Microelectronic Engineering最新文献_第3页

Etch characteristics of cobalt thin films using high density plasma of CH3COCH3/Ar gas mixture 使用 CH3COCH3/Ar 混合气体的高密度等离子体蚀刻钴薄膜的特性

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-08-18 DOI: 10.1016/j.mee.2024.112260

Geum Bin Baek, Kyung Ho Oh, Chee Won Chung

引用次数: 0

Realization of all-optical logic gates using MIM waveguides and a rectangular ring resonator 利用 MIM 波导和矩形环谐振器实现全光学逻辑门

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-08-17 DOI: 10.1016/j.mee.2024.112259

Semih Korkmaz

{"title":"Realization of all-optical logic gates using MIM waveguides and a rectangular ring resonator","authors":"Semih Korkmaz","doi":"10.1016/j.mee.2024.112259","DOIUrl":"10.1016/j.mee.2024.112259","url":null,"abstract":"<div>In this study, all-optical OR, exclusive OR (XOR), NOR, XNOR, AND, NAND, and NOT logic gates using metal-insulator-metal (MIM) waveguides with a rectangular ring resonator are designed and analyzed. The structure has a silver plate with three input waveguides, one output waveguide, and a rectangular ring resonator. One of the input ports is used as a control port. The finite-difference time-domain (FDTD) method is utilized to obtain the optical spectrum of the proposed structures. To realize all-optical logic gate properties of the designed structures, optical signals with the same phase or different phases are passed through the waveguides. Transmission spectrum (T), contrast ratio (CR), and modulation depth (MD) parameters are obtained to determine the performances of all-optical logic gates. To determine the logic 1 (ON) and logic 0 (OFF) states of the output ports, the threshold transmission value is accepted as 0.23 for all-optical logic gates. For the proposed designs, the highest transmission, contrast ratio, and modulation depth values are 217%, 6.75 dB, and 100%, respectively. The structure also supports a data rate of 24 Tb/s. The designed optical logic gates have valuable features for developing high-performance optical devices.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"294 ","pages":"Article 112259"},"PeriodicalIF":2.6,"publicationDate":"2024-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spectroscopic investigation of oxidation in GaSe 2D layered materials GaSe 二维层状材料中的氧化光谱研究

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-08-11 DOI: 10.1016/j.mee.2024.112256

Badreddine Smiri , Rémy Bernardin , Mickael Martin , Hervé Roussel , Jean Luc Deschanvres , Emmanuel Nolot , Névine Rochat , Franck Bassani , Thierry Baron , Bernard Pelissier

{"title":"Spectroscopic investigation of oxidation in GaSe 2D layered materials","authors":"Badreddine Smiri , Rémy Bernardin , Mickael Martin , Hervé Roussel , Jean Luc Deschanvres , Emmanuel Nolot , Névine Rochat , Franck Bassani , Thierry Baron , Bernard Pelissier","doi":"10.1016/j.mee.2024.112256","DOIUrl":"10.1016/j.mee.2024.112256","url":null,"abstract":"<div>GaSe, a two-dimensional layered metal monochalcogenide, has recently attracted growing interest due to its unique electronic properties and potential technological applications. In this study, we investigate the oxidation mechanisms and properties of GaSe exposed to air for different durations, with the intensive use of Raman spectroscopy, combined with atomic force microscopy (AFM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). Raman analysis reveals the oxidation of GaSe, resulting in the formation of a thin layer comprising Ga2Se3, Ga2O3, and amorphous selenium. Utilizing these signatures, oxidation is then tracked. Raman spectroscopy reveals that GaSe layer becomes oxidized almost immediately after exposure to air. However, the oxidation is a self-limiting process, taking roughly 15 min to construct an 8 Å thick layer of Ga₂O₃. XPS analysis shows a good agreement with Raman analysis. The polarized Raman study suggests that the Ga₂Se₃ and Ga₂O₃ layers tend to reach an oriented structural state over time. In ambient conditions, the intensity of all Raman modes and the luminescence decreases, linked to reduction in GaSe thickness. By using various Raman excitation wavelengths, we highlight the depth-dependent oxidation dynamics in this 2D layered GaSe material.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"294 ","pages":"Article 112256"},"PeriodicalIF":2.6,"publicationDate":"2024-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141998500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Extreme silicon thinning for back side power delivery network: Si thinning stopping on scaled SiGe etch stop layer 用于背面输电网络的极端硅减薄：在按比例硅锗蚀刻停止层上停止硅减薄

