{"title":"The electronic and optical properties of the monolayer Mo(SxSe1-x)2 by the first-principle calculations","authors":"Chuan-Zhen Zhao, Tai-Ning Xu, Hui-Jing Hu","doi":"10.1016/j.mee.2025.112349","DOIUrl":null,"url":null,"abstract":"<div><div>First-principles calculations are conducted to explore the electronic and optical properties of the monolayer Mo(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub>. It is found that the monolayer Mo(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub> possesses a direct bandgap. Through fitting the theoretical and experimental data, the bandgap bowing parameter of 0.051 eV is attained. The enlargement of the bandgap energy is by reason of the decline of the K VBM. In the full component range, the downward movements of the K CBM and the K VBM are dominated by the <span><math><msub><mi>p</mi><mrow><mi>S</mi><mo>−</mo><mn>3</mn><mi>p</mi></mrow></msub><mo>−</mo><msub><mi>d</mi><mrow><mi>Mo</mi><mo>−</mo><mn>4</mn><mi>d</mi></mrow></msub></math></span> coupling interaction and the total p-d coupling interaction, respectively. For the optical properties, it is found that increasing S component can reduce the static dielectric constant. However, the B and C excitons as well as E<sub>3</sub> shift toward the higher energy direction with increasing S component. It is also found that increasing S component has a small effect on enhancing the light absorption. The photoconductivity shows a similar result with the absorptivity.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112349"},"PeriodicalIF":2.6000,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000383","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
First-principles calculations are conducted to explore the electronic and optical properties of the monolayer Mo(SxSe1-x)2. It is found that the monolayer Mo(SxSe1-x)2 possesses a direct bandgap. Through fitting the theoretical and experimental data, the bandgap bowing parameter of 0.051 eV is attained. The enlargement of the bandgap energy is by reason of the decline of the K VBM. In the full component range, the downward movements of the K CBM and the K VBM are dominated by the coupling interaction and the total p-d coupling interaction, respectively. For the optical properties, it is found that increasing S component can reduce the static dielectric constant. However, the B and C excitons as well as E3 shift toward the higher energy direction with increasing S component. It is also found that increasing S component has a small effect on enhancing the light absorption. The photoconductivity shows a similar result with the absorptivity.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.