Microelectronic Engineering最新文献

Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements 通过纳秒极化测量探究块状 Si:HfO2 FeFET 中电荷的来源

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-06 DOI: 10.1016/j.mee.2024.112284

{"title":"Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements","authors":"","doi":"10.1016/j.mee.2024.112284","DOIUrl":"10.1016/j.mee.2024.112284","url":null,"abstract":"<div><div>FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity non-volatile memory and neuromorphic devices. However, charge trapping significantly affects device operation, leading to issues like read-after-write delay and limited endurance. Therefore, a detailed understanding of charge trapping, charge origin and its role in polarization switching is crucial. In this study, we uncover the spectral energy origin of polarization charges in Si:HfO<sub>2</sub> N-FeFET by probing electron (conduction band) and hole (valence band) currents separately during polarization-voltage (<em>P–V</em>) measurements. We utilize a fast (∼20 ns) and modified positive-up-negative-down (PUND) technique, where bulk, source, and drain currents of the FeFET are measured separately. The nanosecond timescale of the measurement results in measurable currents in FeFETs having dimensions of a few μm. This charge separation shows that program (PRG, <em>V</em><sub>GS</sub> > 0) charge originates from the conduction band, whereas erase (ERS, <em>V</em><sub>GS</sub> < 0) originates from the valence band of the Si. Moreover, the polarization curve (<em>P–V</em>) of a cycled device (following 5000 PRG/ERS pulses) shows measurable hysteresis even though the transfer curve of the same device shows that the memory window in the threshold voltage vanishes. Therefore, the FeFET polarization state can be read without delay after write operation by the fast PUND measurement, both for pristine and cycled FeFETs.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process 论 PVD 工艺中不同气体比例下超薄氮化钛薄膜的力学性能

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-03 DOI: 10.1016/j.mee.2024.112283

{"title":"On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process","authors":"","doi":"10.1016/j.mee.2024.112283","DOIUrl":"10.1016/j.mee.2024.112283","url":null,"abstract":"<div><div>Titanium Nitride (TiN<sub>x</sub>) thin film has numerous applications in semiconductors, nanotechnology, and various aspects of daily life. This study presents an approach to adjusting the mechanical properties of TiN<sub>x</sub> ultrathin films, including Young's modulus, residual stress, and coefficients of thermal expansion (CTE), by varying the gas ratio of N<sub>2</sub> and Ar during the Physical Vapor Deposition (PVD) process (DC magnetron sputtering). In the experiment, TiN<sub>x</sub> films with three different gas ratios R<sub>N</sub> (= N<sub>2</sub>/(N<sub>2</sub> + Ar)) were investigated. To demonstrate the feasibility of this approach, TiN<sub>x</sub> films with different R<sub>N</sub> values (0.3, 0.5, and 0.8) were deposited on SiO<sub>2</sub> beams to form composite test cantilevers. Measurements reveal significant changes (ranging from 33 % to 2-fold) in Young's modulus, residual stress, and CTE of the TiN<sub>x</sub> films by varying the gas ratio during the PVD process. As a result, this study provides a straightforward approach and guidelines for users to tailor TiN<sub>x</sub> films according to specific application requirements.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology 基于单极 IZO TFT 技术的 10 kHz 带宽低功耗有源负反馈前端放大器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-11-01 DOI: 10.1016/j.mee.2024.112282

引用次数: 0

Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices 基于 HfO2 的双极电阻开关器件中的设定和复位过程的动态变化

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-28 DOI: 10.1016/j.mee.2024.112281

{"title":"Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices","authors":"","doi":"10.1016/j.mee.2024.112281","DOIUrl":"10.1016/j.mee.2024.112281","url":null,"abstract":"<div><div>The temporal evolution of the set and reset processes in TiN/Ti/HfO<sub>2</sub>/W metal-insulator-metal devices exhibiting resistive switching behavior is investigated in depth. To this end, current transients were recorded by applying different voltages, which allowed us to change the conductance of the device. While both set and reset transitions are faster with increasing applied voltage, they clearly exhibit different time responses. The set transition is characterized by a monotonic increase in current after a sudden initial rise in its value, while the reset transition is characterized by a notably nonlinear response that resembles a sigmoidal function. We have successfully modeled the reset current transient with a bi-dose function and defined its time constant (Time-to-Reset) as the time where the current variation reaches its maximum value. Our findings show that varying the initial conditions of the reset process, such as increasing the temperature and/or decreasing the initial resistance value, significantly affect the reset transient, exponentially increasing the reset time constant value. This allows us to model its dependencies with the equation of a plane.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142571762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel high-Q Lamé mode bulk acoustic resonator 新型高 Q 值拉美模式体声谐振器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-22 DOI: 10.1016/j.mee.2024.112279

