Microelectronic Engineering最新文献_第3页

Unraveling the role of post-annealing in IGZO transistor for memory applications 揭示后退火在IGZO晶体管存储应用中的作用

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-01-19 DOI: 10.1016/j.mee.2025.112322

Nayeon Kim , Jiae Jeong , Jae Woo Lee , Jiyong Woo

{"title":"Unraveling the role of post-annealing in IGZO transistor for memory applications","authors":"Nayeon Kim , Jiae Jeong , Jae Woo Lee , Jiyong Woo","doi":"10.1016/j.mee.2025.112322","DOIUrl":"10.1016/j.mee.2025.112322","url":null,"abstract":"<div><div>We demonstrate that post-annealing techniques are important for achieving the transfer characteristics of indium‑gallium‑zinc oxide (IGZO) transistors and identify that their role depends on the sputter-deposited IGZO film conditions. The as-fabricated transistor with a thin IGZO channel, HfO<sub>2</sub> gate dielectric, and Mo gate electrode exhibits a constant drain current (I<sub>DS</sub>) over gate voltage (V<sub>GS</sub>). Although the oxygen (O<sub>2</sub>) plasma gas rate is adjusted from 0.2 to 1 sccm with an argon gas rate of 30 sccm during IGZO deposition, the I<sub>DS</sub> level was reduced by a factor of 10<sup>4</sup>. Notably, V<sub>GS</sub>-controlled transfer behavior of the transistors only starts after post-annealing is performed at temperatures above 300 °C, regardless of which IGZO channel properties are used. More specifically, since oxygen vacancies (V<sub>O</sub>s) serve as carriers in the IGZO, annealing in different O<sub>2</sub> gas or air environments to generate or reduce the number of V<sub>O</sub>s is found to be optimal for the V<sub>O</sub>-rich or V<sub>O</sub>-poor channels, respectively. In this study, we reveal that oxidation annealing appears to be a more effective way for achieving improved gate controllability (e.g., subthreshold swing). Accordingly, we further analyze how the V<sub>O</sub>s in the IGZO are involved in switching by examining the effect of annealing temperature and gate dielectric materials on the transfer curve. These results indicate that V<sub>O</sub>s in the bulk need to be annihilated to lower the off-state I<sub>DS</sub>, while a sufficient number of V<sub>O</sub>s near the channel and gate dielectric interface should be ensured to responded by V<sub>GS</sub> for rapid switching.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"298 ","pages":"Article 112322"},"PeriodicalIF":2.6,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low temperature solid-state diffusion bonding of fine pitch Cu/Sn micro-bumps assisted with formic acid vapor for 3D integration 甲酸蒸气辅助下细间距Cu/Sn微凸点的低温扩散键合

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-01-17 DOI: 10.1016/j.mee.2025.112319

Hanlin Wan , Qian Wang , Jian Cai , Dejun Wang

{"title":"Low temperature solid-state diffusion bonding of fine pitch Cu/Sn micro-bumps assisted with formic acid vapor for 3D integration","authors":"Hanlin Wan , Qian Wang , Jian Cai , Dejun Wang","doi":"10.1016/j.mee.2025.112319","DOIUrl":"10.1016/j.mee.2025.112319","url":null,"abstract":"<div><div>Low-temperature solid-state diffusion (SSD) bonding of 5 μm diameter Cu/Sn micro-bumps was achieved with the assistance of formic acid vapor. Efforts were made to overcome surface oxidation of copper and uneven tin morphology, which are two major challenges in SSD bonding. Formic acid vapor was used as pre-treatment gas before bonding and protection gas during bonding. The results demonstrated that formic acid vapor is highly effective in removing surface oxidation on copper and preventing secondary oxidation, thereby facilitating a strong bond. Temperatures of 160 °C and 200 °C in 120 s were identified as ideal for pre-treatment. In SSD thermal compression bonding, 30 MPa TCB pressure was found to be necessary to overcome the uneven tin morphology. Other bonding parameters were also optimized, achieving a die shear strength of up to 59 MPa while reducing bonding temperature and time to 150 °C and 10 min. As bump scale shrinks, the interface analysis revealed a unique “teeth-like” structure in the bonding interface, contributing to improved shear strength due to intermetallic compound (IMC) growth and a favorable stress distribution. The assistance of formic acid vapor and the optimization of bonding parameters enhances the likelihood of future applications of solid-state bonding in industry, which could be an alternative choice for fine-pitch micro-bump bonding application.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"298 ","pages":"Article 112319"},"PeriodicalIF":2.6,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Fabrication of industrial grade GMR multilayer magnetic sensors for non-recording applications 用于非记录应用的工业级GMR多层磁传感器的制造

