利用 MIM 波导和矩形环谐振器实现全光学逻辑门

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0

摘要

本研究设计并分析了使用带有矩形环形谐振器的金属-绝缘体-金属(MIM)波导的全光 OR、排他 OR (XOR)、NOR、XNOR、AND、NAND 和 NOT 逻辑门。该结构由一块银板、三个输入波导、一个输出波导和一个矩形环谐振器组成。其中一个输入端口用作控制端口。利用有限差分时域(FDTD)方法获得了拟议结构的光学频谱。为了实现所设计结构的全光逻辑门特性,相同相位或不同相位的光信号都要通过波导。通过获得透射谱(T)、对比度(CR)和调制深度(MD)参数来确定全光逻辑门的性能。为了确定输出端口的逻辑 1(ON)和逻辑 0(OFF)状态,全光逻辑门的传输阈值被定为 0.23。对于拟议的设计,最高传输率、对比度和调制深度值分别为 217%、6.75 dB 和 100%。该结构还支持 24 Tb/s 的数据传输速率。所设计的光逻辑门具有开发高性能光器件的重要特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Realization of all-optical logic gates using MIM waveguides and a rectangular ring resonator

Realization of all-optical logic gates using MIM waveguides and a rectangular ring resonator

In this study, all-optical OR, exclusive OR (XOR), NOR, XNOR, AND, NAND, and NOT logic gates using metal-insulator-metal (MIM) waveguides with a rectangular ring resonator are designed and analyzed. The structure has a silver plate with three input waveguides, one output waveguide, and a rectangular ring resonator. One of the input ports is used as a control port. The finite-difference time-domain (FDTD) method is utilized to obtain the optical spectrum of the proposed structures. To realize all-optical logic gate properties of the designed structures, optical signals with the same phase or different phases are passed through the waveguides. Transmission spectrum (T), contrast ratio (CR), and modulation depth (MD) parameters are obtained to determine the performances of all-optical logic gates. To determine the logic 1 (ON) and logic 0 (OFF) states of the output ports, the threshold transmission value is accepted as 0.23 for all-optical logic gates. For the proposed designs, the highest transmission, contrast ratio, and modulation depth values are 217%, 6.75 dB, and 100%, respectively. The structure also supports a data rate of 24 Tb/s. The designed optical logic gates have valuable features for developing high-performance optical devices.

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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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