer of silicon-on-nothing membrane with perforations","authors":"Taeyeong Kim, Jungchul Lee","doi":"10.1016/j.mee.2024.112172","DOIUrl":"10.1016/j.mee.2024.112172","url":null,"abstract":"<div><p>Nanoscale stencil lithography, providing sub-micrometer resolutions, is being implemented as a reliable patterning technique within the nanotechnology domain. Despite their advantages such as no resist processing, easy manipulation and reusability, patterning using a nanoscale stencil often faces challenges due to the gap between the nanoscale stencil and the substrate. This tends to result in unwanted pattern blurring, typically dimension wider than intended design. To address this issue, we minimize the gap by conformally attaching the nanoscale stencil to the substrate, thereby effectively eliminating a key factor contributing to the blurring effect. The nanoscale stencil is fabricated by forming nanoslits on the 50 nm thick Silicon-on-Nothing (SON) membrane with perforations, using focused ion beam (FIB) milling. The transfer of this stencil onto a substrate enables conformal adhesion due to its 10<span><math><msup><mrow></mrow><mn>12</mn></msup></math></span> times lower flexural rigidity of the stencil compared to bulk silicon. Upon deposition of chromium and gold through the transferred stencil, a metal pattern array with the full width at half maximum (FWHM) of 43 nm is produced, demonstrating the potential of our approach for fabricating uniform nanoscale patterns with enhanced pattern resolution.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"289 ","pages":"Article 112172"},"PeriodicalIF":2.3,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of ion charging effect to improve reactive-ion-etching profile of PbSe grating structures 研究离子充电效应以改善 PbSe 光栅结构的反应离子蚀刻曲线

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-09 DOI: 10.1016/j.mee.2024.112170

Tehere Hemati , Gang Yang , Binbin Weng

引用次数: 0

Double channeled nanotube gate all around field effect transistor with drive current boosted 驱动电流增强型双通道纳米管栅极全周场效应晶体管

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-07 DOI: 10.1016/j.mee.2024.112171

Laixiang Qin , He Tian , Chunlai Li , Yiqun Wei , Jin He , Yandong He , Tianling Ren , Zhangwei Xu , Yutao Yue

{"title":"Double channeled nanotube gate all around field effect transistor with drive current boosted","authors":"Laixiang Qin , He Tian , Chunlai Li , Yiqun Wei , Jin He , Yandong He , Tianling Ren , Zhangwei Xu , Yutao Yue","doi":"10.1016/j.mee.2024.112171","DOIUrl":"10.1016/j.mee.2024.112171","url":null,"abstract":"<div><p>Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping with increasingly serious power consumption dissipation and short channel effects (SCE) degradation as the semiconductor technology enters into sub-10 nm technology node. Nanotube GAAFET (NT GAAFET) with inner and outer channels surrounded by inner and outer gates proves to be superior than nanowire GAAFET in drive current (I<sub>on</sub>) augmentation and SCEs inhibition attributed to enhanced gate electrostatic integrity, holding promise to expand the Moore's law Roadmap further beyond. Herein, we demonstrate a doubled-channeled NT GAAFET (DC NT GAAFET) structure with I<sub>on</sub> (total value) boost in comparison with NT GAAFET and NW GAAFET with the same footprint. I<sub>on</sub> gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. I<sub>off</sub> (total value) of DC NT GAAFET degrades by 61.8% than that of NT GAAFET. Whereas SS and I<sub>on</sub>/I<sub>off</sub> ratio are almost comparable in DC NT GAAFET and NT GAAFET, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with respect to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"289 ","pages":"Article 112171"},"PeriodicalIF":2.3,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140097657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving performance of cathode NMC-811 by CeO2-coating for Li-ion battery 通过 CeO2 涂层提高锂离子电池正极 NMC-811 的性能

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-03-04 DOI: 10.1016/j.mee.2024.112169

Muhammad Fakhrudin , Evvy Kartini , Anne Zulfia

引用次数: 0

Review of the pressure sensor based on graphene and its derivatives 基于石墨烯及其衍生物的压力传感器综述

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-29 DOI: 10.1016/j.mee.2024.112167

Yuwei Guo, Simei Zeng, Qi Liu, Jingye Sun, Mingqiang Zhu, Linan Li, Tao Deng

{"title":"Review of the pressure sensor based on graphene and its derivatives","authors":"Yuwei Guo, Simei Zeng, Qi Liu, Jingye Sun, Mingqiang Zhu, Linan Li, Tao Deng","doi":"10.1016/j.mee.2024.112167","DOIUrl":"10.1016/j.mee.2024.112167","url":null,"abstract":"<div><p>Pressure sensors are widely used in a variety of industrial automatic control environments and in everyday life, including production automatic control, aerospace, healthcare, electronic skin and many other industries. Different structural designs are suitable for different application scenarios. With the development of technology, the demand for high sensitivity and wide range pressure sensors is increasing. The appearance of graphene-based materials has pushed the performance of pressure sensors to new heights. In this paper, the research progress of pressure sensors in the past ten years based on graphene and its derivatives is deeply discussed. According to the classification of application directions based on different substrate structures, the current pressure sensors based on graphene and its derivatives are reviewed. Finally, the current development status of pressure sensing technology based on graphene and its derivatives is summarized, and the development prospect in this field is prospected.</p><p>Index Terms.</p><p>Pressure sensor, Graphene, Graphene derivatives.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"288 ","pages":"Article 112167"},"PeriodicalIF":2.3,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140035112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent advances in micro- and bio- electromechanical system architectures for energy efficient chemiresistors 用于高能效化学电阻器的微型和生物机电系统架构的最新进展

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-28 DOI: 10.1016/j.mee.2024.112168

Bharat Sharma , Mukesh Kumar , Ashutosh Sharma

{"title":"Recent advances in micro- and bio- electromechanical system architectures for energy efficient chemiresistors","authors":"Bharat Sharma , Mukesh Kumar , Ashutosh Sharma","doi":"10.1016/j.mee.2024.112168","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112168","url":null,"abstract":"<div><p>The recent evolution of microelectromechanical systems (MEMSs) presents a more mature technology that expands from pure research towards multidisciplinary nanoelectromechanical systems (NEMS) research. The smaller size of NEMS makes them multifunctional, fast, energy-saving, and sensitive to any external stimuli. The extreme sensitivity of these NEMS opens new avenues to the various industrial sector of applications in biosensing, gas sensing, and medical implants which won't be possible with traditional MEMS counterparts. Most of the resistive-gas sensors are more popular than others but their elevated working temperatures consume more energy and limit their real-world applications. Various self-heating, embedded MEMS microheaters, and materials have been explored to improve the sensing performance. Thus, there is an urgent need of the hour to review the associated manufacturing techniques and evolution of MEMS fabrication for energy-saving gas sensors and new developments in this area. We overview the various manufacturing process and developments in MEMS/NEMS for gas sensor applications, and their historical perspectives, and provide future guidelines to meet the existing challenges for real-world gas sensing applications.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"288 ","pages":"Article 112168"},"PeriodicalIF":2.3,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0167931724000376/pdfft?md5=2982089a37b8fa2f8587db994aaec00c&pid=1-s2.0-S0167931724000376-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140095924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0