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-01-11 DOI: 10.1016/j.mee.2024.112311

Bhagaban Behera, Umesh P. Borole, Jakeer Khan, Harish C. Barshilia, P. Chowdhury

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Ultrasharp periodic AlN nanotips formed via purely subtractive nanofabrication 通过纯减法纳米加工形成的超尖锐周期性AlN纳米尖

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2025-01-11 DOI: 10.1016/j.mee.2025.112312

Robert Fraser Armstrong , Philip Aldam Shields

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Application of atomic force microscopy technology in doping characterization of semiconductor materials and devices 原子力显微镜技术在半导体材料和器件掺杂表征中的应用

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-30 DOI: 10.1016/j.mee.2024.112310

Xiaomeng Liu, Xiangsheng Wang, Xinyou Liu, Yanpeng Song, Yiwen Zhang, Hailing Wang, Ying Zhang, Guilei Wang, Chao Zhao

{"title":"Application of atomic force microscopy technology in doping characterization of semiconductor materials and devices","authors":"Xiaomeng Liu, Xiangsheng Wang, Xinyou Liu, Yanpeng Song, Yiwen Zhang, Hailing Wang, Ying Zhang, Guilei Wang, Chao Zhao","doi":"10.1016/j.mee.2024.112310","DOIUrl":"10.1016/j.mee.2024.112310","url":null,"abstract":"<div><div>The precise characterization of the doping profile is crucial for optimizing the performance and structural integrity of semiconductor devices. As the size of semiconductor devices continues to diminish, the need of precise characterization of doping profiles has become increasingly urgent. Atomic Force Microscopy (AFM) has become a promising technique for doping profile characterization within the semiconductor field, owing to its high spatial resolution, multidimensional feature analysis, and flexibility in various working environments. Based on AFM technology, various techniques have been developed for doping characterization, such as scanning capacitance microscope (SCM), scanning spreading resistance microscope (SSRM) and scanning microwave impedance microscope (sMIM). In this work, we systematically review the application of these three techniques for doping characterization and summarize their strengths and limitations. Furthermore, we also evaluate their capability in characterizing the doping profiles of miniature devices with three-dimensional (3D) architectures. This work offers feasible approaches for advanced semiconductor device manufacturing.</div><div>© 2012 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Global Science and Technology Forum Pte Ltd.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112310"},"PeriodicalIF":2.6,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A simulation study of grayscale ice lithography for spiral phase plates in near infrared wavelengths 近红外波段螺旋相板灰度冰光刻的仿真研究

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-26 DOI: 10.1016/j.mee.2024.112308

Kangping Liu , Jinyu Guo , Shuoqiu Tian , Wentao Yuan , Ding Zhao , Rui Zheng , Yifang Chen , Min Qiu

{"title":"A simulation study of grayscale ice lithography for spiral phase plates in near infrared wavelengths","authors":"Kangping Liu , Jinyu Guo , Shuoqiu Tian , Wentao Yuan , Ding Zhao , Rui Zheng , Yifang Chen , Min Qiu","doi":"10.1016/j.mee.2024.112308","DOIUrl":"10.1016/j.mee.2024.112308","url":null,"abstract":"<div><div>Grayscale electron beam lithography (EBL) in amorphous solid water (ASW), known as ice lithography (IL), and in Polymethylmethacrylate (PMMA), respectively, for spiral phase plates (SPPs) are numerically simulated by using commercial software: Beamer, Tracer and Lab, aiming at characterizing the two lithography methods for three-dimensional nanostructures. It is found that IL is able to generate 3D SPP profiles with smoother surface than conventional EBL. Further simulation using finite difference time domain (FDTD) method is also conducted to investigate the effect of the surface roughness on the wavefront characteristics of the transformed vortex beams. Clear influence on the light regulation ability by surface roughness is found through comparison between ASW-based and PMMA-based SPPs, indicating that IL has better performance than conventional EBL in patterning 3D SPP structures. This research indicates that IL should be prospective for manufacturing high-quality micro and nanostructures with 3D profiles for modern optical devices.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112308"},"PeriodicalIF":2.6,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiple Aztec steps as an angle resolved micro-spectrometer by grayscale ice lithography 多重阿兹特克步骤作为一个角度分辨微光谱仪的灰度冰光刻