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-24 DOI: 10.1016/j.mee.2024.112246

Farid Sebaai , Roger Loo , Anne Jourdain , Eric Beyne , Hikaru Kawarazaki , Teppei Nakano , Efrain Altamirano Sanchez

{"title":"Extreme silicon thinning for back side power delivery network: Si thinning stopping on scaled SiGe etch stop layer","authors":"Farid Sebaai , Roger Loo , Anne Jourdain , Eric Beyne , Hikaru Kawarazaki , Teppei Nakano , Efrain Altamirano Sanchez","doi":"10.1016/j.mee.2024.112246","DOIUrl":"10.1016/j.mee.2024.112246","url":null,"abstract":"<div>This paper discusses the challenges relative to the silicon thinning which allows the back side power delivery integration (BSPDN). The back side silicon thinning stopping on a thin Si0.75Ge0.25 etch stop layer (ESL) has been investigated as it represents an alternative to the use of SOI wafers. Etch stop layers using 10 nm Si0.75Ge0.25 or 10 nm Si0.75Ge0.25 boron doped (Si0.75Ge0.25:B) have been studied for which different thinning process sequences were considered. All the considered thinning sequences are terminated with a diluted ammonia (NH4OH) process which provides the selectivity towards the ESL. Considering a 10 nm Si0.75Ge0.25:B as an ESL considerably increases the selectivity of the last diluted NH4OH silicon etching step. It nevertheless induces a risk of device poisoning caused by the diffusion of boron. Considering a 10 nm Si0.75Ge0.25 as an ESL has been then demonstrated using different thinning process sequences. Those alternative thinning sequences were optimized with respect to the silicon removal within wafer uniformity.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"294 ","pages":"Article 112246"},"PeriodicalIF":2.6,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141785021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel evaluation method of the aging performance of MEMS flow sensor MEMS 流量传感器老化性能的新型评估方法

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-22 DOI: 10.1016/j.mee.2024.112231

Qiaoqiao Kang , Wei Tian , Yuzhe Lin , Jifang Tao

{"title":"A novel evaluation method of the aging performance of MEMS flow sensor","authors":"Qiaoqiao Kang , Wei Tian , Yuzhe Lin , Jifang Tao","doi":"10.1016/j.mee.2024.112231","DOIUrl":"10.1016/j.mee.2024.112231","url":null,"abstract":"<div>The development of Micro Electro Mechanical Systems (MEMS) flow sensor towards high level market applications generates various challenges, in particular also on the reliable functionality. With the advancement of reliability engineering technology, aging phenomenon of MEMS devices has been widely concerned. As a result, an aging evaluation method is essential. The accelerated aging testing (AAT) is the most widely used in traditional aging methods. However, its performance is limited by highly economic and time cost. In this paper, a novel aging effect model is proposed, in which a comprehensive approach that integrates AAT, lifetime distribution modeling, and either Finite Element Modeling Simulation (FEMS) or fatigue simulation (FS) as fundamental is explored. However, the difference from the conventional approach was that the AAT results is imported in FS, to confirm fatigue analysis, while FS predictions are instrumental in analyzing degradation or fatigue phenomena and estimation lifetime. In this way, aging performance is illustrated detailed with the lower aging cost and high efficiency. Meanwhile, the results of proposed FS are verified by a thermal cycle (TC) AAT. Specifically, the resistor degradation mechanism, the characteristic parameter degradation is calculated. Moreover, the lifetime evaluation was acquired by the Arrhenius model. Finally, the proposed aging performance evaluation method can be applied to both discrete devices and modules. Compared with the traditional aging method the high aging cost can be eliminated, and the proposed aging evaluation strategy can be used in various temperature conditions.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"293 ","pages":"Article 112231"},"PeriodicalIF":2.6,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141736744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process RRAM 的开关和周期变化对 4 位加密/解密过程的影响

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-17 DOI: 10.1016/j.mee.2024.112244

T. Nivetha , B. Bindu , Kamsani Noor Ain

引用次数: 0

Mask defect detection by combining wiener deconvolution and illumination optimization 结合维纳解卷积和照明优化进行掩膜缺陷检测

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-15 DOI: 10.1016/j.mee.2024.112245

