Enhancing ferroelectric resistive switching via polar order engineering in Sm-doped BiFeO3 films

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2025-03-13 DOI:10.1016/j.mee.2025.112343

Biaohong Huang , Yuxuan Jiang , Jingyan Liu , Yizhuo Li , Qianhe Jin , Qishuai Huang , Tula R. Paudel , Tom Wu , Zhidong Zhang , Weijin Hu

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引用次数: 0

Abstract

Ferroelectric materials are promising for nonvolatile resistive memories due to their unique switchable diode effect. To improve the resistive switching performance, the fundamental correlation between the diode effect and the polar ordering should be unraveled. Here by the A-site substitution with Sm, we report the resistive switching in ferroelectric SrRuO₃/Sm_xBi_1-xFeO₃ (x = 0, 0.1, 0.2)/Pt thin-film capacitors. We find that the ground state of BiFeO₃ changes from ferroelectric to antiferroelectric with increasing Sm substitution, which is accompanied by the fading of the resistive switching in Sm_0.2Bi_0.8FeO₃, illustrating the decisive role of polarization in resistive switching. Moreover, similar dynamics between polarization and resistance states supports the close link between the ferroelectric domain growth and the resistive switching. Our SrRuO₃/Sm_0.1Bi_0.9FeO₃/Pt device achieved a high on/off ratio of 10⁴ and fast switching speed of 6.25 ns, thanks to reduced leakage current from Sm doping while preserving ferroelectric properties. Our results thus provide a new approach to enhance the resistive memory performance of ferroelectric materials.

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.