Microelectronic Engineering最新文献

Metallurgical reactions and high-temperature long-term reliability of the Sn-2.3Ag flip-chip solder bump

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-29 DOI: 10.1016/j.mee.2024.112293

Eun-Su Jang, Jeong-Won Yoon

{"title":"Metallurgical reactions and high-temperature long-term reliability of the Sn-2.3Ag flip-chip solder bump","authors":"Eun-Su Jang, Jeong-Won Yoon","doi":"10.1016/j.mee.2024.112293","DOIUrl":"10.1016/j.mee.2024.112293","url":null,"abstract":"<div><div>Flip-chip bonding technology has been extensively applied in the semiconductor packaging field given the recent increase in demand for electronic products requiring miniaturization and high performance. In this study, a high-temperature long-term reliability evaluation was performed to evaluate the metallurgical reaction and mechanical properties at the Sn-2.3Ag (wt%) flip-chip solder bump joints. Isothermal aging was performed for up to 2000 h at 150 °C. A Ni<sub>3</sub>Sn<sub>4</sub> intermetallic compound (IMC) was formed at the interface of the solder joints, and the thickness of the IMC layer increased as the isothermal aging time increased; however, the thickness of Ni under bump metallization (Ni UBM) layer was decreased during the growth of the IMC. Linear regression analysis showed that the growth thickness of the IMC layer and the consumption thickness of the Ni UBM layer varied linearly as functions of the square root of the isothermal aging time. Based on this analysis, the growth rate constant of the IMC layer and consumption rate constant of the Ni UBM layer were 0.000756 and 0.000303 μm/s<sup>1/2</sup>, respectively. Thereafter, shear tests were performed to evaluate the mechanical properties of the solder joints. As the isothermal aging time increased, the variation of shear strength was not large. However, the shear strength decreased slightly and then remained constant. As a result of the analysis of the fractured surface, most conditions exhibited ductile fracture behavior inside the solder bump, while in the case of specimens isothermally aged for 500, 1000, 1500, and 2000 h, cratering occurred. By observing the changes in the fracture mode, the ductile fracture behavior became less prominent, and the occurrence of cratering tended to become more prominent as the isothermal aging time increased.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112293"},"PeriodicalIF":2.6,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142746270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformity in physical vapor deposition 模拟和优化反应器气流和磁场，提高物理气相沉积过程中的薄膜均匀性

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-26 DOI: 10.1016/j.mee.2024.112294

Yongshuan Wu , Kefan Liu , Pengcheng She , Junhui Li

{"title":"Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformity in physical vapor deposition","authors":"Yongshuan Wu , Kefan Liu , Pengcheng She , Junhui Li","doi":"10.1016/j.mee.2024.112294","DOIUrl":"10.1016/j.mee.2024.112294","url":null,"abstract":"<div><div>Planar magnetron sputtering reactors are widely utilized in the semiconductor industry due to their high deposition rate, low substrate temperature, and capability for large-area coating. Careful control of the reactor's flow field and magnetic field is essential to ensure appropriate thickness uniformity of the thin film and uniform etching of the target. Utilizing finite element analysis software, simulations were conducted to obtain numerical solutions for the airflow and magnetic field. An increase in the inlet diameter from 4 mm to 5 mm resulted in a 63.4 % decrease in the gas distribution unevenness coefficient. Conversely, increasing the outlet diameter from 1 mm to 2 mm led to a 636.6 % increase in the coefficient. At a pitch of 11.7 mm, the horizontal magnetic field component on the target surface peaked at 0.24 T, covering a larger area. A dual-runway structure reduced the circumferential component of the horizontal magnetic field by more than half. Analysis of the results precipitated the optimization of key component structures, resulting in an optimal solution: an air ring diameter of 5 mm, an outlet diameter of 1 mm, outlet spacing of 12 mm, double inlets, and 38 outlets on each side of the air ring. Further optimization determined the optimal magnet-to-target surface spacing of 11.7 mm, with the dual-runway structure effectively improving the uniformity of the radial magnetic field distribution and increasing the target etching area. This study provides a theoretical basis for optimizing planar magnetron sputtering reactors.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112294"},"PeriodicalIF":2.6,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142722999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High inductance 3D arch inductor based on non-photosensitive polyimide 基于非光敏聚酰亚胺的高电感三维拱形电感器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-20 DOI: 10.1016/j.mee.2024.112291

Zepeng Wang , Qianzhen Su , Chao Zhang , Bo Zhang , Xiaolong Wen , Haoyuan Zhao , Dandan Liu , Jingliang Li , Jianhua Li

