Investigating unsaturated output characteristics and potential applications of amorphous InGaZnO thin-film transistors with drain-connected field plate

IF 3.1 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2025-09-02 DOI:10.1016/j.mee.2025.112399

Po-Hsun Chen , Yung-Fang Tan , Yen-Che Huang

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Abstract

In this study, a via-hole type thin-film transistor (TFT) device based on indium–gallium–zinc–oxide (IGZO) material with the drain-connected field plate (DCFP) structure is investigated. Compared to the traditional symmetric source/drain structure, the device with DCFP exhibits unsaturated output drain current properties during operation. Also, according to the electrical measurements and the simulation results, a high electrical field is generated on the etching stop layer (ESL) right underneath the extended field plate, resulting in the effect of drain-induced barrier lowering (DIBL) and the shifts of threshold voltage (Vt). On the other hand, the unsaturated output characteristics are applied as a variable resistor according to the given gate bias (Vg). Therefore, a high pass filter (HPF) circuit is demonstrated based on the TFT device with the DCFP structure, which suggests its potential application for variable resistors based on the gate bias in the future circuit designs.

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研究漏极连接场极板非晶InGaZnO薄膜晶体管的不饱和输出特性及其潜在应用

本文研究了一种基于铟镓锌氧化物（IGZO）材料的漏极连接场极板（DCFP）结构的过孔型薄膜晶体管（TFT）器件。与传统的对称源漏结构相比，DCFP器件在工作过程中具有不饱和输出漏电流特性。此外，根据电学测量和仿真结果，在扩展场板正下方的刻蚀停止层（ESL）上产生了一个高电场，导致漏极感应势垒降低（DIBL）和阈值电压（Vt）的移位。另一方面，根据给定的栅极偏置（Vg），不饱和输出特性作为可变电阻应用。因此，基于DCFP结构的TFT器件演示了一种高通滤波器（HPF）电路，这表明了其在未来电路设计中基于门偏置的可变电阻的潜在应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.