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-25 DOI: 10.1016/j.mee.2024.112309

Jinyu Guo , Kangping Liu , Shuoqiu Tian , Wentao Yuan , Hao Quan , Qiucheng Chen , Qingxin Wu , Rui Zheng , Ding Zhao , Yifang Chen , Min Qiu

{"title":"Multiple Aztec steps as an angle resolved micro-spectrometer by grayscale ice lithography","authors":"Jinyu Guo , Kangping Liu , Shuoqiu Tian , Wentao Yuan , Hao Quan , Qiucheng Chen , Qingxin Wu , Rui Zheng , Ding Zhao , Yifang Chen , Min Qiu","doi":"10.1016/j.mee.2024.112309","DOIUrl":"10.1016/j.mee.2024.112309","url":null,"abstract":"<div><div>For decades, Aztec steps have been widely attained because of the potential application as an angle-resolved micro-spectroscope. However, the challenge in replicating multiple steps with less than 1 nm precision hinders the Aztec steps to be commercialized. Although grayscale electron beam lithography (G-EBL) on PMMA (polymethyl methacrylate) has been tried but the surface roughness as well as the flatness still remains a big issue. This work evaluates the grayscale e-beam lithography in amorphous solid water (ASW), nicknamed as ice lithography, for Aztec steps by numerical simulation based on Monte Carlo algorithm. For comparison, grayscale electron beam lithography in PMMA was included in the simulation. Furthermore, simulation using finite difference and time domain (FDTD) method was also carried out to theoretically characterize the angle-resolved spectra by the numerically modeled Aztec steps in ASW and PMMA, respectively. Our results show that grayscale ice lithography on ASW is able to replicate Aztec steps with much smother surface and better flatness than that on PMMA, giving rise to significantly improved spectral resolution.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112309"},"PeriodicalIF":2.6,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance copper-seed-layer deposition using 60-MHz high-frequency–direct current superimposed magnetron sputtering 采用60 mhz高频直流叠加磁控溅射技术制备高性能铜种子层

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-20 DOI: 10.1016/j.mee.2024.112307

Byeong Hwa Jeong , Dong Woo Kim , Da Hee Park , Shin Kim , Yong Seok Jang , Yasuyuki Taura , Yutaka Kokaze , Sang Ho Lee , Geun Young Yeom

{"title":"High-performance copper-seed-layer deposition using 60-MHz high-frequency–direct current superimposed magnetron sputtering","authors":"Byeong Hwa Jeong , Dong Woo Kim , Da Hee Park , Shin Kim , Yong Seok Jang , Yasuyuki Taura , Yutaka Kokaze , Sang Ho Lee , Geun Young Yeom","doi":"10.1016/j.mee.2024.112307","DOIUrl":"10.1016/j.mee.2024.112307","url":null,"abstract":"<div><div>This study aims to demonstrate the deposition of high-performance Cu-seed layers using a very high frequency–direct current (VHF–DC) superimposed magnetron sputtering system for sub-20-nm dual-damascene interconnects. Plasma diagnostics revealed substantial improvements in plasma properties with electron densities measured at <em>n</em><sub><em>e</em></sub> ≈ 1.71 × 10<sup>16</sup> m<sup>−3</sup> for 40.68 MHz VHF–DC, and <em>n</em><sub><em>e</em></sub> ≈ 1.63 × 10<sup>17</sup> <!-->m<sup>−3</sup> for 60 MHz VHF–DC. These enhancements enabled superior step coverage and thin-film uniformity, particularly in high-aspect-ratio structures, achieving a bottom-to-top coverage ratio exceeding 100 % at an RF bias of 200 W. Comparative analysis using X-ray diffraction and X-ray photoelectron spectroscopy showed that Cu<img>Mn films deposited via VHF–DC superimposed sputtering exhibited improved Cu (111) crystallinity, reduced void formation, and enhanced adhesion compared to conventional DCMS. These findings reveal VHF–DC superimposed sputtering as a critical technological advancement, offering enhanced process reliability and scalability for next-generation semiconductor devices.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112307"},"PeriodicalIF":2.6,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Etching of tungsten via a combination of thermal oxide formation and wet-chemical oxide dissolution 通过热氧化物形成和湿化学氧化物溶解相结合的方法对钨进行蚀刻

