新型高 Q 值拉美模式体声谐振器

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2024-10-22 DOI:10.1016/j.mee.2024.112279

Zeyu Wu , Bo Niu , Yiyi Hong , Junyuan Zhao , Yinfang Zhu , Jinling Yang

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引用次数: 0

摘要

本研究介绍了一种新型高 Q 值拉美模式 MEMS 谐振器，该谐振器通过支撑梁结构和蚀刻孔分布进行了优化，以最大限度地减少锚损耗和热弹性耗散 (TED)。谐振器采用绝缘体上硅（SOI）工艺制造，在不同的设计中分别达到了 129,200 和 102,100 的 Q 值，显示出真空条件下的显著改善，并突出了空气阻尼这一关键损耗机制。非线性分析表明材料非线性占主导地位。这些发现为开发高端 MEMS 器件（如低相位噪声振荡器和高分辨率传感器）提供了宝贵的指导，通过结构优化大幅降低了能量耗散并提高了 Q 值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

A novel high-Q Lamé mode bulk acoustic resonator

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A novel high-Q Lamé mode bulk acoustic resonator

This study introduces a novel high-Q Lamé mode MEMS resonator, optimized through support beam structures and etching hole distributions to minimize anchor losses and thermal elastic dissipation (TED). Fabricated using a Silicon-On-Insulator (SOI) process, the resonators achieved Q values of 129,200 and 102,100 in different designs, demonstrating significant improvements in vacuum conditions and highlighting air damping as a key loss mechanism. Nonlinear analysis revealed material nonlinearity dominance. These findings offer valuable guidelines for developing high-end MEMS devices, such as low phase noise oscillators and high-resolution sensors, by showcasing substantial reductions in energy dissipation and enhanced Q factors through structural optimizations.

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.