{"title":"High inductance 3D arch inductor based on non-photosensitive polyimide","authors":"Zepeng Wang , Qianzhen Su , Chao Zhang , Bo Zhang , Xiaolong Wen , Haoyuan Zhao , Dandan Liu , Jingliang Li , Jianhua Li","doi":"10.1016/j.mee.2024.112291","DOIUrl":"10.1016/j.mee.2024.112291","url":null,"abstract":"<div><div>Due to their low parasitic capacitance, minimal substrate losses, and high inductance values, three-dimensional MEMS inductors are increasingly used in microelectronics applications, such as MEMS sensors, RF MEMS, and energy storage devices. Conventional fabrication techniques, including UV-LIGA lithography and through‑silicon vias (TSV), are commonly employed to create high-aspect-ratio structures for 3D inductors. However, these processes are often complex and challenging. To simplify the process, we proposed a novel fabrication method for arched inductors utilizing non-photosensitive polyimide. The high viscosity of polyimide facilitates the formation of sloped sidewalls during development, eliminating the need for high-aspect-ratio structures in the inductor fabrication. By controlling the development time, we achieve the desired polyimide sidewall morphology. Additionally, to achieve high inductance, a high-permeability Co-based amorphous alloy wire was used as the magnetic core of the inductor. The maximum inductance of the inductor can reach 1710 nH at an excitation frequency of 71.4 MHz.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112291"},"PeriodicalIF":2.6,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable from wet etching of planar AlN 将干法蚀刻和热选择性湿法蚀刻相结合，制造出均匀、周期性的奇异氮化铝纳米孔阵列，获得平面氮化铝湿法蚀刻无法实现的几何形状

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-08 DOI: 10.1016/j.mee.2024.112263

Robert Fraser Armstrong , Philip Shields

{"title":"Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable from wet etching of planar AlN","authors":"Robert Fraser Armstrong , Philip Shields","doi":"10.1016/j.mee.2024.112263","DOIUrl":"10.1016/j.mee.2024.112263","url":null,"abstract":"<div><div>Aluminium nitride (AlN) is a wide bandgap semiconductor with far reaching realised and potential applications in electronics and optoelectronic technology. For example, gallium nitride (GaN) quantum dots (QDs) housed within an AlN matrix are attractive due to the large bandgap offsets. However, making suitable AlN sites to house GaN QDs is challenging due to the difficulty in fashioning 3D AlN structures. This results from AlN's strong bonds that are difficult to chemically etch.</div><div>Whilst dry etching of AlN nanostructures has been explored, wet etching at the nanoscale has been limited by the common exposed facet of AlN being etch-resistant. Hence, wet etching of AlN to create uniform arrays of periodic nanohole nanostructures has, thus far, not been heavily explored.</div><div>In this paper, an initial dry etching of a 2D AlN planar template is used to expose alternative wet-etchable facets so that periodic arrays of nanohole structures are revealed by wet-etching. Both a study of different initial dry etched structures, including tapered nanoholes, and wet etching time were performed. A model to describe the dynamics of wet etching on the different dry etched nanohole structures is proposed. Periodic arrays of uniform nanohole features are realised that hold promise for applications such as the housing of site-controlled quantum dots.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"295 ","pages":"Article 112263"},"PeriodicalIF":2.6,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142660680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements 通过纳秒极化测量探究块状 Si:HfO2 FeFET 中电荷的来源

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-06 DOI: 10.1016/j.mee.2024.112284

Mor Mordechai Dahan , Halid Mulaosmanovic , Or Levit , Stefan Dünkel , Johannes Müller , Sven Beyer , Eilam Yalon

{"title":"Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements","authors":"Mor Mordechai Dahan , Halid Mulaosmanovic , Or Levit , Stefan Dünkel , Johannes Müller , Sven Beyer , Eilam Yalon","doi":"10.1016/j.mee.2024.112284","DOIUrl":"10.1016/j.mee.2024.112284","url":null,"abstract":"<div><div>FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity non-volatile memory and neuromorphic devices. However, charge trapping significantly affects device operation, leading to issues like read-after-write delay and limited endurance. Therefore, a detailed understanding of charge trapping, charge origin and its role in polarization switching is crucial. In this study, we uncover the spectral energy origin of polarization charges in Si:HfO<sub>2</sub> N-FeFET by probing electron (conduction band) and hole (valence band) currents separately during polarization-voltage (<em>P–V</em>) measurements. We utilize a fast (∼20 ns) and modified positive-up-negative-down (PUND) technique, where bulk, source, and drain currents of the FeFET are measured separately. The nanosecond timescale of the measurement results in measurable currents in FeFETs having dimensions of a few μm. This charge separation shows that program (PRG, <em>V</em><sub>GS</sub> > 0) charge originates from the conduction band, whereas erase (ERS, <em>V</em><sub>GS</sub> < 0) originates from the valence band of the Si. Moreover, the polarization curve (<em>P–V</em>) of a cycled device (following 5000 PRG/ERS pulses) shows measurable hysteresis even though the transfer curve of the same device shows that the memory window in the threshold voltage vanishes. Therefore, the FeFET polarization state can be read without delay after write operation by the fast PUND measurement, both for pristine and cycled FeFETs.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112284"},"PeriodicalIF":2.6,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process 论 PVD 工艺中不同气体比例下超薄氮化钛薄膜的力学性能

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-03 DOI: 10.1016/j.mee.2024.112283