Kunyang Li , Shuying Deng , Aiqin Zhang , Jinjiang Fu , Junyao Luo , Xuehao Chen , Jianying Zhou , Zhou Zhou

{"title":"Mask defect detection by combining wiener deconvolution and illumination optimization","authors":"Kunyang Li , Shuying Deng , Aiqin Zhang , Jinjiang Fu , Junyao Luo , Xuehao Chen , Jianying Zhou , Zhou Zhou","doi":"10.1016/j.mee.2024.112245","DOIUrl":"10.1016/j.mee.2024.112245","url":null,"abstract":"<div>In the lithography process, mask defect is inevitably replicated on chips hence the yield and quality of the product are directly related to the mask quality. Mask microscopy resolution is then an essential specification. In this work, a high-efficiency method for enhancing the resolution of mask defect is proposed based on illumination optimization and Wiener deconvolution. To validate this approach, we established a verification apparatus designed to achieve a theoretical resolution of 3.0 μm with visible light. Remarkably, the empirical results demonstrated that the actual resolution attained is as low as 2.5 μm. The verification demonstrates a significant improvement for various periodic fringes. Moreover, the augmented capability of the apparatus facilitates the identification of mask defects. Although the experiment is carried out for the visible wavelength, the research is specifically designed for the working conditions suitable for EUV mask detection based on the preparatory work for the EUV.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"293 ","pages":"Article 112245"},"PeriodicalIF":2.6,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S016793172400114X/pdfft?md5=67621d3a1e265d22316b27b27cff04b9&pid=1-s2.0-S016793172400114X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141638271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All-2D materials-based 1T1M cells with threshold switching for electronic neurons 基于全二维材料的 1T1M 细胞，具有电子神经元的阈值开关功能

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-15 DOI: 10.1016/j.mee.2024.112247

Bin Yuan , Kaichen Zhu , Tingting Han , Sebastian Pazos , Mario Lanza

引用次数: 0

Memristor-based input delay reservoir computing system for temporal signal prediction 基于 Memristor 的输入延迟蓄水池计算系统，用于时间信号预测

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-13 DOI: 10.1016/j.mee.2024.112240

Zhen-Ni Lu , Jing-Ting Ye , Zhong-Da Zhang , Jia-Wei Cai , Xiang-Yu Pan , Jian-Long Xu , Xu Gao , Ya-Nan Zhong , Sui-Dong Wang

引用次数: 0

Subthreshold read operations in 3D PCM: 1S1R device modeling and memory array analysis 3D PCM 中的阈下读取操作：1S1R 器件建模和存储器阵列分析

IF 2.6 4区工程技术

Microelectronic Engineering Pub Date : 2024-07-13 DOI: 10.1016/j.mee.2024.112211

Qiuyao Yu , Guangming Zhang , Yu Lei , Xinyu Yang , Houpeng Chen , Qian Wang , Zhitang Song

{"title":"Subthreshold read operations in 3D PCM: 1S1R device modeling and memory array analysis","authors":"Qiuyao Yu , Guangming Zhang , Yu Lei , Xinyu Yang , Houpeng Chen , Qian Wang , Zhitang Song","doi":"10.1016/j.mee.2024.112211","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112211","url":null,"abstract":"<div>3-D phase change memory (PCM) is one of the most promising next-generation nonvolatile memory, and the subthreshold sensing strategy can effectively improve its limited endurance. In this study, we propose a one-selector-one-resistor (1S1R) model with Monte Carlo (MC) function and provide array configurations for the worst case and the maximum bit line voltage (VBL-max), respectively. Based on these, the read window margin (RWM) is evaluated with various array sizes, OTS threshold voltage variations (<math><msub><mi>σ</mi><mi>var</mi></msub></math>), and bias voltages (VBias). Our results reveal that the RWM increases as the VBL approaches the VBL-max. Larger arrays lead to an increased leakage current difference, while larger <math><msub><mi>σ</mi><mi>var</mi></msub></math> values result in decreased cell current difference and VBL-max. The decrease in VBL-max further deteriorates the RWM. Additionally, we analyze the optimal VBias for 2-deck arrays achieves a 7% reduction in leakage energy consumption and a 22.6% increase in RWM compared to the V/2 bias. The optimal VBias depends on OTS devices and array sizes.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"292 ","pages":"Article 112211"},"PeriodicalIF":2.6,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141607081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0