引用次数: 0

Nonvolatile logic gate and full adder based on tri-terminal oxide resistive switching devices 基于三端氧化物电阻开关器件的非易失性逻辑门和全加法器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-21 DOI: 10.1016/j.mee.2024.112280

引用次数: 0

Simulations of X-ray focusing by zone plates in rotationally symmetric optical field utilizing the matrix-free Finite Difference Beam Propagation Method 利用无矩阵有限差分光束传播法模拟旋转对称光场中区板聚焦 X 射线的过程

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-19 DOI: 10.1016/j.mee.2024.112278

引用次数: 0

Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate 沉积在经过高频最后处理的硅衬底上的二氧化铪层中的电子陷阱

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-10-09 DOI: 10.1016/j.mee.2024.112277

{"title":"Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate","authors":"","doi":"10.1016/j.mee.2024.112277","DOIUrl":"10.1016/j.mee.2024.112277","url":null,"abstract":"<div><div>Electron trapping in HfO<sub>2</sub>-based MOS structures was studied through pulsed capacitance-voltage (C-V) technique. 10 nm HfO<sub>2</sub> layer was deposited by atomic layer deposition over a HF last treated Si substrate. The C-V curves were observed to shift to positive voltages driven by the positive applied voltage along the pulses, consistent with electron trapping due to tunneling transitions between the substrate and pre-existing defects within the oxide and the subsequent lattice relaxation through electron-phonon interaction. The dependences of the voltage shift for a given capacitance value (<em>ΔV</em><sub><em>C</em></sub>) with stress bias and time, allowed to distinguish two mechanisms. An initial trapping process occurs for times shorter than the microsecond, probably associated with a thin non-stoichiometric SiO<sub>x</sub> interfacial layer, which is followed by a trapping process that starts after tens of μs and progressively slowed down, associated with traps within the HfO<sub>2</sub> layer. Numerical simulations yield for the HfO<sub>2</sub> traps an energy of 1.3 eV below the conduction band edge, decreasing exponentially with the distance from the Si interface with a characteristic length of 1.7 nm; and phonon and relaxation energies of 50 meV and 1 eV, respectively. These physical parameters are consistent with previous reports of electron trapping in HfO<sub>2</sub> layers deposited on a controlled interfacial layer, suggesting that trapping properties of defects inside the HfO<sub>2</sub> layer are insensitive to the treatment of the Si surface before HfO<sub>2</sub> deposition. On the other hand, the observed large initial trapping suggests that the non-controlled SiO<sub>x</sub> interfacial region is more defective than a controlled one.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Superlattice Ferroelectric-Metal Field-effect Transistor for triple-level cell 3D NAND flash 为三级单元 3D NAND 闪存设计超晶格铁电-金属场效应晶体管

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-09-24 DOI: 10.1016/j.mee.2024.112276

引用次数: 0

Optimizing dose parameters for enhanced maskless lithography in MoS2-based devices 优化剂量参数以增强基于 MoS2 器件的无掩模光刻技术

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-09-19 DOI: 10.1016/j.mee.2024.112275

{"title":"Optimizing dose parameters for enhanced maskless lithography in MoS2-based devices","authors":"","doi":"10.1016/j.mee.2024.112275","DOIUrl":"10.1016/j.mee.2024.112275","url":null,"abstract":"<div><div>Maskless lithography simplifies the fabrication process and reduces costs compared to electron beam (<em>E</em>-beam) lithography, making it a more efficient choice for patterning nano-devices. Maskless lithography presents a promising avenue for expediting device fabrication by eliminating the need for masks. This technique can streamline the production of basic electronic devices, offering an efficient and low-cost alternative to traditional lithographic methods, like <em>E</em>-beam lithography. This study utilized a 405 nm photodiode to achieve pattern-writing with a minimum linewidth of 1 μm. Exploring optimal parameters includes adjustments in beam intensity, scan speed, and step size. Maskless lithography was applied to 2D transition metal dichalcogenides (TMDCs) material, MoS<sub>2</sub>, to investigate their electrical transport characteristics. The fabricated device exhibits an ON/OFF ratio of ∼1.7 × 10<sup>6</sup> and a mobility of ∼0.833 cm<sup>2</sup>/V·s, indicating a high switching efficiency. The results demonstrate optimized maskless lithography's potential for swift and cost-effective fabrication, offering intermediate-resolution patterning capabilities.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142314978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0