Yao-Zih Lai , Weileun Fang

{"title":"On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process","authors":"Yao-Zih Lai , Weileun Fang","doi":"10.1016/j.mee.2024.112283","DOIUrl":"10.1016/j.mee.2024.112283","url":null,"abstract":"<div><div>Titanium Nitride (TiN<sub>x</sub>) thin film has numerous applications in semiconductors, nanotechnology, and various aspects of daily life. This study presents an approach to adjusting the mechanical properties of TiN<sub>x</sub> ultrathin films, including Young's modulus, residual stress, and coefficients of thermal expansion (CTE), by varying the gas ratio of N<sub>2</sub> and Ar during the Physical Vapor Deposition (PVD) process (DC magnetron sputtering). In the experiment, TiN<sub>x</sub> films with three different gas ratios R<sub>N</sub> (= N<sub>2</sub>/(N<sub>2</sub> + Ar)) were investigated. To demonstrate the feasibility of this approach, TiN<sub>x</sub> films with different R<sub>N</sub> values (0.3, 0.5, and 0.8) were deposited on SiO<sub>2</sub> beams to form composite test cantilevers. Measurements reveal significant changes (ranging from 33 % to 2-fold) in Young's modulus, residual stress, and CTE of the TiN<sub>x</sub> films by varying the gas ratio during the PVD process. As a result, this study provides a straightforward approach and guidelines for users to tailor TiN<sub>x</sub> films according to specific application requirements.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112283"},"PeriodicalIF":2.6,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology 基于单极 IZO TFT 技术的 10 kHz 带宽低功耗有源负反馈前端放大器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-01 DOI: 10.1016/j.mee.2024.112282

Mingjian Zhao, Yunfang Wang, Xinge Shi, Bin Li, Rongsheng Chen, Zhaohui Wu

{"title":"A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology","authors":"Mingjian Zhao, Yunfang Wang, Xinge Shi, Bin Li, Rongsheng Chen, Zhaohui Wu","doi":"10.1016/j.mee.2024.112282","DOIUrl":"10.1016/j.mee.2024.112282","url":null,"abstract":"<div><div>In this paper, we present a wide-bandwidth low-power front-end amplifier based on thin-film transistors (TFTs). The amplifier with the active negative feedback structure in the form of the common source is proposed, which achieves wide bandwidth under the condition of low power consumption. In addition, the capacitor bootstrap load structure is used in the core operational transconductance amplifier (OTA) circuit, which improves the loop gain. The proposed amplifier adopts the 10 μm channel length unipolar n-type indium‑zinc-oxide (IZO) TFT technology, with an area of 2 mm<sup>2</sup>. The test results show a gain of 36.3 dB, a bandwidth of 10 kHz, and a power consumption of 0.04 mW at a supply voltage of 10 V. The proposed amplifier is advanced in bandwidth, power, and area, has successfully obtained and amplified real-time electrocardiogram (ECG) and electromyography (EMG) signals, and also has excellent noise efficiency factor (NEF) and power efficiency factor (PEF). Therefore, the design has potential in the field of flexible bioelectrical signal detection and other wearable electronic devices in the future.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112282"},"PeriodicalIF":2.6,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices 基于 HfO2 的双极电阻开关器件中的设定和复位过程的动态变化

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-28 DOI: 10.1016/j.mee.2024.112281

G. Vinuesa , H. García , M.B. González , F. Campabadal , H. Castán , S. Dueñas

{"title":"Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices","authors":"G. Vinuesa , H. García , M.B. González , F. Campabadal , H. Castán , S. Dueñas","doi":"10.1016/j.mee.2024.112281","DOIUrl":"10.1016/j.mee.2024.112281","url":null,"abstract":"<div><div>The temporal evolution of the set and reset processes in TiN/Ti/HfO<sub>2</sub>/W metal-insulator-metal devices exhibiting resistive switching behavior is investigated in depth. To this end, current transients were recorded by applying different voltages, which allowed us to change the conductance of the device. While both set and reset transitions are faster with increasing applied voltage, they clearly exhibit different time responses. The set transition is characterized by a monotonic increase in current after a sudden initial rise in its value, while the reset transition is characterized by a notably nonlinear response that resembles a sigmoidal function. We have successfully modeled the reset current transient with a bi-dose function and defined its time constant (Time-to-Reset) as the time where the current variation reaches its maximum value. Our findings show that varying the initial conditions of the reset process, such as increasing the temperature and/or decreasing the initial resistance value, significantly affect the reset transient, exponentially increasing the reset time constant value. This allows us to model its dependencies with the equation of a plane.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112281"},"PeriodicalIF":2.6,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142571762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel high-Q Lamé mode bulk acoustic resonator 新型高 Q 值拉美模式体声谐振器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-22 DOI: 10.1016/j.mee.2024.112279

Zeyu Wu , Bo Niu , Yiyi Hong , Junyuan Zhao , Yinfang Zhu , Jinling Yang

引用次数: 0

Nonvolatile logic gate and full adder based on tri-terminal oxide resistive switching devices 基于三端氧化物电阻开关器件的非易失性逻辑门和全加法器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-21 DOI: 10.1016/j.mee.2024.112280

Jifang Cao , Jiabao Ye , Tao Wang , Yong Ding , Ran Cheng , Dong Liu , Bing Chen

引用次数: 0