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-18 DOI: 10.1016/j.mee.2024.112304

Antoine Pacco , Teppei Nakano , Jana Loyo Prado , Ju-Geng Lai , Hikaru Kawarazaki , Efrain Altamirano Sanchez

{"title":"Etching of tungsten via a combination of thermal oxide formation and wet-chemical oxide dissolution","authors":"Antoine Pacco , Teppei Nakano , Jana Loyo Prado , Ju-Geng Lai , Hikaru Kawarazaki , Efrain Altamirano Sanchez","doi":"10.1016/j.mee.2024.112304","DOIUrl":"10.1016/j.mee.2024.112304","url":null,"abstract":"<div><div>In this work, an etching process for the controlled and partial recess of tungsten metal was developed. The process comprises two steps which can be repeated: a thermal oxidation of the tungsten followed by the oxide dissolution in an acidic or basic solution. During the first step the W metal is heated in the presence of O<sub>3</sub> gas in the temperature range of 210–290 °C forming a WO<sub>3</sub> oxide. During the second step this thermally grown oxide is then selectively dissolved towards the underlying W metal. Both NH<sub>4</sub>OH and H<sub>3</sub>PO<sub>4</sub> were down selected as the best wet chemical dissolution agents in terms of dissolution rate and selectivity. By utilizing this combined thermal/wet-chemical cyclic etch process, the total W recess can be tuned on the nanoscale based on oxidation temperature and total number of cycles. This process was then applied for the deep recess (∼180 nm) of narrow (∼20 nm) tungsten trenches for the fabrication of the bottom contacts in complementary field-effect transistors (CFET).</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112304"},"PeriodicalIF":2.6,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaN radiofrequency components and power amplifiers for next-generation 5G communications 用于下一代5G通信的GaN射频组件和功率放大器

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-12-16 DOI: 10.1016/j.mee.2024.112305

Muhammad Bilal Yaseen , Fayu Wan , Fareeha Siddique , Atul Thakur

{"title":"GaN radiofrequency components and power amplifiers for next-generation 5G communications","authors":"Muhammad Bilal Yaseen , Fayu Wan , Fareeha Siddique , Atul Thakur","doi":"10.1016/j.mee.2024.112305","DOIUrl":"10.1016/j.mee.2024.112305","url":null,"abstract":"<div><div>This review article provides a thorough analysis of recent progress in Gallium Nitride radio frequency components and power amplifiers, highlighting their essential contributions to the advancement of fifth-generation communication systems. Over the last two decades, Gallium Nitride High Electron Mobility Transistors have been at the cutting edge of technological development, demonstrating significant advancements and their crucial role in silicon substrate applications for radio frequency power. These advancements underscore the transformative impact and continued importance of Gallium Nitride technologies in enhancing performance and efficiency in modern communication systems. This review evaluates various material structures, device architectures, and fabrication techniques, detailing their impact on enhancing power density and efficiency within 5G systems. Key findings include effective methodologies for mitigating RF leakage from substrates and interfaces, which are vital for sustaining high power density and efficiency. Noteworthy progress in the L-band demonstrates significant improvements in output power and power-added efficiency, highlighting GaN technology's transformative potential in wireless communications. This review integrates critical insights into the current state of GaN RF technology and provides a forward-looking perspective on the challenges and future directions necessary to fully exploit GaN's capabilities for 5G network applications.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"297 ","pages":"Article 112305"},"PeriodicalIF":2.6,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0