结合拉曼光谱和椭偏光谱的混合计量学研究应用于GeSbTe结晶测量和深度学习方法的准确预测

IF 3.1 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jon de Vecchy , Jean-Hervé Tortai , Maxime Besacier , Delphine Le Cunff , Bernard Pelissier
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引用次数: 0

摘要

为了监测富锗GeSbTe的结晶过程,利用神经网络的机器学习方法将椭圆偏振和拉曼光谱相关联。选择椭圆偏振法是一种快速、无损、在线的测量技术,选择拉曼光谱法是由于其具有监测结晶的潜力。在25-410°C范围内获得了实验椭偏/拉曼光谱数据集。假设结晶过程是锗驱动的,通过拟合拉曼锗相关模式提取结晶度。利用原始椭偏光谱(输入)进行神经网络杂交预测结晶率(输出)。用这些实验数据训练的模型表现出较差的性能,特别是在390-410°C结晶范围内。缺乏数据被认为是主要问题。为了生成数据,实验数据采用数值温度定律独立建模。然后生成椭偏光谱,并标记在任何给定温度下的结晶度。然后将合成数据集用作训练数据集,从而更好地预测结晶值,将模型的均方误差除以十倍以上。最后,在实验测试集上将合成数据训练模型与实验数据训练模型进行了比较。合成数据训练模型在结晶范围内表现出比实验数据训练模型更好的性能(均方预测误差低约2倍)。因此,本研究的概念证明得到了验证,并且可以在仅使用光学实验原始测量的相变材料的快速结晶速率预测中产生有希望的潜在结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction

Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction
To monitor the Ge-rich GeSbTe crystallization process, ellipsometry and Raman spectroscopy were correlated by Machine Learning using a Neural Network approach. Ellipsometry was selected for being a fast, non-destructive, and in-line metrology technique and Raman spectroscopy was selected for its crystallization monitoring potential.
An experimental ellipsometry/Raman spectroscopy dataset was acquired in a 25–410 °C range. Assuming that the crystallization process is germanium-driven, the crystallinity rate was extracted from fitting the Raman germanium-related modes. Neural Network hybridization was performed to predict the crystallinity rate (output) from the raw ellipsometry spectra (input).
Models trained with these experimental data show poor performance, especially in the 390–410 °C crystallization range. The lack of data was identified to be the main issue. To generate data, the experimental data were independently modeled using numeric temperature laws. Ellipsometry spectra were then generated and labeled with crystallinity rates at any given temperature. The synthetic datasets were then used as a training dataset, leading to a better prediction of the crystallization value, dividing the models' mean squared error by more than ten times.
Finally, the synthetic data-trained models were compared to the experimental data-trained models on an experimental test set. Synthetic data-trained models showed better performance in the crystallization range than the experimental data-trained models (∼2 times lower mean squared prediction errors). The proof of concept of this study is thus validated and could lead to promising potential results in fast crystallization rate prediction of phase change material simply using optical experimental raw measurements.
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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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