Jon de Vecchy , Jean-Hervé Tortai , Maxime Besacier , Delphine Le Cunff , Bernard Pelissier
{"title":"结合拉曼光谱和椭偏光谱的混合计量学研究应用于GeSbTe结晶测量和深度学习方法的准确预测","authors":"Jon de Vecchy , Jean-Hervé Tortai , Maxime Besacier , Delphine Le Cunff , Bernard Pelissier","doi":"10.1016/j.mee.2025.112345","DOIUrl":null,"url":null,"abstract":"<div><div>To monitor the Ge-rich GeSbTe crystallization process, ellipsometry and Raman spectroscopy were correlated by Machine Learning using a Neural Network approach. Ellipsometry was selected for being a fast, non-destructive, and in-line metrology technique and Raman spectroscopy was selected for its crystallization monitoring potential.</div><div>An experimental ellipsometry/Raman spectroscopy dataset was acquired in a 25–410 °C range. Assuming that the crystallization process is germanium-driven, the crystallinity rate was extracted from fitting the Raman germanium-related modes. Neural Network hybridization was performed to predict the crystallinity rate (output) from the raw ellipsometry spectra (input).</div><div>Models trained with these experimental data show poor performance, especially in the 390–410 °C crystallization range. The lack of data was identified to be the main issue. To generate data, the experimental data were independently modeled using numeric temperature laws. Ellipsometry spectra were then generated and labeled with crystallinity rates at any given temperature. The synthetic datasets were then used as a training dataset, leading to a better prediction of the crystallization value, dividing the models' mean squared error by more than ten times.</div><div>Finally, the synthetic data-trained models were compared to the experimental data-trained models on an experimental test set. Synthetic data-trained models showed better performance in the crystallization range than the experimental data-trained models (∼2 times lower mean squared prediction errors). The proof of concept of this study is thus validated and could lead to promising potential results in fast crystallization rate prediction of phase change material simply using optical experimental raw measurements.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"300 ","pages":"Article 112345"},"PeriodicalIF":3.1000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction\",\"authors\":\"Jon de Vecchy , Jean-Hervé Tortai , Maxime Besacier , Delphine Le Cunff , Bernard Pelissier\",\"doi\":\"10.1016/j.mee.2025.112345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>To monitor the Ge-rich GeSbTe crystallization process, ellipsometry and Raman spectroscopy were correlated by Machine Learning using a Neural Network approach. Ellipsometry was selected for being a fast, non-destructive, and in-line metrology technique and Raman spectroscopy was selected for its crystallization monitoring potential.</div><div>An experimental ellipsometry/Raman spectroscopy dataset was acquired in a 25–410 °C range. Assuming that the crystallization process is germanium-driven, the crystallinity rate was extracted from fitting the Raman germanium-related modes. Neural Network hybridization was performed to predict the crystallinity rate (output) from the raw ellipsometry spectra (input).</div><div>Models trained with these experimental data show poor performance, especially in the 390–410 °C crystallization range. The lack of data was identified to be the main issue. To generate data, the experimental data were independently modeled using numeric temperature laws. Ellipsometry spectra were then generated and labeled with crystallinity rates at any given temperature. The synthetic datasets were then used as a training dataset, leading to a better prediction of the crystallization value, dividing the models' mean squared error by more than ten times.</div><div>Finally, the synthetic data-trained models were compared to the experimental data-trained models on an experimental test set. Synthetic data-trained models showed better performance in the crystallization range than the experimental data-trained models (∼2 times lower mean squared prediction errors). The proof of concept of this study is thus validated and could lead to promising potential results in fast crystallization rate prediction of phase change material simply using optical experimental raw measurements.</div></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":\"300 \",\"pages\":\"Article 112345\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931725000346\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000346","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction
To monitor the Ge-rich GeSbTe crystallization process, ellipsometry and Raman spectroscopy were correlated by Machine Learning using a Neural Network approach. Ellipsometry was selected for being a fast, non-destructive, and in-line metrology technique and Raman spectroscopy was selected for its crystallization monitoring potential.
An experimental ellipsometry/Raman spectroscopy dataset was acquired in a 25–410 °C range. Assuming that the crystallization process is germanium-driven, the crystallinity rate was extracted from fitting the Raman germanium-related modes. Neural Network hybridization was performed to predict the crystallinity rate (output) from the raw ellipsometry spectra (input).
Models trained with these experimental data show poor performance, especially in the 390–410 °C crystallization range. The lack of data was identified to be the main issue. To generate data, the experimental data were independently modeled using numeric temperature laws. Ellipsometry spectra were then generated and labeled with crystallinity rates at any given temperature. The synthetic datasets were then used as a training dataset, leading to a better prediction of the crystallization value, dividing the models' mean squared error by more than ten times.
Finally, the synthetic data-trained models were compared to the experimental data-trained models on an experimental test set. Synthetic data-trained models showed better performance in the crystallization range than the experimental data-trained models (∼2 times lower mean squared prediction errors). The proof of concept of this study is thus validated and could lead to promising potential results in fast crystallization rate prediction of phase change material simply using optical experimental raw measurements.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.